KR930022468A - X-선 패턴 도형용 마스크 - Google Patents

X-선 패턴 도형용 마스크

Info

Publication number
KR930022468A
KR930022468A KR1019930004935A KR930004935A KR930022468A KR 930022468 A KR930022468 A KR 930022468A KR 1019930004935 A KR1019930004935 A KR 1019930004935A KR 930004935 A KR930004935 A KR 930004935A KR 930022468 A KR930022468 A KR 930022468A
Authority
KR
South Korea
Prior art keywords
mask
patterned
absorber layer
repair
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019930004935A
Other languages
English (en)
Korean (ko)
Inventor
테넌트 도날드
Original Assignee
죠지 에스. 인딕
아메리칸 텔리폰 앤드 텔레그라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 죠지 에스. 인딕, 아메리칸 텔리폰 앤드 텔레그라프 캄파니 filed Critical 죠지 에스. 인딕
Publication of KR930022468A publication Critical patent/KR930022468A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1019930004935A 1992-04-03 1993-03-29 X-선 패턴 도형용 마스크 Abandoned KR930022468A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/862,684 US5304437A (en) 1992-04-03 1992-04-03 Mask for x-ray pattern delineation
US862,684 1992-04-03

Publications (1)

Publication Number Publication Date
KR930022468A true KR930022468A (ko) 1993-11-24

Family

ID=25339054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930004935A Abandoned KR930022468A (ko) 1992-04-03 1993-03-29 X-선 패턴 도형용 마스크

Country Status (8)

Country Link
US (1) US5304437A (https=)
EP (1) EP0569123B1 (https=)
JP (1) JPH0629196A (https=)
KR (1) KR930022468A (https=)
CA (1) CA2090157C (https=)
DE (1) DE69307768T2 (https=)
HK (1) HK118697A (https=)
TW (1) TW234210B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015640A (en) * 1998-03-26 2000-01-18 Euv Llc Mask fabrication process
US6277539B1 (en) * 1998-05-22 2001-08-21 The United States Of America As Represented By The United States Department Of Energy Enhanced adhesion for LIGA microfabrication by using a buffer layer
AU5932500A (en) 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6818357B2 (en) 2001-10-03 2004-11-16 Intel Corporation Photolithographic mask fabrication
DE10155112B4 (de) * 2001-11-09 2006-02-02 Infineon Technologies Ag Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
JP3816809B2 (ja) 2002-01-30 2006-08-30 株式会社日立製作所 薬剤、薬剤キャリア、薬剤の製造方法及び腫瘍の治療方法
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
DE10223113B4 (de) * 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
JP3842188B2 (ja) 2002-08-28 2006-11-08 株式会社日立製作所 超音波治療装置
US6988342B2 (en) 2003-01-17 2006-01-24 Masonite Corporation Door skin, a method of etching a plate for forming a wood grain pattern in the door skin, and an etched plate formed therefrom
US7959817B2 (en) 2004-01-09 2011-06-14 Masonite Corporation Door skin, a method of etching a plate, and an etched plate formed therefrom
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
KR102520797B1 (ko) * 2015-10-15 2023-04-12 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법
US20230280644A1 (en) * 2022-03-03 2023-09-07 International Business Machines Corporation Method of making euv mask with an absorber layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673018A (en) * 1969-05-08 1972-06-27 Rca Corp Method of fabrication of photomasks
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
EP0424375B1 (en) * 1987-10-09 1993-10-13 Hughes Aircraft Company Monolithic channeling mask having amorphous/single crystal construction
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system

Also Published As

Publication number Publication date
CA2090157A1 (en) 1993-10-04
JPH0629196A (ja) 1994-02-04
HK118697A (en) 1997-09-05
DE69307768T2 (de) 1997-05-28
CA2090157C (en) 1996-07-30
EP0569123A2 (en) 1993-11-10
EP0569123A3 (en) 1994-08-24
EP0569123B1 (en) 1997-01-29
TW234210B (https=) 1994-11-11
DE69307768D1 (de) 1997-03-13
US5304437A (en) 1994-04-19

Similar Documents

Publication Publication Date Title
KR930022468A (ko) X-선 패턴 도형용 마스크
DE10353767B4 (de) Vorrichtung zur Häusung einer mikromechanischen Struktur und Verfahren zur Herstellung derselben
JPS57172735A (en) Multilayer photoresist processing
DE19632845A1 (de) Mit Phasenverschiebung arbeitende Halbtonmaske sowie Verfahren zum Herstellen einer solchen
JP2004518990A5 (https=)
KR920022559A (ko) 반도체 소자 제조방법 및 이에 따라 제조된 반도체 소자
US6821690B2 (en) Photomask and method for forming micro patterns of semiconductor device using the same
US20010016247A1 (en) Laminate structure and method of manufacturing the same
DE2835363A1 (de) Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen
JPS5595324A (en) Manufacturing method of semiconductor device
KR890012341A (ko) 색수상관 새도우 마스크 제조방법
US6635388B1 (en) Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask
JPS57192027A (en) Forming method of photosensitive resin window
JPS5914888B2 (ja) パタ−ン形成方法
JPS5461931A (en) Forming method of photo resist patterns
JPS56137632A (en) Pattern forming
KR0139578B1 (ko) 리소그래피 공정에 의한 감광막 패턴 형성방법
JPH04206812A (ja) 微細パターンの形成方法
JPS5657039A (en) Forming method of metal pattern
KR950025905A (ko) 포토마스크 제작방법
KR970002449A (ko) 포토마스크의 결함수정방법
KR960008549B1 (ko) 이중 포토레지스트 공정에 의한 구조적 정합의 제조방법
KR950021082A (ko) 반도체 장치의 콘택홀 제조방법
RU94021400A (ru) Способ формирования структур в фотолитографии
JPS55124230A (en) Forming method of pattern

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20001226

Effective date: 20011228

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20011228

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 1993 4935

Appeal request date: 20001226

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2000101002977

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U13-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000