KR930018792A - 반도체레이저장치 - Google Patents

반도체레이저장치 Download PDF

Info

Publication number
KR930018792A
KR930018792A KR1019930001384A KR930001384A KR930018792A KR 930018792 A KR930018792 A KR 930018792A KR 1019930001384 A KR1019930001384 A KR 1019930001384A KR 930001384 A KR930001384 A KR 930001384A KR 930018792 A KR930018792 A KR 930018792A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
chip
laser device
photodiode
laser chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930001384A
Other languages
English (en)
Korean (ko)
Inventor
요시키 쿠하라
히로미 니키니시
이찌로 토나이
카즈히또 무리키미
Original Assignee
쿠라우찌 노리타카
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쿠라우찌 노리타카, 스미도모덴기고오교오 가부시기가이샤 filed Critical 쿠라우찌 노리타카
Publication of KR930018792A publication Critical patent/KR930018792A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1019930001384A 1992-02-03 1993-02-02 반도체레이저장치 Ceased KR930018792A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01762592A JP3245838B2 (ja) 1992-02-03 1992-02-03 半導体レーザ装置
JP92-17625 1992-02-03

Publications (1)

Publication Number Publication Date
KR930018792A true KR930018792A (ko) 1993-09-22

Family

ID=11949054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930001384A Ceased KR930018792A (ko) 1992-02-03 1993-02-02 반도체레이저장치

Country Status (7)

Country Link
EP (1) EP0556639B1 (enExample)
JP (1) JP3245838B2 (enExample)
KR (1) KR930018792A (enExample)
CA (1) CA2088286C (enExample)
DE (1) DE69300247T2 (enExample)
DK (1) DK0556639T3 (enExample)
TW (1) TW252217B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230246B1 (ko) * 1995-01-24 1999-11-15 윤종용 반도체 레이저와 이를 이용한 기록재생용 부상형 광픽업 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2828025B2 (ja) * 1996-03-29 1998-11-25 日本電気株式会社 半導体レーザモジュール
US6647039B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Reconfigurable laser header
US6859470B2 (en) 2002-02-27 2005-02-22 Jds Uniphase Corporation Air trench that limits thermal coupling between laser and laser driver
US6646777B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Optical isolator with improved mounting characteristics
JP2005175050A (ja) * 2003-12-09 2005-06-30 Sony Corp 半導体レーザおよび外部共振器型半導体レーザ
US20150369991A1 (en) * 2014-06-23 2015-12-24 Corning Incorporated Light diffusing fiber lighting device having a single lens

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040187A (en) * 1990-01-03 1991-08-13 Karpinski Arthur A Monolithic laser diode array
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230246B1 (ko) * 1995-01-24 1999-11-15 윤종용 반도체 레이저와 이를 이용한 기록재생용 부상형 광픽업 장치

Also Published As

Publication number Publication date
DE69300247T2 (de) 1996-04-04
JP3245838B2 (ja) 2002-01-15
JPH05218583A (ja) 1993-08-27
EP0556639B1 (en) 1995-07-12
TW252217B (enExample) 1995-07-21
CA2088286A1 (en) 1993-08-04
DE69300247D1 (de) 1995-08-17
DK0556639T3 (da) 1995-12-04
CA2088286C (en) 2001-09-04
EP0556639A1 (en) 1993-08-25

Similar Documents

Publication Publication Date Title
US6005262A (en) Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector
US5353294A (en) Semiconductor laser device and semiconductor laser module
US5412229A (en) Semiconductor light detecting device making use of a photodiode chip
JP2661521B2 (ja) 半導体受光装置
US5542018A (en) Semiconductor laser device making use of photodiode chip
KR930018792A (ko) 반도체레이저장치
US8723102B2 (en) Optical module
WO2003088367A8 (en) Integrated active photonic device and photodetector
JPH04111478A (ja) 受光素子
US4954853A (en) Optical semiconductor device
JP2004214671A (ja) 光通信用レーザーダイオードモジュール
KR930018885A (ko) 반도체 수광장치
JP2003101133A (ja) 発光モジュール
JPH08148756A (ja) 半導体レーザ装置
JPS6039880A (ja) 発光装置
US5345074A (en) Semiconductor light source
JPS5669882A (en) Semiconductor luminous device
KR100326038B1 (ko) 반도체레이저다이오드패키지
JPH04360593A (ja) 半導体レーザ装置
JP3191823B2 (ja) 半導体受光装置
JPS61136279A (ja) 半導体発光装置
JP3593998B2 (ja) フォトダイオードチップ
JP2000266968A (ja) 光半導体モジュール
JPS6184086A (ja) 半導体レ−ザ装置
JPS605592Y2 (ja) 半導体レ−ザ装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000