KR970067682A - 기판 표면으로부터 탄소를 제거하는 방법 - Google Patents

기판 표면으로부터 탄소를 제거하는 방법 Download PDF

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Publication number
KR970067682A
KR970067682A KR1019970011020A KR19970011020A KR970067682A KR 970067682 A KR970067682 A KR 970067682A KR 1019970011020 A KR1019970011020 A KR 1019970011020A KR 19970011020 A KR19970011020 A KR 19970011020A KR 970067682 A KR970067682 A KR 970067682A
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substrate
substrate surface
vapor
atmosphere
heating
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KR1019970011020A
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KR100356567B1 (ko
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에드워드 호머 아서
마아크 리트윈 마이클
부루스 알바우프 케빈
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조안 엠. 젤사
프랙스에어 테크놀로지, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 기판을 염소 분자와 증기의 대기중에서 가열하여 기판 표면으로부터 탄소 및 금속 원소와 같은 물질을 제거하는 방법에 관한 것이다. 바람직한 구체예에 있어서, 탄소 잔류물은 Si 또는 GaAs의 기판 물질 표면으로부터 제거된다.

Description

기판 표면으로부터 탄소를 제거하는 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 1은 스트리핑 공정에서 레이저를 인가한 후에 남아있는 탄소 잔류물을 제거하는데 사용되는 장치를 도시한다.

Claims (10)

  1. 기판 표면으로부터 탄소를 제거하는 방법으로서, 증기와 염소 분자 기체를 함유하는 대기중에서 상기 기판을 가열하는 것을 포함하는 방법.
  2. 제 1 항에 있어서, 상기 기판을 200℃ 이하의 온도로 가열시키는 것을 특징으로 하는 방법.
  3. 제 1 항에 있어서, 상기 기판을 100℃ 이상의 온도로 가열시키는 것을 특징으로 하는 방법.
  4. 제 1 항에 있어서, 상기 기판을 150℃의 온도로 가열시키는 것을 특징으로 하는 방법.
  5. 제 1 항에 있어서, 상기 증기와 염소 분자 기체가 상기 대기중에서 1:1 내지 15:1의 몰비로 존재하는 것을 특징으로 하는 방법.
  6. 제 1 항에 있어서, 상기 증기 및 염소 분자 기체가 상기 대기중에서 12:1의 비율로 존재하는 것을 특징으로 하는 방법.
  7. 제 1 항에 있어서, 상기 가열이 노에서 일어나는 것을 특징으로 하는 방법.
  8. 제 1 항에 있어서, 상기 기판이 Si 및 GaAs 로 구성된 군으로부터 선택되는 것을 특징으로 하는 방법.
  9. 기판 표면으로부터 포토레지스트를 제거하는 방법으로서, a) 포토레지스트를 기판 표면으로부터 제거하여 탄소 잔류물이 잔존하도록 기판 표면에 레이저빔을 가하는 단계; 및 b) 증기 및 염소 분자 기체의 대기중에서 상기 웨이퍼를 가열하여 상기 표면으로부터 잔류 탄소를 제거하는 단계를 포함하는 방법.
  10. 기판 표면으로부터 미량의 오염 원소를 제거하는 방법으로서, 증기 및 염소분자 기체의 대기중에서 상기 기판을 가열시키는 것을 포함하는 방법.
KR1019970011020A 1996-03-29 1997-03-28 기판표면으로부터탄소를제거하는방법 KR100356567B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/625,673 US5998305A (en) 1996-03-29 1996-03-29 Removal of carbon from substrate surfaces
US08/625,673 1996-03-29

Publications (2)

Publication Number Publication Date
KR970067682A true KR970067682A (ko) 1997-10-13
KR100356567B1 KR100356567B1 (ko) 2002-12-18

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US (2) US5998305A (ko)
EP (1) EP0798767B1 (ko)
JP (1) JP3367859B2 (ko)
KR (1) KR100356567B1 (ko)
CN (1) CN1113393C (ko)
DE (1) DE69726634T2 (ko)
ID (1) ID18292A (ko)
IL (1) IL120522A (ko)

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Also Published As

Publication number Publication date
JPH1032193A (ja) 1998-02-03
EP0798767A2 (en) 1997-10-01
CN1113393C (zh) 2003-07-02
CN1166051A (zh) 1997-11-26
DE69726634T2 (de) 2004-09-30
IL120522A0 (en) 1997-07-13
EP0798767B1 (en) 2003-12-10
KR100356567B1 (ko) 2002-12-18
JP3367859B2 (ja) 2003-01-20
EP0798767A3 (en) 1998-03-11
IL120522A (en) 2003-09-17
US5998305A (en) 1999-12-07
ID18292A (id) 1998-03-26
US6242368B1 (en) 2001-06-05
DE69726634D1 (de) 2004-01-22

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