ID18292A - Penghilangan karbon dari permukaan substrat - Google Patents

Penghilangan karbon dari permukaan substrat

Info

Publication number
ID18292A
ID18292A IDP971042A ID971042A ID18292A ID 18292 A ID18292 A ID 18292A ID P971042 A IDP971042 A ID P971042A ID 971042 A ID971042 A ID 971042A ID 18292 A ID18292 A ID 18292A
Authority
ID
Indonesia
Prior art keywords
substrate surfaces
carbon elimination
elimination
carbon
substrate
Prior art date
Application number
IDP971042A
Other languages
English (en)
Inventor
Arthur Edward Holmer
Michael Mark Litwin
Kevin Bruce Albaugh
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of ID18292A publication Critical patent/ID18292A/id

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IDP971042A 1996-03-29 1997-03-27 Penghilangan karbon dari permukaan substrat ID18292A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/625,673 US5998305A (en) 1996-03-29 1996-03-29 Removal of carbon from substrate surfaces

Publications (1)

Publication Number Publication Date
ID18292A true ID18292A (id) 1998-03-26

Family

ID=24507098

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP971042A ID18292A (id) 1996-03-29 1997-03-27 Penghilangan karbon dari permukaan substrat

Country Status (8)

Country Link
US (2) US5998305A (id)
EP (1) EP0798767B1 (id)
JP (1) JP3367859B2 (id)
KR (1) KR100356567B1 (id)
CN (1) CN1113393C (id)
DE (1) DE69726634T2 (id)
ID (1) ID18292A (id)
IL (1) IL120522A (id)

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US6261978B1 (en) * 1999-02-22 2001-07-17 Motorola, Inc. Process for forming semiconductor device with thick and thin films
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US6838395B1 (en) * 2002-12-30 2005-01-04 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor crystal
US7592264B2 (en) 2005-11-23 2009-09-22 Fsi International, Inc. Process for removing material from substrates
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US20080078424A1 (en) * 2006-09-28 2008-04-03 Applied Materials, Inc. Methods to accelerate photoimageable material stripping from a substrate
JP5199339B2 (ja) * 2007-05-18 2013-05-15 ティーイーエル エフエスアイ，インコーポレイティド 水蒸気または蒸気を用いた基板の処理方法
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
DE102009015712A1 (de) * 2009-03-31 2010-10-14 Globalfoundries Dresden Module One Llc & Co. Kg Materialentfernung in Halbleiterbauelementen durch Verdampfen
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9169155B2 (en) * 2012-05-03 2015-10-27 Guardian Industries Corp. Method and apparatus for making vacuum insulated glass (VIG) window unit including cleaning cavity thereof
US8871108B2 (en) 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9017934B2 (en) * 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102574914B1 (ko) 2017-06-02 2023-09-04 어플라이드 머티어리얼스, 인코포레이티드 보론 카바이드 하드마스크의 건식 스트리핑
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
KR102396319B1 (ko) 2017-11-11 2022-05-09 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
CN111373519B (zh) 2017-11-16 2021-11-23 应用材料公司 高压蒸气退火处理设备
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111699549A (zh) 2018-01-24 2020-09-22 应用材料公司 使用高压退火的接缝弥合
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
CN112640065A (zh) 2018-10-30 2021-04-09 应用材料公司 用于蚀刻用于半导体应用的结构的方法
CN112996950B (zh) 2018-11-16 2024-04-05 应用材料公司 使用增强扩散工艺的膜沉积
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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JPS5374373A (en) * 1976-12-15 1978-07-01 Toshiba Corp Manufacture of semiconductor device
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IL84255A (en) * 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
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US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
US5443942A (en) * 1990-11-28 1995-08-22 Canon Kabushiki Kaisha Process for removing resist
US5236512A (en) * 1991-08-14 1993-08-17 Thiokol Corporation Method and apparatus for cleaning surfaces with plasma
US5326426A (en) * 1991-11-14 1994-07-05 Tam Andrew C Undercut membrane mask for high energy photon patterning
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
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JPH05307437A (ja) 1992-04-28 1993-11-19 Nhk Spring Co Ltd ポインティングデバイス
JPH0737807A (ja) * 1993-07-21 1995-02-07 Hitachi Ltd 原子、分子線による表面処理方法およびその装置
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Also Published As

Publication number Publication date
EP0798767A2 (en) 1997-10-01
CN1113393C (zh) 2003-07-02
DE69726634T2 (de) 2004-09-30
JPH1032193A (ja) 1998-02-03
EP0798767B1 (en) 2003-12-10
IL120522A (en) 2003-09-17
EP0798767A3 (en) 1998-03-11
DE69726634D1 (de) 2004-01-22
KR970067682A (ko) 1997-10-13
US5998305A (en) 1999-12-07
IL120522A0 (en) 1997-07-13
JP3367859B2 (ja) 2003-01-20
CN1166051A (zh) 1997-11-26
US6242368B1 (en) 2001-06-05
KR100356567B1 (ko) 2002-12-18

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