KR940010869A - 질화알루미늄회로기판 및 그 제조방법 - Google Patents
질화알루미늄회로기판 및 그 제조방법 Download PDFInfo
- Publication number
- KR940010869A KR940010869A KR1019930014823A KR930014823A KR940010869A KR 940010869 A KR940010869 A KR 940010869A KR 1019930014823 A KR1019930014823 A KR 1019930014823A KR 930014823 A KR930014823 A KR 930014823A KR 940010869 A KR940010869 A KR 940010869A
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum nitride
- green sheet
- circuit board
- titanium
- copper
- Prior art date
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 239000004020 conductor Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract 6
- 239000002184 metal Substances 0.000 claims abstract 6
- 230000000737 periodic effect Effects 0.000 claims abstract 3
- 238000010304 firing Methods 0.000 claims abstract 2
- 150000002736 metal compounds Chemical class 0.000 claims abstract 2
- 238000005498 polishing Methods 0.000 claims abstract 2
- 230000001681 protective effect Effects 0.000 claims abstract 2
- 238000005245 sintering Methods 0.000 claims abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 claims 1
- 241000238631 Hexapoda Species 0.000 claims 1
- 229910033181 TiB2 Inorganic materials 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 150000003609 titanium compounds Chemical class 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Ceramic Products (AREA)
Abstract
본 발명은 질화알루미늄 세라믹과 도체부의 계면에서의 접합성을 양호하게 하고 내부도체 배선의 단선을 없게 하는 동시에 회로기판의 기계적 강도를 향상시킴을 목적으로 한다.
본 발명은 질화알루미늄의 그린쉬트에 동을 주성분으로하고 주기율표 제 IVa족의 금속 또는 금속화합물을 첨가한 동페이스트를 사용하여 평면배선, 비어등의 도체배선부를 설비하고 이 도체배선부를 설비한 그린쉬트의 외표면에 별개의 그린쉬트를 적층하여 상기 그린쉬트의 외표면에 노출되는 상기 도체배선부를 보호 그린쉬트로 덮어서 일체화하고 소정처리 및 소성조건에 의해서 소결시킨후에 소결체의 상기 외표면을 덮는 외층부를 연삭·연마하여 제거하는 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 질화알루미늄 회로기판의 일실시예의 내부도체부의 단면에 있어서의 입자구조를 나타낸 사진,
제2도는 질화알루미늄 회로기판의 다른 실시예의 내부도체부의 단면에 있어서의 입자구조를 나타낸 사진,
제3도는 질화알루미늄 회로기판의 비어의 횡단면에서의 동, 알루미늄, 티탄의 선분석결과를 나타낸 그래프.
Claims (5)
- 질화알루미늄의 소성온도보다드 융점이 낮은 금속을 배선재료로써 내부도체부를 형성한 질화알루미늄 회로기판에 있어서, 상기 내부도체부가 동을 주성분으로하고 질화알루미늄과 동과의 계면에 주기율표 제 IVa족을 주성분으로 하는 층이 형성된 것을 특징으로 하는 질화알루미늄 회로기판.
- 제1항에 있어서, 상기 질화알루미늄과 동과의 계면에 티탄을 주성분으로하는 층이 형성된 것을 특징으로 하는 질화 알루미늄 회로기판.
- 질화알루미늄의 그린쉬트에 동을 주성분으로 하고 주기율표 제IVa족의 금속 또는 금속화합물을 첨가한 동페이스트를 사용하여 평면배선, 비어등의 도체배선부를 설비하고, 상기 도체배선부를 설비한 그린쉬트의 외표면에 별개의 그린쉬트를 적층하여 상기 그린쉬트의 외표면에 노출되는 상기 도체배선부를 보호그린쉬트로 덮어서 일체화하고 소정처리 및 소정조건에 의해서 소결시킨후에 소결체의 상기 외표면을 덮는 외충부를 연삭·연마하여 제거하는 것을 특징으로 하는 질화알루미늄 회로기판의 제조방법.
- 제3항에 있어서, 상기 동페이스로써 동을 주성분으로 하고 금속티탄 또는 티탄화합물을 금속티탄환산으로 0.2중량% 이상 20중량% 이하의 이율로 함유하는 페이스트를 사용하는 것을 특징으로 하는 질화알루미늄 회로기판의 제조방법.
- 제4항에 있어서, 상기 티탄성분이 금속티탄, 2붕화티탄, 2산화티탄중의 1종인 것을 특징으로 하는 질화알루미늄 회로기판의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4299192A JPH06125153A (ja) | 1992-10-12 | 1992-10-12 | 窒化アルミニウム回路基板及びその製造方法 |
JP92-299192 | 1992-10-12 | ||
JP93-299192 | 1992-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940010869A true KR940010869A (ko) | 1994-05-26 |
KR0125101B1 KR0125101B1 (ko) | 1997-12-04 |
Family
ID=17869334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930014823A KR0125101B1 (ko) | 1992-10-12 | 1993-07-31 | 질화알루미늄 회로기판 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH06125153A (ko) |
KR (1) | KR0125101B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100261793B1 (ko) * | 1995-09-29 | 2000-07-15 | 니시무로 타이죠 | 고강도 고신뢰성 회로기판 및 그 제조방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3537648B2 (ja) * | 1997-10-28 | 2004-06-14 | 京セラ株式会社 | 窒化アルミニウム質配線基板及びその製造方法 |
JP3538549B2 (ja) * | 1998-08-31 | 2004-06-14 | 京セラ株式会社 | 配線基板およびその製造方法 |
US7868358B2 (en) * | 2003-06-06 | 2011-01-11 | Northrop Grumman Systems Corporation | Coiled circuit device with active circuitry and methods for making the same |
US7488994B2 (en) * | 2003-06-06 | 2009-02-10 | Northrop Grumman Corporation | Coiled circuit device and method of making the same |
JP6526888B1 (ja) * | 2018-08-01 | 2019-06-05 | Jx金属株式会社 | セラミックス層と銅粉ペースト焼結体の積層体 |
CN111556655A (zh) * | 2020-04-28 | 2020-08-18 | 重庆市澳欧硕铭科技有限公司 | 基于氮化铝板的pcb板制作方法 |
-
1992
- 1992-10-12 JP JP4299192A patent/JPH06125153A/ja active Pending
-
1993
- 1993-07-31 KR KR1019930014823A patent/KR0125101B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100261793B1 (ko) * | 1995-09-29 | 2000-07-15 | 니시무로 타이죠 | 고강도 고신뢰성 회로기판 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH06125153A (ja) | 1994-05-06 |
KR0125101B1 (ko) | 1997-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1089334B1 (en) | Ceramic circuit board | |
EP1445860A3 (en) | Piezoelectric devices mounted on integrated circuit chip | |
KR890001180A (ko) | 세라믹 패키지 | |
JP3286651B2 (ja) | セラミック多層配線基板およびその製造法並びにセラミック多層配線基板用導電材料 | |
CA2149929A1 (en) | Devices Using Metallized Magnetic Substrates | |
EP2214202A3 (en) | Metal-ceramic circuit board | |
EP0849797A3 (en) | Improvements in or relating to intergrated circuits | |
EP1255300A3 (en) | Semiconductor package | |
KR950034652A (ko) | 정전척 | |
EP0911965A3 (en) | Complex electronic component | |
KR940010869A (ko) | 질화알루미늄회로기판 및 그 제조방법 | |
KR890003076A (ko) | 전자기기 장치 | |
CA2252075A1 (en) | Sintered aluminum nitride body and metallized substrate prepared therefrom | |
KR960026410A (ko) | 집적회로 및 그의 제조방법 | |
EP2458735A3 (en) | Surface acoustic wave filter | |
JP2002252143A5 (ko) | ||
EP0999579A3 (en) | An inductor or low loss interconnect in an integrated circuit | |
EP1038853A3 (en) | Ceramic sinter and wear resistant member and electronic member using thereof | |
JPS56122156A (en) | Lead frame for semiconductor device | |
MY137542A (en) | Light-colored esd safe ceramics | |
EP1592080A3 (en) | Dielectric device | |
EP1313214A3 (en) | Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device | |
JP3518843B2 (ja) | メタライズ基板 | |
KR910021189A (ko) | 전기회로 또는 전자회로의 성형에 사용되는 세라믹기판 | |
WO2003029164A3 (de) | Piezoelektrische keramische werkstoffe auf der basis von blei-zirkonat-titanat (pzt) mit valenzkompensierten ag-haltigen komplexen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030923 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |