KR930011099A - 위상 반전 마스크 제조방법 - Google Patents

위상 반전 마스크 제조방법 Download PDF

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Publication number
KR930011099A
KR930011099A KR1019910020350A KR910020350A KR930011099A KR 930011099 A KR930011099 A KR 930011099A KR 1019910020350 A KR1019910020350 A KR 1019910020350A KR 910020350 A KR910020350 A KR 910020350A KR 930011099 A KR930011099 A KR 930011099A
Authority
KR
South Korea
Prior art keywords
layer
phase inversion
light shielding
shielding layer
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019910020350A
Other languages
English (en)
Korean (ko)
Inventor
한오석
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910020350A priority Critical patent/KR930011099A/ko
Priority to TW081108884A priority patent/TW221721B/zh
Priority to DE4238441A priority patent/DE4238441C2/de
Priority to US07/976,020 priority patent/US5322749A/en
Priority to JP32902392A priority patent/JP3292961B2/ja
Publication of KR930011099A publication Critical patent/KR930011099A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019910020350A 1991-11-15 1991-11-15 위상 반전 마스크 제조방법 Ceased KR930011099A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910020350A KR930011099A (ko) 1991-11-15 1991-11-15 위상 반전 마스크 제조방법
TW081108884A TW221721B (enExample) 1991-11-15 1992-11-06
DE4238441A DE4238441C2 (de) 1991-11-15 1992-11-13 Phasenschiebemaske und Verfahren zu deren Herstellung
US07/976,020 US5322749A (en) 1991-11-15 1992-11-13 Phase shift mask and method of making the same
JP32902392A JP3292961B2 (ja) 1991-11-15 1992-11-16 位相反転マスク及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910020350A KR930011099A (ko) 1991-11-15 1991-11-15 위상 반전 마스크 제조방법

Publications (1)

Publication Number Publication Date
KR930011099A true KR930011099A (ko) 1993-06-23

Family

ID=19322893

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020350A Ceased KR930011099A (ko) 1991-11-15 1991-11-15 위상 반전 마스크 제조방법

Country Status (5)

Country Link
US (1) US5322749A (enExample)
JP (1) JP3292961B2 (enExample)
KR (1) KR930011099A (enExample)
DE (1) DE4238441C2 (enExample)
TW (1) TW221721B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045026A (ko) * 1998-12-30 2000-07-15 전주범 드럼식 세탁기의 배수방법
KR100388320B1 (ko) * 1999-06-22 2003-06-25 주식회사 하이닉스반도체 위상반전마스크 형성방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636993A (ja) * 1992-05-21 1994-02-10 Canon Inc 露光装置及び半導体素子の製造方法
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법
TW270219B (enExample) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
KR0152952B1 (ko) * 1995-05-13 1998-10-01 문정환 위상반전 마스크 및 그 제조방법
KR100399444B1 (ko) * 1995-06-30 2004-04-29 주식회사 하이닉스반도체 에지강조형위상반전마스크및그제조방법
KR0167249B1 (ko) * 1995-07-31 1999-01-15 문정환 위상반전마스크 제조방법
KR0179164B1 (ko) * 1995-09-25 1999-04-01 문정환 위상 반전 마스크의 제조방법
KR100195333B1 (ko) * 1996-09-02 1999-06-15 구본준 위상반전마스크 및 그 제조방법
US5958630A (en) * 1997-12-30 1999-09-28 Kabushiki Kaisha Toshiba Phase shifting mask and method of manufacturing the same
US6777137B2 (en) * 2002-07-10 2004-08-17 International Business Machines Corporation EUVL mask structure and method of formation
JP2014116283A (ja) * 2012-11-15 2014-06-26 Sumitomo Heavy Ind Ltd 有機ｅｌ素子の製造方法、及び有機ｅｌ素子
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JPH0359555A (ja) * 1989-07-28 1991-03-14 Fujitsu Ltd 位相シフトマスク
JPH03123353A (ja) * 1989-10-06 1991-05-27 Oki Electric Ind Co Ltd ホトマスク及びその作製方法
JPH03172844A (ja) * 1989-12-01 1991-07-26 Oki Electric Ind Co Ltd シフターパターン付き半導体マスクの作成方法
JPH03211554A (ja) * 1990-01-17 1991-09-17 Fujitsu Ltd 位相シフトマスクの製造方法
JP2647232B2 (ja) * 1990-04-25 1997-08-27 三菱電機株式会社 位相シフトマスク及びその製造方法
JP2892765B2 (ja) * 1990-04-27 1999-05-17 株式会社日立製作所 パターン構造を有する素子の製造方法
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045026A (ko) * 1998-12-30 2000-07-15 전주범 드럼식 세탁기의 배수방법
KR100388320B1 (ko) * 1999-06-22 2003-06-25 주식회사 하이닉스반도체 위상반전마스크 형성방법

Also Published As

Publication number Publication date
JPH06130650A (ja) 1994-05-13
TW221721B (enExample) 1994-03-11
JP3292961B2 (ja) 2002-06-17
DE4238441C2 (de) 2003-09-25
US5322749A (en) 1994-06-21
DE4238441A1 (en) 1993-07-08

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19911115

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Patent event date: 19911115

Comment text: Request for Examination of Application

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Patent event date: 19941031

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19950327

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19941031

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I