TW234210B - - Google Patents

Info

Publication number
TW234210B
TW234210B TW081105416A TW81105416A TW234210B TW 234210 B TW234210 B TW 234210B TW 081105416 A TW081105416 A TW 081105416A TW 81105416 A TW81105416 A TW 81105416A TW 234210 B TW234210 B TW 234210B
Authority
TW
Taiwan
Application number
TW081105416A
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW234210B publication Critical patent/TW234210B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW081105416A 1992-04-03 1992-07-08 TW234210B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/862,684 US5304437A (en) 1992-04-03 1992-04-03 Mask for x-ray pattern delineation

Publications (1)

Publication Number Publication Date
TW234210B true TW234210B (zh) 1994-11-11

Family

ID=25339054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081105416A TW234210B (zh) 1992-04-03 1992-07-08

Country Status (8)

Country Link
US (1) US5304437A (zh)
EP (1) EP0569123B1 (zh)
JP (1) JPH0629196A (zh)
KR (1) KR930022468A (zh)
CA (1) CA2090157C (zh)
DE (1) DE69307768T2 (zh)
HK (1) HK118697A (zh)
TW (1) TW234210B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015640A (en) * 1998-03-26 2000-01-18 Euv Llc Mask fabrication process
US6277539B1 (en) * 1998-05-22 2001-08-21 The United States Of America As Represented By The United States Department Of Energy Enhanced adhesion for LIGA microfabrication by using a buffer layer
KR100647968B1 (ko) 1999-07-22 2006-11-17 코닝 인코포레이티드 극 자외선 소프트 ｘ-선 투사 리소그라피 방법 및 마스크디바이스
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6818357B2 (en) 2001-10-03 2004-11-16 Intel Corporation Photolithographic mask fabrication
DE10155112B4 (de) * 2001-11-09 2006-02-02 Infineon Technologies Ag Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
JP3816809B2 (ja) 2002-01-30 2006-08-30 株式会社日立製作所 薬剤、薬剤キャリア、薬剤の製造方法及び腫瘍の治療方法
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
DE10223113B4 (de) 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
JP3842188B2 (ja) 2002-08-28 2006-11-08 株式会社日立製作所 超音波治療装置
US6988342B2 (en) 2003-01-17 2006-01-24 Masonite Corporation Door skin, a method of etching a plate for forming a wood grain pattern in the door skin, and an etched plate formed therefrom
US7959817B2 (en) 2004-01-09 2011-06-14 Masonite Corporation Door skin, a method of etching a plate, and an etched plate formed therefrom
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
KR102520797B1 (ko) * 2015-10-15 2023-04-12 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673018A (en) * 1969-05-08 1972-06-27 Rca Corp Method of fabrication of photomasks
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
WO1989003544A1 (en) * 1987-10-09 1989-04-20 Hughes Aircraft Company Monolithic channeling mask having amorphous/single crystal construction
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system

Also Published As

Publication number Publication date
DE69307768T2 (de) 1997-05-28
CA2090157A1 (en) 1993-10-04
DE69307768D1 (de) 1997-03-13
CA2090157C (en) 1996-07-30
EP0569123B1 (en) 1997-01-29
US5304437A (en) 1994-04-19
KR930022468A (ko) 1993-11-24
EP0569123A2 (en) 1993-11-10
EP0569123A3 (en) 1994-08-24
HK118697A (en) 1997-09-05
JPH0629196A (ja) 1994-02-04

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent