KR930024112A - 금속 오염물질의 제거방법 - Google Patents

금속 오염물질의 제거방법 Download PDF

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Publication number
KR930024112A
KR930024112A KR1019930009303A KR930009303A KR930024112A KR 930024112 A KR930024112 A KR 930024112A KR 1019930009303 A KR1019930009303 A KR 1019930009303A KR 930009303 A KR930009303 A KR 930009303A KR 930024112 A KR930024112 A KR 930024112A
Authority
KR
South Korea
Prior art keywords
liquid
peripheral liquid
photostimulation
metal
peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930009303A
Other languages
English (en)
Korean (ko)
Inventor
에이. 더글라스 몬테
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR930024112A publication Critical patent/KR930024112A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1019930009303A 1992-05-29 1993-05-27 금속 오염물질의 제거방법 Ceased KR930024112A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89041592A 1992-05-29 1992-05-29
US7/890,415 1992-05-29

Publications (1)

Publication Number Publication Date
KR930024112A true KR930024112A (ko) 1993-12-21

Family

ID=25396646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930009303A Ceased KR930024112A (ko) 1992-05-29 1993-05-27 금속 오염물질의 제거방법

Country Status (4)

Country Link
EP (2) EP0702400A3 (enExample)
JP (1) JPH0661217A (enExample)
KR (1) KR930024112A (enExample)
TW (1) TW267240B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6296714B1 (en) * 1997-01-16 2001-10-02 Mitsubishi Materials Silicon Corporation Washing solution of semiconductor substrate and washing method using the same
US6482269B1 (en) 1997-05-29 2002-11-19 Memc Electronic Materials, Inc. Process for the removal of copper and other metallic impurities from silicon
JP3510562B2 (ja) 2000-04-28 2004-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法及び処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275200A (ja) * 1985-05-28 1986-12-05 Tokai Carbon Co Ltd ＳｉＣウイスカ−の精製方法
JPH0719764B2 (ja) * 1986-07-28 1995-03-06 大日本スクリ−ン製造株式会社 表面洗浄方法
DE3867284D1 (de) * 1987-03-11 1992-02-13 Omco Co Ltd Wasserelektrolyse-vorrichtung.
JP2540583B2 (ja) * 1988-03-07 1996-10-02 日本電信電話株式会社 基板の清浄化処理方法およびその装置
JPH02102529A (ja) * 1988-10-12 1990-04-16 Matsushita Electron Corp マスク洗浄方法
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JPH0382029A (ja) * 1989-08-24 1991-04-08 Nec Corp 湿式処理装置
JPH0475339A (ja) * 1990-07-17 1992-03-10 Seiko Epson Corp 電界洗浄法
EP0502356A3 (en) * 1991-02-28 1993-03-10 Texas Instruments Incorporated Photo-stimulated removal of trace metals
EP0567939A3 (en) * 1992-04-29 1993-12-15 Texas Instruments Inc Method of removing small particles from a surface

Also Published As

Publication number Publication date
JPH0661217A (ja) 1994-03-04
EP0571950A3 (en) 1993-12-15
EP0571950A2 (en) 1993-12-01
EP0702400A3 (en) 1996-05-15
TW267240B (enExample) 1996-01-01
EP0702400A2 (en) 1996-03-20

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