KR940010242A - 열처리 장치 - Google Patents

열처리 장치 Download PDF

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Publication number
KR940010242A
KR940010242A KR1019930021320A KR930021320A KR940010242A KR 940010242 A KR940010242 A KR 940010242A KR 1019930021320 A KR1019930021320 A KR 1019930021320A KR 930021320 A KR930021320 A KR 930021320A KR 940010242 A KR940010242 A KR 940010242A
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South Korea
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heat treatment
heat
treatment apparatus
transmission
container
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KR1019930021320A
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English (en)
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KR100260117B1 (ko
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가쓰신 미야기
미유키 야마하라
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이노우에 아키라
도오교오 에레구토론 가부시끼 가이샤
이노우에 다케시
도오교오 에레구토론 도오호쿠 가부시끼 가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

본 발명은, 열처리시에 필요한 단열효과를 충분히 얻을수 있음과 동시에, 열처리 용기의 시일 기능을 해치는 일이 없이 안정한 열처리를 할 수 있고, 더구나 퍼티클의 발생을 방지하여 열처리 효율을 향상시키는 것으로, 여러 개의 피처리체를 유지구에 유지한 상태에서 일단부가 뚫린 열처리용 용기내에 로드하여 이 열처리 용기를 덮개체에 의하여 밀봉하여 피처리체를 열처리를 실시하는 열처리장치에 있어서, 상기 유지구의 적어도 일단부를 유지함과 동시에, 열처리시에 상기 열처리용기내를 보온하는 보온체와, 상기 보온체에 구비된 열처리시에 열선의 투과를 방지하는 열투과 방지기판과, 이 열투과 방지기판을 지지하는 지지체를 구비하여 이룬다. 따라서, 열처리시에 필요한 단열효과를 충분히 얻을 수 있음과 동시에, 열처리용 용기의 실란 기능을 해치는 일이 없이 안정한 열처리를 할 수 있고, 더구나 퍼티클의 발생을 방지하여 열처리 효과를 향상시키는 열처리 장치를 제공할 수 있다.

Description

열처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 열처리 장치의 일실시예의 요부의 종단면도,
제2도는 제1도에 나타내는 열쳐리 장치의 보온체에 사용되는 열투과 방지 기판의 일부 파단 평면도,
제3도는 제1도에 나타내는 열투과 방지 기판의 일부 확대 단면도,
제4도는 열투과 방지 기판의 다른 실시예의 사시도.

Claims (9)

  1. 여러개의 피처리체(w)를 유지구에 유지한 상태에서 일단부가 뚫린 열처리용 용기내에 로드하여 이 열처리용기를 덮개체에 의하여 밀봉하여 피처리체에 열처리를 실시하는 열처리 장치에 있어서, 상기 유지구의 적어도 일단부를 유지함과 동시에, 열처리시에 상기 열처리 용기내를 보온하는 보온체(42)와, 상기 보온체(42)에 구비된 열처리시에 열선의 투과를 방지하는 열투과 방지기판(42A)과, 이 열투과 방지기판(42A)을 지지하는 지지체(42B)를 구비하여 이루는 열처리 장치.
  2. 제1항에 있어서, 상기 열투과 방지기판(42A)을 기포의 크기가 30~120㎛, 비중 1.9~2.1g㎤의 고순도 불투명 석영으로 구성한 열처리 장치.
  3. 제1항에 있어서, 상기 열투과 방지기판(42A)을 내부에 매우 작은 틈새가 분산한 불투명 석영으로 구성하고, 그 표면에 투명 석영층을 피복한 열처리 장치.
  4. 제1항에 있어서, 상기 지지체(42B)가 3개의 지지축으로 구성되며, 이 지지축에 가로홈을 형성하여 이 가로홈에 상기 열투과 방지기판(42A)을 헐겁게 끼워서 수평으로 유지하는 열처리 장치.
  5. 제1항에 있어서, 상기 열처리 용기내의 온도를 600~900℃로 설정하는 수단을 구비한 열처리 장치.
  6. 제1항에 있어서, 암모니아와 디클로루실란을 소스가스로서 공급하는 수단을 구비한 열처리 장치.
  7. 제1항에 있어서, 상기 열처리 용기의 밀봉면의 메탈면의 온도를 110~180℃로 유지하는 수단을 구비한 열처리 장치.
  8. 제2항에 있어서, 상기 열투과 방지기판(42A)의 표면을 굽기로 마무리한 열처리 장치.
  9. 제8항에 있어서, 상기 열투과 방지기판(42A)을 석영 또는 불투명 석영으로 구성하는 지지체와 일체로 한 열처리 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930021320A 1992-10-15 1993-10-14 열처리 장치 KR100260117B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30312892 1992-10-15
JP92-303128 1992-10-15

Publications (2)

Publication Number Publication Date
KR940010242A true KR940010242A (ko) 1994-05-24
KR100260117B1 KR100260117B1 (ko) 2000-08-01

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JP6881777B2 (ja) 2015-12-18 2021-06-02 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 合成石英ガラス粒の調製
TWI788278B (zh) 2015-12-18 2023-01-01 德商何瑞斯廓格拉斯公司 由均質石英玻璃製得之玻璃纖維及預成型品
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TWI808933B (zh) 2015-12-18 2023-07-21 德商何瑞斯廓格拉斯公司 石英玻璃體、二氧化矽顆粒、光導、施照體、及成型體及其製備方法
CN108698888A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 在石英玻璃制备中作为中间物的经碳掺杂的二氧化硅颗粒的制备
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US5540782A (en) 1996-07-30
KR100260117B1 (ko) 2000-08-01

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