KR930010067B1 - 박막형성방법 및 그 장치 - Google Patents

박막형성방법 및 그 장치 Download PDF

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Publication number
KR930010067B1
KR930010067B1 KR1019850002484A KR850002484A KR930010067B1 KR 930010067 B1 KR930010067 B1 KR 930010067B1 KR 1019850002484 A KR1019850002484 A KR 1019850002484A KR 850002484 A KR850002484 A KR 850002484A KR 930010067 B1 KR930010067 B1 KR 930010067B1
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KR
South Korea
Prior art keywords
molecular
thin film
molecular beam
beams
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019850002484A
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English (en)
Korean (ko)
Other versions
KR850007894A (ko
Inventor
시게히고 야마모도
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR850007894A publication Critical patent/KR850007894A/ko
Application granted granted Critical
Publication of KR930010067B1 publication Critical patent/KR930010067B1/ko
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Classifications

    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
KR1019850002484A 1984-04-24 1985-04-13 박막형성방법 및 그 장치 Expired - Fee Related KR930010067B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP81121 1984-04-24
JP59081121A JPS60225422A (ja) 1984-04-24 1984-04-24 薄膜形成方法およびその装置
JP59-81121 1984-04-24

Publications (2)

Publication Number Publication Date
KR850007894A KR850007894A (ko) 1985-12-09
KR930010067B1 true KR930010067B1 (ko) 1993-10-14

Family

ID=13737548

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850002484A Expired - Fee Related KR930010067B1 (ko) 1984-04-24 1985-04-13 박막형성방법 및 그 장치

Country Status (5)

Country Link
US (1) US4639377A (enExample)
EP (1) EP0160479B1 (enExample)
JP (1) JPS60225422A (enExample)
KR (1) KR930010067B1 (enExample)
DE (1) DE3585048D1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578095B1 (fr) * 1985-02-28 1988-04-15 Avitaya Francois D Procede et dispositif de depot par croissance epitaxiale d'un materiau dope
US4800840A (en) * 1986-09-24 1989-01-31 Rockwell International Corporation Method and apparatus for vapor stream discrimination
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
DE4204650C1 (enExample) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5400739A (en) * 1992-10-09 1995-03-28 Texas Instruments Incorporated Method for controlling thin film growth of compound semiconductors using mass spectrometer detectors
US5330610A (en) * 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2341827A (en) * 1944-02-15 Optical unit
US3168418A (en) * 1962-03-27 1965-02-02 Alloyd Electronics Device for monitoring and controlling evaporation rate in vacuum deposition
GB1010456A (en) * 1962-10-02 1965-11-17 G V Planer Ltd Means for measuring and/or controlling the evaporation rate in vacuum evaporation processes
US3347701A (en) * 1963-02-05 1967-10-17 Fujitsu Ltd Method and apparatus for vapor deposition employing an electron beam
DE1521247C3 (de) * 1965-03-10 1975-04-30 Fujitsu Ltd., Communications And Electronics, Tokio Vakuumbedampfungseinrichking mit einem lonenstrommeßfiihler zur Regelung der Verdampfungsgeschwindigkeit
US3419718A (en) * 1965-12-15 1968-12-31 Gulf General Atomic Inc Apparatus for measuring the flow of electrically neutral particles
CH490678A (fr) * 1967-04-21 1970-05-15 Battelle Development Corp Jauge de mesure de la vitesse d'évaporation sous vide
JPS5123950B1 (enExample) * 1970-01-30 1976-07-20
JPS5141546B2 (enExample) * 1972-01-21 1976-11-10
US4024399A (en) * 1975-01-06 1977-05-17 Jersey Nuclear-Avco Isotopes, Inc. Method and apparatus for measuring vapor flow in isotope separation
FR2370320A1 (fr) * 1976-11-05 1978-06-02 Thomson Csf Systeme de regulation de flux moleculaires, et son application aux techniques de co-evaporation
CH651592A5 (de) * 1982-10-26 1985-09-30 Balzers Hochvakuum Dampfquelle fuer vakuumbedampfungsanlagen.

Also Published As

Publication number Publication date
JPH0458684B2 (enExample) 1992-09-18
US4639377A (en) 1987-01-27
JPS60225422A (ja) 1985-11-09
DE3585048D1 (de) 1992-02-13
EP0160479A3 (en) 1988-03-30
EP0160479A2 (en) 1985-11-06
EP0160479B1 (en) 1992-01-02
KR850007894A (ko) 1985-12-09

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