GB1010456A - Means for measuring and/or controlling the evaporation rate in vacuum evaporation processes - Google Patents
Means for measuring and/or controlling the evaporation rate in vacuum evaporation processesInfo
- Publication number
- GB1010456A GB1010456A GB3722462A GB3722462A GB1010456A GB 1010456 A GB1010456 A GB 1010456A GB 3722462 A GB3722462 A GB 3722462A GB 3722462 A GB3722462 A GB 3722462A GB 1010456 A GB1010456 A GB 1010456A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vapour
- electrode
- evaporation
- ion electrode
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
<PICT:1010456/C6-C7/1> <PICT:1010456/C6-C7/2> <PICT:1010456/C6-C7/3> In a vapour deposition process using an electron beam emitter to evaporate the source material, the rate of evaporation is controlled by regulating the current through the emitter according to the ionization current resulting from the evaporation, the ionization current being registered by a vapour ion electrode exposed to part of the evaporant stream. A residual ion electrode outside the path of the evaporant stream registers the background ionization current and the electrodes are mounted in an assembly comprising an earthed shielding electrode 1, residual ion electrode 2 and a vapour ion electrode 3 insulated by spacers 4, 5 and 6. A collimator tube 7 passes through electrodes 1 and 2 and shields the residual ion electrode from the evaporant. The electrode assembly is mounted on pillars 10 in a vacuum chamber between the source material and the substrate and an electron beam emitter 25 vaporizes the source material, the vapour material passing through the tube 7 and aperture 18 in the vapour ion electrode 3 which thus acquires a positive charge. As shown in Fg. 4 the difference in the outputs of the vapour ion and residual ion electrodes is amplified at 21 and fed to a controller meter 22 which indicates the rate of evaporation and/or opertes pre-set relays to actuate motor 23 of transformer 24 which controls the current input to the emitter 25. Alternatively (Fig. 5, not shown) the output from 21 may be applied to a saturable reactor which controls the source temperture at constant high tension. Timing mechanisms may also be incorporated in the control gear. An alternative arrangement of the electrode assembly is also described (Fig. 6, not shown).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3722462A GB1010456A (en) | 1962-10-02 | 1962-10-02 | Means for measuring and/or controlling the evaporation rate in vacuum evaporation processes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3722462A GB1010456A (en) | 1962-10-02 | 1962-10-02 | Means for measuring and/or controlling the evaporation rate in vacuum evaporation processes |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1010456A true GB1010456A (en) | 1965-11-17 |
Family
ID=10394775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3722462A Expired GB1010456A (en) | 1962-10-02 | 1962-10-02 | Means for measuring and/or controlling the evaporation rate in vacuum evaporation processes |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1010456A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3467057A (en) * | 1966-07-27 | 1969-09-16 | Hitachi Ltd | Electron beam evaporator |
US4024376A (en) * | 1975-06-13 | 1977-05-17 | Leybold-Heraeus Gmbh & Co. Kg | Device for measuring the evaporation rate in vacuum evaporation processes |
US4408563A (en) * | 1978-08-09 | 1983-10-11 | Leybold-Heraeus Gmbh | Apparatus for regulating the evaporation rate of oxidizable substances in reactive vacuum deposition |
EP0160479A2 (en) * | 1984-04-24 | 1985-11-06 | Hitachi, Ltd. | Method and apparatus for forming a thin film |
US4587134A (en) * | 1984-05-28 | 1986-05-06 | Nisshin Steel Company, Ltd. | Method of rapidly changing deposition amount in a continuous vacuum deposition process |
-
1962
- 1962-10-02 GB GB3722462A patent/GB1010456A/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3467057A (en) * | 1966-07-27 | 1969-09-16 | Hitachi Ltd | Electron beam evaporator |
US4024376A (en) * | 1975-06-13 | 1977-05-17 | Leybold-Heraeus Gmbh & Co. Kg | Device for measuring the evaporation rate in vacuum evaporation processes |
US4408563A (en) * | 1978-08-09 | 1983-10-11 | Leybold-Heraeus Gmbh | Apparatus for regulating the evaporation rate of oxidizable substances in reactive vacuum deposition |
EP0160479A2 (en) * | 1984-04-24 | 1985-11-06 | Hitachi, Ltd. | Method and apparatus for forming a thin film |
EP0160479A3 (en) * | 1984-04-24 | 1988-03-30 | Hitachi, Ltd. | Method and apparatus for forming a thin film |
US4587134A (en) * | 1984-05-28 | 1986-05-06 | Nisshin Steel Company, Ltd. | Method of rapidly changing deposition amount in a continuous vacuum deposition process |
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