KR930014867A - 본딩와이어 검사장치 - Google Patents

본딩와이어 검사장치 Download PDF

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Publication number
KR930014867A
KR930014867A KR1019920021558A KR920021558A KR930014867A KR 930014867 A KR930014867 A KR 930014867A KR 1019920021558 A KR1019920021558 A KR 1019920021558A KR 920021558 A KR920021558 A KR 920021558A KR 930014867 A KR930014867 A KR 930014867A
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South Korea
Prior art keywords
bonding wire
wire inspection
inspection device
view
lead
Prior art date
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KR1019920021558A
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English (en)
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KR960005091B1 (ko
Inventor
겐지 스가하라
Original Assignee
아라이 가즈오
가부시끼가이샤 신가와
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Publication of KR930014867A publication Critical patent/KR930014867A/ko
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Publication of KR960005091B1 publication Critical patent/KR960005091B1/ko

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    • HELECTRICITY
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    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
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    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2853Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • GPHYSICS
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    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
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Abstract

내용 없음

Description

본딩와이어 검사장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한실시예에 의한 본딩와이어 검사장치의 구성을 도시하는 단면도.
제2도는 제1도의 대물렌즈군의 Z방향 구동구조의 사시도.
제3도는 제1도의 링형상 조명수단의 단면도.
제4도는 제3도의 링형상 조명수단의 배치설명도.
제5도는 조명전환회로의 블록도이다.
제6도는 제1도의 본딩와이어 검사장치의 제어회로 블록도.
제7도는 본딩와이어 검사방법의 1실시예를 예시하는 설명도.
제8도는 제7도의 경우에 있어서 적합치 않음을 나타내는 설명도.
제9(a)도, 제9(b)도, 제9(c)도는 제8도 경우의 영상설명도.
제10도는 본딩와이어 검사방법의 다른 실시예를 도시하는 설명도.
제11도는 제10도의 방법에 의해 검출된 볼형상의 설명도.
제12도는 크레센트 검사방법의 설명도.
제13도는 와이어높이의 검사방법으로 반도체칩에 촛점을 맞춘 설명도.
제14도는 와이어높이의 검사방법으로 리이드에 촛점을 맞춘 설명도.
제15도는 와이어본딩된 반도체장치의 평면도.
제16도는 제15도의 정면도.
제17도는 본딩와이어의 확대정면 설명도.
제18도는 제17도의 평면도.
제19도는 종래의 본딩와이어 검사장치의 구성도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반도체 칩 2 : 패드
3 : 리이드 프레임 4 : 리이드
5 : 와이어 6 : 시료(검사대상물)
38 : 수직조명수단 40 : 저배율용 결상렌즈
41 : 저배율용 카메라 42 : 고배율용 결상렌즈
44 : 고배율용 카메라 50 : 전동조리개

Claims (1)

  1. 반도체칩의 패드와 리이드프레임의 리이드에 본딩된 와이어를 검사하는 본딩 와이어 검사장치에 있어서 검사대상물의 위쪽에서 조명하는 수직조명수단과, 이 수직조명수단에 의한 반사광을 받아서 검사대상으로부분을 결상시키는 광학적수단과 이 광학적수단에 의해서 결성된 상을 촬영하는 카메라와 상기 수직조명수단의 밑쪽에 배설되어 개구의 직경을 전기적으로 변화시킬 수 있는 전동조리개를 갖춘 것을 특징으로 하는 본딩와이어 검사장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920021558A 1991-12-02 1992-11-17 본딩와이어 검사장치 KR960005091B1 (ko)

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JP91-341833 1991-12-02
JP3341833A JP2969403B2 (ja) 1991-12-02 1991-12-02 ボンデイングワイヤ検査装置

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KR930014867A true KR930014867A (ko) 1993-07-23
KR960005091B1 KR960005091B1 (ko) 1996-04-20

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519496A (en) * 1994-01-07 1996-05-21 Applied Intelligent Systems, Inc. Illumination system and method for generating an image of an object
US5642158A (en) * 1994-05-02 1997-06-24 Cognex Corporation Method and apparatus to detect capillary indentations
JP3298753B2 (ja) * 1994-10-14 2002-07-08 株式会社新川 ワイヤ曲がり検査装置
IT1273968B (it) * 1995-02-24 1997-07-11 Finmeccanica Spa Apparecchiatura per il rilevamento ottico di difetti superficiali in particolare per nastri laminati
WO1997002708A1 (en) * 1995-06-30 1997-01-23 Precision Assembly Systems, Inc. Automated system for placement of components
US6040895A (en) * 1997-10-08 2000-03-21 Siemens Aktiengesellschaft Method and device for controlled illumination of an object for improving identification of an object feature in an image of the object
US6359694B1 (en) 1997-11-10 2002-03-19 Siemens Aktiengesellschaft Method and device for identifying the position of an electrical component or terminals thereof, and equipping head employing same
JPH11219425A (ja) * 1998-01-30 1999-08-10 Lintec Corp 観測装置及び該装置の発光制御方法
DE10128476C2 (de) * 2001-06-12 2003-06-12 Siemens Dematic Ag Optische Sensorvorrichtung zur visuellen Erfassung von Substraten
US7527186B2 (en) * 2001-07-24 2009-05-05 Kulicke And Soffa Industries, Inc. Method and apparatus for mapping a position of a capillary tool tip using a prism
US7523848B2 (en) * 2001-07-24 2009-04-28 Kulicke And Soffa Industries, Inc. Method and apparatus for measuring the size of free air balls on a wire bonder
JP4365292B2 (ja) * 2004-09-02 2009-11-18 株式会社カイジョー ワイヤボンディングにおけるボール圧着厚の測定方法
GB2442152A (en) * 2005-07-08 2008-03-26 Electro Scient Ind Inc Optimizing use and performance of optical systems implemented with telecentric on-axis dark field illumination
US20120128229A1 (en) * 2010-11-23 2012-05-24 Kulicke And Soffa Industries, Inc. Imaging operations for a wire bonding system
SG2013084975A (en) * 2013-11-11 2015-06-29 Saedge Vision Solutions Pte Ltd An apparatus and method for inspecting asemiconductor package
WO2019082558A1 (ja) * 2017-10-26 2019-05-02 株式会社新川 ボンディング装置
WO2021202211A1 (en) * 2020-03-29 2021-10-07 Kulicke And Soffa Industries, Inc. Methods of optimizing clamping of a semiconductor element against a support structure on a wire bonding machine, and related methods
CN112179920B (zh) * 2020-11-29 2021-04-13 惠州高视科技有限公司 一种芯片焊线缺陷的检测方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329014C2 (de) * 1973-06-07 1983-04-28 Agfa-Gevaert Ag, 5090 Leverkusen Blendenanordnung mit mindestens einem Flüssigkristallelement
JPS5740234A (en) * 1980-08-22 1982-03-05 Canon Inc Ttl light measurement
US5059559A (en) * 1987-11-02 1991-10-22 Hitachi, Ltd. Method of aligning and bonding tab inner leads
US5030008A (en) * 1988-10-11 1991-07-09 Kla Instruments, Corporation Method and apparatus for the automated analysis of three-dimensional objects
JPH07111998B2 (ja) * 1989-08-18 1995-11-29 株式会社東芝 ワイヤボンディング検査装置

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US5396334A (en) 1995-03-07
KR960005091B1 (ko) 1996-04-20
JPH05160232A (ja) 1993-06-25

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