KR940008018A - 실리콘에서의 오염물 제거와 소수 캐리어 수명 개선 - Google Patents

실리콘에서의 오염물 제거와 소수 캐리어 수명 개선 Download PDF

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KR940008018A
KR940008018A KR1019930019495A KR930019495A KR940008018A KR 940008018 A KR940008018 A KR 940008018A KR 1019930019495 A KR1019930019495 A KR 1019930019495A KR 930019495 A KR930019495 A KR 930019495A KR 940008018 A KR940008018 A KR 940008018A
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silicon
minority carrier
wafer
silicon body
carrier recombination
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KR1019930019495A
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KR100298529B1 (ko
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팔스테르 로버트
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하랄트 유르겐 비안가르디
엠이엠씨 일렉트로닉 메터리얼즈, 에스피에이
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Priority claimed from IT92RM687 external-priority patent/IT1258487B/it
Application filed by 하랄트 유르겐 비안가르디, 엠이엠씨 일렉트로닉 메터리얼즈, 에스피에이 filed Critical 하랄트 유르겐 비안가르디
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ladders (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Heat Treatment Of Sheet Steel (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Abstract

천이 금속 물질, 특히 철로 오염된 실리콘 몸체에서의 소수 캐리어 재결합 수명을 증가시키기 위한 방법. 실리콘 몸체는 금속이 실리콘 몸체로 부터 실리콘 몸체의 표면까지 소수 캐리어 재결합 수명을 저장할 수 있게 증가시키는 정도로 확산을 일으키기에 충분한 온도에서 및 기간동안 저장된다.

Description

실리콘에서의 오염물 제거와 소수 캐리어 수명 개선
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 다양한 길이의 시간동안 280℃에서 저장된(stored) 두께 625마이크론, 직경 150㎜의 CZ 실리콘 위이퍼에 대한 데이타를 도시한다. 단위가 마이크로초인 웨이퍼의 소수 캐리어 재결합 수명이 수직축상에, 단위가 시간인 저장 기간이 수평 축상에 나타나 있다.
제2도는 본 발명에 따라 다양한 길이의 시간동안 400℃에서 저장된 두께 1400마이크론, 직경 150㎜의 MCZ 실리콘 웨이퍼에 대한 데이타를 도시한다. 단위가 마이크로초인 웨이퍼의 소수 캐리어 재결합 수명이 수직 축상에, 단위가 시간인 저장 기간이 수평 축상에 나타나 있다. 실리콘에서의 오염물 제거와 소수 캐리어 수명 개선.

Claims (5)

  1. 철, 크롬, 코발트, 망간, 아연 그리고 바나듐으로 이루어진 군으로부터 선택된 금속으로 오염된 실리콘 몸체에서의 소수 캐리어 재결합 수명을 증가시키는 방법에 있어서, 상기 실리콘 몸체는 상기 금속을 실리콘 몸체의 벌크로부터 실리콘 몸체의 표면으로 확산시키기에 충분한 저장 온도와 저장 기간 동안 저장되어 실리콘 몸체의 소수 캐리어 재결합 수명을 측정할 수 잇게 증가시키며 상기 저장 기간은 약 48시간 이상인 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 실리콘 몸체는 광기전 셀의 충분한 셀의 성분임을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 실리콘 몸체는 실리콘 웨이퍼이고, 상기 금속은 철이고, 상기 웨어펀 철을 웨이퍼 두께의 10%보다 더 크게 웨이퍼 표면으로부터 떨어진 웨이퍼 벌크 영역들로 부터 상기 웨이퍼 표면으로 확산시키기에 충분한 저장 온도 및 저장 기간 동안 저장되고, 상기 저장 온도가 실리콘에서 산소 관련 결함을 생성하기에 불충분하지만 약 200℃이상인 것을 또한 특징으로 하는 방법.
  4. 제1항에 있어서, 상기 저장 온도는 200℃와 약 500℃ 사이인 것을 특징으로 하는 방법.
  5. 제1항에 있어서, 상기 소수 캐리어 재결합 수명은 약 200마이크로초 이상 증가됨을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930019495A 1992-09-23 1993-09-23 실리콘에서의오염물제거와소수캐리어수명개선을위한방법 KR100298529B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
USRM92A000687 1992-09-23
IT92RM687 IT1258487B (it) 1992-09-23 1992-09-23 Procedimento per migliorare il tempo di vita dei portatori di minoranza in fette di silicio o in dispositivi a semiconduttore con esse prodotti
ITRM92A000687 1992-09-23
US07/971,056 US5272119A (en) 1992-09-23 1992-11-03 Process for contamination removal and minority carrier lifetime improvement in silicon
US07/971,056 1992-11-03

Publications (2)

Publication Number Publication Date
KR940008018A true KR940008018A (ko) 1994-04-28
KR100298529B1 KR100298529B1 (ko) 2001-11-30

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Country Status (9)

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US (1) US5272119A (ko)
EP (1) EP0590508B1 (ko)
JP (1) JP2735772B2 (ko)
KR (1) KR100298529B1 (ko)
CN (1) CN1034893C (ko)
AT (1) ATE220477T1 (ko)
DE (1) DE59310292D1 (ko)
FI (1) FI934149A (ko)
MY (1) MY110011A (ko)

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Also Published As

Publication number Publication date
DE59310292D1 (de) 2002-08-14
CN1087208A (zh) 1994-05-25
ATE220477T1 (de) 2002-07-15
EP0590508A3 (en) 1997-10-08
MY110011A (en) 1997-11-29
FI934149A0 (fi) 1993-09-22
JPH06196488A (ja) 1994-07-15
EP0590508A2 (de) 1994-04-06
CN1034893C (zh) 1997-05-14
EP0590508B1 (de) 2002-07-10
JP2735772B2 (ja) 1998-04-02
KR100298529B1 (ko) 2001-11-30
US5272119A (en) 1993-12-21
FI934149A (fi) 1994-03-24

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