GB1026676A - Vacuum deposition apparatus - Google Patents

Vacuum deposition apparatus

Info

Publication number
GB1026676A
GB1026676A GB2201/63A GB220163A GB1026676A GB 1026676 A GB1026676 A GB 1026676A GB 2201/63 A GB2201/63 A GB 2201/63A GB 220163 A GB220163 A GB 220163A GB 1026676 A GB1026676 A GB 1026676A
Authority
GB
United Kingdom
Prior art keywords
stream
difference
crucible
vapour stream
filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2201/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alloyd Electronics Corp
Original Assignee
Alloyd Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alloyd Electronics Corp filed Critical Alloyd Electronics Corp
Publication of GB1026676A publication Critical patent/GB1026676A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J41/00—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas; Discharge tubes for evacuation by diffusion of ions
    • H01J41/02—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas
    • H01J41/04—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas with ionisation by means of thermionic cathodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

In apparatus for the vacuum deposition of thin films of material from a heated crucible 16 on to a substrate 22, the rate of evaporation is monitered by signals obtained by the ionization of part of the vapour stream, the signals preferably being used to control the temperature of the crucible to keep the evaporation rate constant. The stream is passed through one of two ionization chambers 24, 26 through which a beam of electrons is directed from a self accelerating gun 27. Residual gas is ionized in both chambers but in chamber 26 the vapour stream is partly ionized also; the difference in ion currents in collectors 28, 30 is thus due to the vapour stream alone. This difference is compared with a reference at 58 and any error is amplified at 52 to adjust the power supply to a filament 18 forming a cathode connected to a high voltage source 34, the other side of which is connected to the crucible forming an anode which is consequently heated. The electron stream from gun 27 is also stabilized in this case by controlling the power to filament 43 according to the difference between the voltage developed across a resistor 62 by the beam current and a reference 64. <PICT:1026676/C6-C7/1>
GB2201/63A 1962-03-27 1963-01-17 Vacuum deposition apparatus Expired GB1026676A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US182899A US3168418A (en) 1962-03-27 1962-03-27 Device for monitoring and controlling evaporation rate in vacuum deposition

Publications (1)

Publication Number Publication Date
GB1026676A true GB1026676A (en) 1966-04-20

Family

ID=22670533

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2201/63A Expired GB1026676A (en) 1962-03-27 1963-01-17 Vacuum deposition apparatus

Country Status (2)

Country Link
US (1) US3168418A (en)
GB (1) GB1026676A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112626464A (en) * 2020-12-06 2021-04-09 无锡英诺赛思科技有限公司 Preparation device of gallium nitride film

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281265A (en) * 1963-09-17 1966-10-25 United States Steel Corp Method and apparatus for controlling coating thickness by electron beam evaporation
US3406040A (en) * 1964-06-24 1968-10-15 Ibm Vapor deposition method for forming thin polymeric films
US3313914A (en) * 1964-12-31 1967-04-11 Ibm Monitored evaporant source
US3419718A (en) * 1965-12-15 1968-12-31 Gulf General Atomic Inc Apparatus for measuring the flow of electrically neutral particles
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3583361A (en) * 1969-12-18 1971-06-08 Atomic Energy Commission Ion beam deposition system
GB1540064A (en) * 1975-07-08 1979-02-07 Atomic Energy Authority Uk Laser removal of material from workpieces
US4036167A (en) * 1976-01-30 1977-07-19 Inficon Leybold-Heraeus Inc. Apparatus for monitoring vacuum deposition processes
US4191512A (en) * 1977-08-29 1980-03-04 Varian Associates, Inc. Apparatus and method for controlling pressure ratio in high vacuum vapor pumps
JPS60225422A (en) * 1984-04-24 1985-11-09 Hitachi Ltd Forming method of thin film and equipment thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2516704A (en) * 1949-06-11 1950-07-25 Collins Radio Co Vacuum gauge of the ionization producing type
US2972716A (en) * 1955-07-07 1961-02-21 Phillips Petroleum Co Analytical instrument utilizing ionization and selective evaporation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112626464A (en) * 2020-12-06 2021-04-09 无锡英诺赛思科技有限公司 Preparation device of gallium nitride film

Also Published As

Publication number Publication date
US3168418A (en) 1965-02-02

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