JPS5141546B2 - - Google Patents

Info

Publication number
JPS5141546B2
JPS5141546B2 JP47007612A JP761272A JPS5141546B2 JP S5141546 B2 JPS5141546 B2 JP S5141546B2 JP 47007612 A JP47007612 A JP 47007612A JP 761272 A JP761272 A JP 761272A JP S5141546 B2 JPS5141546 B2 JP S5141546B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47007612A
Other languages
Japanese (ja)
Other versions
JPS4878871A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47007612A priority Critical patent/JPS5141546B2/ja
Priority to US325740A priority patent/US3906889A/en
Publication of JPS4878871A publication Critical patent/JPS4878871A/ja
Publication of JPS5141546B2 publication Critical patent/JPS5141546B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Vapour Deposition (AREA)
JP47007612A 1972-01-21 1972-01-21 Expired JPS5141546B2 (enExample)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47007612A JPS5141546B2 (enExample) 1972-01-21 1972-01-21
US325740A US3906889A (en) 1972-01-21 1973-01-22 Crystal growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47007612A JPS5141546B2 (enExample) 1972-01-21 1972-01-21

Publications (2)

Publication Number Publication Date
JPS4878871A JPS4878871A (enExample) 1973-10-23
JPS5141546B2 true JPS5141546B2 (enExample) 1976-11-10

Family

ID=11670619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47007612A Expired JPS5141546B2 (enExample) 1972-01-21 1972-01-21

Country Status (2)

Country Link
US (1) US3906889A (enExample)
JP (1) JPS5141546B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225422A (ja) * 1984-04-24 1985-11-09 Hitachi Ltd 薄膜形成方法およびその装置
US4855013A (en) * 1984-08-13 1989-08-08 Agency Of Industrial Science And Technology Method for controlling the thickness of a thin crystal film
FR2703077B1 (fr) * 1993-03-24 1995-04-28 Harmand Jean Christophe Dispositif de régulation de flux issus de cellules d'évaporation de matériaux solides, utilisant des vannes asservies à des mesures de pressions partielles.
US6753042B1 (en) * 2000-05-02 2004-06-22 Itac Limited Diamond-like carbon thin film coating process
US8127904B2 (en) * 2008-04-04 2012-03-06 Muska Martin A System and method for tuning the resonance frequency of an energy absorbing device for a structure in response to a disruptive force

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3602709A (en) * 1968-03-14 1971-08-31 Bell & Howell Co Mass analyzer including magnetic field control means
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams

Also Published As

Publication number Publication date
US3906889A (en) 1975-09-23
JPS4878871A (enExample) 1973-10-23

Similar Documents

Publication Publication Date Title
JPS4896137A (enExample)
JPS4914599A (enExample)
JPS4936820A (enExample)
JPS4878871A (enExample)
JPS5641979B2 (enExample)
JPS5125836B2 (enExample)
JPS4890462U (enExample)
JPS4889048A (enExample)
JPS5241855Y2 (enExample)
CH588458A5 (enExample)
CH586759A5 (enExample)
CH606461A5 (enExample)
CH605605A5 (enExample)
CH601428A5 (enExample)
CH599098A5 (enExample)
CH596288A5 (enExample)
CH595372A5 (enExample)
CH594605A5 (enExample)
CH590565A5 (enExample)
CH590308A5 (enExample)
CH590233A5 (enExample)
CH590055A5 (enExample)
CH589715A5 (enExample)
CH589413A5 (enExample)
CH586187A5 (enExample)