DE69300247T2 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE69300247T2
DE69300247T2 DE69300247T DE69300247T DE69300247T2 DE 69300247 T2 DE69300247 T2 DE 69300247T2 DE 69300247 T DE69300247 T DE 69300247T DE 69300247 T DE69300247 T DE 69300247T DE 69300247 T2 DE69300247 T2 DE 69300247T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
chip
laser device
light
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69300247T
Other languages
German (de)
English (en)
Other versions
DE69300247D1 (de
Inventor
Yoshiki Kuhara
Kazuhito Murakami
Hiromi Nakanishi
Ichiro Tonai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69300247D1 publication Critical patent/DE69300247D1/de
Publication of DE69300247T2 publication Critical patent/DE69300247T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69300247T 1992-02-03 1993-02-03 Halbleiterlaservorrichtung. Expired - Fee Related DE69300247T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01762592A JP3245838B2 (ja) 1992-02-03 1992-02-03 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69300247D1 DE69300247D1 (de) 1995-08-17
DE69300247T2 true DE69300247T2 (de) 1996-04-04

Family

ID=11949054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69300247T Expired - Fee Related DE69300247T2 (de) 1992-02-03 1993-02-03 Halbleiterlaservorrichtung.

Country Status (7)

Country Link
EP (1) EP0556639B1 (enExample)
JP (1) JP3245838B2 (enExample)
KR (1) KR930018792A (enExample)
CA (1) CA2088286C (enExample)
DE (1) DE69300247T2 (enExample)
DK (1) DK0556639T3 (enExample)
TW (1) TW252217B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230246B1 (ko) * 1995-01-24 1999-11-15 윤종용 반도체 레이저와 이를 이용한 기록재생용 부상형 광픽업 장치
JP2828025B2 (ja) * 1996-03-29 1998-11-25 日本電気株式会社 半導体レーザモジュール
US6647039B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Reconfigurable laser header
US6859470B2 (en) 2002-02-27 2005-02-22 Jds Uniphase Corporation Air trench that limits thermal coupling between laser and laser driver
US6646777B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Optical isolator with improved mounting characteristics
JP2005175050A (ja) * 2003-12-09 2005-06-30 Sony Corp 半導体レーザおよび外部共振器型半導体レーザ
US20150369991A1 (en) * 2014-06-23 2015-12-24 Corning Incorporated Light diffusing fiber lighting device having a single lens

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040187A (en) * 1990-01-03 1991-08-13 Karpinski Arthur A Monolithic laser diode array
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子

Also Published As

Publication number Publication date
JP3245838B2 (ja) 2002-01-15
JPH05218583A (ja) 1993-08-27
EP0556639B1 (en) 1995-07-12
TW252217B (enExample) 1995-07-21
KR930018792A (ko) 1993-09-22
CA2088286A1 (en) 1993-08-04
DE69300247D1 (de) 1995-08-17
DK0556639T3 (da) 1995-12-04
CA2088286C (en) 2001-09-04
EP0556639A1 (en) 1993-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee