KR930011100A - 반도체 바아를 양호한 반도체 원판으로 분할하는 방법 및 장치 - Google Patents

반도체 바아를 양호한 반도체 원판으로 분할하는 방법 및 장치 Download PDF

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Publication number
KR930011100A
KR930011100A KR1019920020001A KR920020001A KR930011100A KR 930011100 A KR930011100 A KR 930011100A KR 1019920020001 A KR1019920020001 A KR 1019920020001A KR 920020001 A KR920020001 A KR 920020001A KR 930011100 A KR930011100 A KR 930011100A
Authority
KR
South Korea
Prior art keywords
bar
grinding wheel
semiconductor
cutting tool
dresser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019920020001A
Other languages
English (en)
Korean (ko)
Inventor
힌젠 후세르트
Original Assignee
칼 게오르 뢰쉬
게엠엔 게오르그 뮐러 뉘른베르그 아.게.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 게오르 뢰쉬, 게엠엔 게오르그 뮐러 뉘른베르그 아.게. filed Critical 칼 게오르 뢰쉬
Publication of KR930011100A publication Critical patent/KR930011100A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/001—Devices or means for dressing or conditioning abrasive surfaces involving the use of electric current
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1019920020001A 1991-11-07 1992-10-29 반도체 바아를 양호한 반도체 원판으로 분할하는 방법 및 장치 Withdrawn KR930011100A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4136566.6 1991-11-07
DE4136566A DE4136566C1 (https=) 1991-11-07 1991-11-07

Publications (1)

Publication Number Publication Date
KR930011100A true KR930011100A (ko) 1993-06-23

Family

ID=6444220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920020001A Withdrawn KR930011100A (ko) 1991-11-07 1992-10-29 반도체 바아를 양호한 반도체 원판으로 분할하는 방법 및 장치

Country Status (4)

Country Link
US (1) US5285597A (https=)
JP (1) JPH05309645A (https=)
KR (1) KR930011100A (https=)
DE (1) DE4136566C1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101010549B1 (ko) * 2007-10-16 2011-01-24 오끼 덴끼 고오교 가부시끼가이샤 자동 거래 장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5816892A (en) * 1997-02-06 1998-10-06 Cobra Machine Tool Co., Inc. Positioning control for combined milling machine and internally positioned grinding wheel
JPH11135474A (ja) * 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体鏡面ウェハおよびその製造方法
US6383056B1 (en) 1999-12-02 2002-05-07 Yin Ming Wang Plane constructed shaft system used in precision polishing and polishing apparatuses
US7018268B2 (en) * 2002-04-09 2006-03-28 Strasbaugh Protection of work piece during surface processing
JP5510779B2 (ja) * 2009-06-15 2014-06-04 Ｎｔｎ株式会社 研削装置
CN103522168A (zh) * 2013-07-26 2014-01-22 浙江工业大学 基于保持架偏心转摆式双平面研磨的圆柱形零件外圆加工装置
CN104191328B (zh) * 2014-08-27 2016-09-21 赵水光 自动传输式锅体磨边系统
CN115922933B (zh) * 2022-12-23 2025-08-19 上海德硅凯氟光电科技有限公司 一种高热膨胀系数软脆类晶体的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184727A (ja) * 1982-04-23 1983-10-28 Disco Abrasive Sys Ltd シリコンウェ−ハの面を研削する方法
US4663890A (en) * 1982-05-18 1987-05-12 Gmn Georg Muller Nurnberg Gmbh Method for machining workpieces of brittle hard material into wafers
JPS61106207A (ja) * 1984-10-31 1986-05-24 株式会社東京精密 ウエハー製造方法並びに装置
DE3613132A1 (de) * 1986-04-18 1987-10-22 Mueller Georg Nuernberg Verfahren zum zerteilen von harten, nichtmetallischen werkstoffen
US4852304A (en) * 1987-10-29 1989-08-01 Tokyo Seimtsu Co., Ltd. Apparatus and method for slicing a wafer
DE3737540C1 (de) * 1987-11-05 1989-06-22 Mueller Georg Nuernberg Verfahren und Maschine zum Herstellen von Ronden mit zumindest einer planen Oberflaeche
DE3804873A1 (de) * 1988-02-17 1989-08-31 Mueller Georg Nuernberg Verfahren und vorrichtung zum zerteilen von halbleiter-barren in halbleiter-ronden mit zumindest einer planen oberflaeche
EP0346280B1 (de) * 1988-06-06 1994-11-09 Ciba-Geigy Ag Dicyanobenzanthronverbindungen
US5111622A (en) * 1989-05-18 1992-05-12 Silicon Technology Corporation Slicing and grinding system for a wafer slicing machine
JPH0767692B2 (ja) * 1989-09-07 1995-07-26 株式会社東京精密 スライシングマシンの切断方法
JP2708249B2 (ja) * 1989-12-15 1998-02-04 株式会社日立製作所 セラミック部材の研削加工方法
US5185956A (en) * 1990-05-18 1993-02-16 Silicon Technology Corporation Wafer slicing and grinding system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101010549B1 (ko) * 2007-10-16 2011-01-24 오끼 덴끼 고오교 가부시끼가이샤 자동 거래 장치

Also Published As

Publication number Publication date
DE4136566C1 (https=) 1993-04-22
JPH05309645A (ja) 1993-11-22
US5285597A (en) 1994-02-15

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000