KR930019843A - 반도체 전기 접촉부로 유용한 갈륨 및 알루미늄 합유 합금 - Google Patents
반도체 전기 접촉부로 유용한 갈륨 및 알루미늄 합유 합금 Download PDFInfo
- Publication number
- KR930019843A KR930019843A KR1019930003980A KR930003980A KR930019843A KR 930019843 A KR930019843 A KR 930019843A KR 1019930003980 A KR1019930003980 A KR 1019930003980A KR 930003980 A KR930003980 A KR 930003980A KR 930019843 A KR930019843 A KR 930019843A
- Authority
- KR
- South Korea
- Prior art keywords
- alloy
- group
- substrate
- semiconductor device
- metal
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 25
- 239000000956 alloy Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract 6
- 229910000838 Al alloy Inorganic materials 0.000 title 1
- 229910000807 Ga alloy Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 20
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract 21
- 229910052751 metal Inorganic materials 0.000 claims abstract 18
- 239000002184 metal Substances 0.000 claims abstract 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract 12
- 229910052741 iridium Inorganic materials 0.000 claims abstract 7
- 229910052703 rhodium Inorganic materials 0.000 claims abstract 7
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 4
- 238000004544 sputter deposition Methods 0.000 claims abstract 4
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 20
- 239000008187 granular material Substances 0.000 claims 7
- 229910017052 cobalt Inorganic materials 0.000 claims 6
- 239000010941 cobalt Substances 0.000 claims 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 6
- 239000010948 rhodium Substances 0.000 claims 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 3
- 150000002739 metals Chemical class 0.000 claims 3
- 239000000843 powder Substances 0.000 claims 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 3
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 235000001258 Cinchona calisaya Nutrition 0.000 claims 1
- 229910001096 P alloy Inorganic materials 0.000 claims 1
- LOUPRKONTZGTKE-WZBLMQSHSA-N Quinine Natural products C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21 LOUPRKONTZGTKE-WZBLMQSHSA-N 0.000 claims 1
- LOUPRKONTZGTKE-UHFFFAOYSA-N cinchonine Natural products C1C(C(C2)C=C)CCN2C1C(O)C1=CC=NC2=CC=C(OC)C=C21 LOUPRKONTZGTKE-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 235000013305 food Nutrition 0.000 claims 1
- 238000005469 granulation Methods 0.000 claims 1
- 230000003179 granulation Effects 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 229960000948 quinine Drugs 0.000 claims 1
- -1 quinine metals Chemical class 0.000 claims 1
- 239000003507 refrigerant Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85172992A | 1992-03-17 | 1992-03-17 | |
| CN07/851,729 | 1992-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR930019843A true KR930019843A (ko) | 1993-10-19 |
Family
ID=25311520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930003980A KR930019843A (ko) | 1992-03-17 | 1993-03-16 | 반도체 전기 접촉부로 유용한 갈륨 및 알루미늄 합유 합금 |
Country Status (5)
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2937817B2 (ja) * | 1995-08-01 | 1999-08-23 | 松下電子工業株式会社 | 半導体基板表面の酸化膜の形成方法及びｍｏｓ半導体デバイスの製造方法 |
| JP3685429B2 (ja) * | 1996-08-06 | 2005-08-17 | シャープ株式会社 | ショットキー接合の解析方法、半導体ウェーハの評価方法、絶縁膜の評価方法、およびショットキー接合解析装置 |
| US6708022B1 (en) * | 1997-12-22 | 2004-03-16 | Renesas Technology Corporation | Power amplification system and mobile radio communication terminal |
| TW385366B (en) * | 1998-06-05 | 2000-03-21 | Nat Science Council | Hydrogen-sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor |
| KR100351238B1 (ko) * | 1999-09-14 | 2002-09-09 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
| US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6861905B2 (en) * | 2000-05-08 | 2005-03-01 | Renesas Technology Corp. | Power amplifier system and mobile communication terminal device |
| US6406929B1 (en) * | 2000-06-21 | 2002-06-18 | University Of Vermont And State Agricultural College | Structure and method for abrupt PN junction diode formed using chemical vapor deposition processing |
| US6678507B1 (en) * | 2000-08-31 | 2004-01-13 | Hitachi, Ltd. | Power amplifier system and mobile communication terminal device |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| US6661039B1 (en) * | 2001-05-18 | 2003-12-09 | Lucent Technologies Inc. | Velocity-cooled hot-electron bolometric mixer/detector |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6872644B1 (en) * | 2001-07-03 | 2005-03-29 | Advanced Micro Devices, Inc. | Semiconductor device with non-compounded contacts, and method of making |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US6764551B2 (en) * | 2001-10-05 | 2004-07-20 | International Business Machines Corporation | Process for removing dopant ions from a substrate |
| US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| ES2302663B2 (es) * | 2008-02-28 | 2009-02-16 | Universidad Politecnica De Madrid | Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia. |
| WO2009152368A1 (en) * | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Application specific implant system and method for use in solar cell fabrications |
| WO2010039284A1 (en) * | 2008-09-30 | 2010-04-08 | Youngstown State University | Silicon carbide barrier diode |
| EP2409331A4 (en) * | 2009-03-20 | 2017-06-28 | Intevac, Inc. | Advanced high efficiency crystalline solar cell fabrication method |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| KR20120137361A (ko) * | 2010-02-09 | 2012-12-20 | 인테벡, 인코포레이티드 | 태양 전지 제조용의 조정가능한 섀도우 마스크 어셈블리 |
| JP6087520B2 (ja) * | 2011-07-13 | 2017-03-01 | キヤノン株式会社 | ダイオード素子及び検出素子 |
| MY175007A (en) | 2011-11-08 | 2020-06-02 | Intevac Inc | Substrate processing system and method |
| WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
| CN113025846A (zh) * | 2015-12-23 | 2021-06-25 | 美题隆公司 | 用于生物传感器的金属合金 |
| RU2666180C2 (ru) * | 2016-01-26 | 2018-09-06 | Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") | Способ изготовления выпрямляющих контактов к арсениду галлия электрохимическим осаждением рутения |
| US9966230B1 (en) * | 2016-10-13 | 2018-05-08 | Kla-Tencor Corporation | Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer |
| US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
| CN109585570A (zh) * | 2018-12-19 | 2019-04-05 | 吉林麦吉柯半导体有限公司 | 肖特基二极管、nipt95合金及肖特基二极管的制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB931541A (en) * | 1960-09-13 | 1963-07-17 | Siemens Ag | A process for making a material suitable for use in producing shaped sintered parts |
| LU61433A1 (US20030199744A1-20031023-C00003.png) * | 1970-07-29 | 1972-04-04 | ||
| JPS53925B2 (US20030199744A1-20031023-C00003.png) * | 1974-05-04 | 1978-01-13 | ||
| US4526624A (en) * | 1982-07-02 | 1985-07-02 | California Institute Of Technology | Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
| JPS59220966A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置 |
| US4796082A (en) * | 1987-03-16 | 1989-01-03 | International Business Machines Corporation | Thermally stable ohmic contact for gallium-arsenide |
| US4847675A (en) * | 1987-05-07 | 1989-07-11 | The Aerospace Corporation | Stable rare-earth alloy graded junction contact devices using III-V type substrates |
| US4771017A (en) * | 1987-06-23 | 1988-09-13 | Spire Corporation | Patterning process |
| WO1989004057A1 (en) * | 1987-10-20 | 1989-05-05 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
| US5016074A (en) * | 1987-10-20 | 1991-05-14 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
| US5019891A (en) * | 1988-01-20 | 1991-05-28 | Hitachi, Ltd. | Semiconductor device and method of fabricating the same |
| US5116438A (en) * | 1991-03-04 | 1992-05-26 | General Electric Company | Ductility NiAl intermetallic compounds microalloyed with gallium |
-
1992
- 1992-11-04 TW TW081108813A patent/TW232079B/zh active
-
1993
- 1993-03-12 EP EP93301890A patent/EP0561567A3/en not_active Withdrawn
- 1993-03-16 KR KR1019930003980A patent/KR930019843A/ko not_active Application Discontinuation
- 1993-03-17 JP JP5057357A patent/JPH0673476A/ja active Pending
- 1993-06-30 US US08/085,622 patent/US5516725A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0673476A (ja) | 1994-03-15 |
| TW232079B (US20030199744A1-20031023-C00003.png) | 1994-10-11 |
| EP0561567A3 (en) | 1995-08-23 |
| EP0561567A2 (en) | 1993-09-22 |
| US5516725A (en) | 1996-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |