KR930009007A - 제어시스템 - Google Patents

제어시스템 Download PDF

Info

Publication number
KR930009007A
KR930009007A KR1019920020040A KR920020040A KR930009007A KR 930009007 A KR930009007 A KR 930009007A KR 1019920020040 A KR1019920020040 A KR 1019920020040A KR 920020040 A KR920020040 A KR 920020040A KR 930009007 A KR930009007 A KR 930009007A
Authority
KR
South Korea
Prior art keywords
wire
bonding
contact surface
ultrasonic energy
supplied
Prior art date
Application number
KR1019920020040A
Other languages
English (en)
Inventor
화라삿트 화아라트
Original Assignee
제이 다블류 랜덜
엠하아트 인코포레이팃드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26299771&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR930009007(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from GB919123047A external-priority patent/GB9123047D0/en
Priority claimed from GB9219029A external-priority patent/GB2270868B/en
Application filed by 제이 다블류 랜덜, 엠하아트 인코포레이팃드 filed Critical 제이 다블류 랜덜
Publication of KR930009007A publication Critical patent/KR930009007A/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/12Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to investigating the properties, e.g. the weldability, of materials
    • B23K31/125Weld quality monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20751Diameter ranges larger or equal to 10 microns less than 20 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20754Diameter ranges larger or equal to 40 microns less than 50 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20755Diameter ranges larger or equal to 50 microns less than 60 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20756Diameter ranges larger or equal to 60 microns less than 70 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20757Diameter ranges larger or equal to 70 microns less than 80 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20758Diameter ranges larger or equal to 80 microns less than 90 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20759Diameter ranges larger or equal to 90 microns less than 100 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/2076Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

전기 또는 전자부품의 접촉표면에 대하여 와이어를 가압하도록 배열되어 초음파변환기(6)에 장착된 본딩공구에 초음파에너지를 공급하고 와이어(8)의 변형을 조정하는 것으로 이루어지는 전기 또는 전자부품의 접촉 표면에 와이어를 접합하기 위한 와이어 본딩공정, 초음파에너지의 레벨과 공급시간과 경우에 따라서 접합력의 크기가 본딩공정중에 폐루프시스템에서 와이어의 변형에 따라 연속적으로 제어된다.

Description

제어시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 25미크론의 두께를 갖는 알루미늄 본딩와이어에 대하여 와이어변형과 일정 접합중량에 따라 제어된 초음파에너지를 사용한 시간에 대하여 와이어 변형을 나타내는 그래프.
제3도는 250미크론의 두께를 갖는 알루미늄 와이어에 대하여 와이어 변형과 일정 접합중량에 따라 제어된 초음파 에너지를 사용한 시간에 대한 와이어 변형을 나타내는 그래프.
제4도는 25미크론의 두께를 갖는 알루미늄 본딩와이어에 대하여 와이어 변형에 따라 제어된 초음파에너지와 접합중량을 사용한 시간에 대한 와이어변형을 나타내는 그래프.
제5도는 250미크론의 두께를 갖는 알루미늄 와이어에 대하여 시간에 대한 와이어변형을 초음파에너지와 접합중량을 사용한 시간에 대한 와이어변형을 나타내는 그래프.
제6도는 와이어본딩 공정중의 세개의 단계를 나타내는 그래프.
제7도는 자동와이어 본딩장치의 두가지 다른 구체예의 블록다이아그램.

Claims (8)

  1. 전기 또는 전자부품(10)의 접촉표면에 와이어(8)를 접합하기 위하여 와이어를 전기 또는 전자부품의 접촉표면에 대하여 가압하도록 배열되어 초음파 변환기(6)에 장착된 접합공구(2)에 초음파에너지를 공급하고 와이어(8)의 변형을 조정하는 것으로 이루어지는 와이어 본딩공정을 수행하기 위한 방법에 있어서, 초음파에너지의 공급레벨과 시간이 본딩공정중에 와이어(8)의 변형에 따라서 연속적으로 제어되는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 와이어(8)은 100미크론 이하의 두께를 가지며, 상기 공정은 2단계 공정으로 실시되는데 제1단계에서는 와이어(8)의 표면과 그 와이어표면이 접합되는 접촉표면(10)을 청소하기 위하여 초음파에너지가 공급되며, 제2단계에서는 와이어(8)과 접촉표면(10) 사이에 웰드를 형성하기 위하여 초음파에너지가 공급되는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 와이어(8)은 100미크론 이하의 두께를 가지며, 상기 공정은 3단계공정으로 실시되는데 제1단계에서는 와이어(8)의 포면과 그 와이어 표면이 접합되는 접촉표면(10)을 청소하기 위하여 초음파에너지가 공급되며, 제2단계에서는 와이어(8)과 접촉표면(10) 사이에 웰드를 형성하기 위하여 초음파에너지가 공급되며, 제3단계에서는 와이어(8)과 접촉표면사이의 접합이 고온에서 템퍼링되는 것을 특징으로 하는 방법.
  4. 전기 또는 전자부품(10)의 접촉표면에 와이어(8)를 접합하기 위하여 와이어를 전기 또는 전자부품의 접촉표면에 대하여 가압하도록 배열되어 초음파 변환기(6)에 장착된 접합공구(2)에 초음파에너지를 공급하고 와이어(8)의 변형을 조정하는 것으로 이루어지는 와이어 본딩공정을 수행하기 위한 방법에 있어서, 초음파에너지의 공급레벨과 시간과 접합력의 크기가 본딩공정중에 와이어(8)의 변형에 따라서 연속적으로 제어되는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 상기 와이어(8)은 100미크론 이하의 두께를 가지며, 상기 공정은 2단계 공정으로 실시되는데 제1단계에서는 와이어(8)의 표면과 그 와이어 표면이 접합되는 접촉표면(10)을 청소하기 위하여 초음파에너지가 공급되며, 제2단계에서는 와이어(8)과 접촉표면(10) 사이에 웰드를 형성하기 위하여 초음파에너지가 공급되는 것을 특징으로 하는 방법.
  6. 제4항에 있어서, 상기 와이어(8)은 100미크론 이하의 두께를 가지며, 상기 공정은 3단계공정으로 실시되는데 제1단계에서는 와이어(8)의 표면과 그 와이어 표면이 접합되는 접촉표면(10)을 청소하기 위하여 초음파에너지가 공급되며, 제2단계에서는 와이어(8)과 접촉표면(10) 사이에 웰드를 형성하기 위하여 초음파에너지가 공급되며, 제3단계에서는 와이어(8)과 접촉표면 사이의 접합이 고온에서 템퍼링하는 것을 특징으로 하는 방법.
  7. 초음파 변환기(6)에 장착된 본딩공구(2)와, 기계의 작동중에 적절한 와이어공급부로 부터 당겨지는 알루미늄와이어(8)을 전기 또는 전자부품(10)의 접촉표면에 대하여 가압하도록 배열된 상기 본딩공구(2)의 본딩팁과 본딩공정중에 본딩웨지의 위치의 변화를 결정하기 위한 센서(12)로 이루어진 본딩헤드로 구성되는 자동와이어 본딩장치에 있어서, 상기 자동와이어 본딩장치는 그밖에도 본딩공정중에 웨지(2)의 위치변화를 결정하기 위한 센서(12)의 출력에 따라 초음파 변환기(6)에 공급되는 에너지와 접합력의 크기를 제어하기 위한 수단(706)으로 구성되는 것을 특징으로 하는 자동와이어 본딩장치.
  8. 초음파 변환기(6)에 장착된 본딩공구(2)와, 기계의 작동중에 적절한 와이어공급부로 부터 당겨지는 알루미늄와이어(8)을 전기 또는 전자부품(10)의 접촉표면에 대하여 가압하도록 배열된 상기 본딩공구(2)의 본딩팁과 본딩공정중에 본딩웨지의 위치의 변화를 결정하기 위한 센서(12)로 이루어진 본딩헤드로 구성되는 자동와이어 본딩장치에 있어서, 상기 자동와이어 본딩장치는 그밖에도 본딩공정중에 웨지(2)의 위치변화를 결정하기 위한 센서(12)의 출력에 따라 초음파 변환기(6)에 공급되는 에너지와 접합력의 크기를 제어하기 위한 수단(706)으로 구성되는 것을 특징으로 하는 자동와이어 본딩장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020040A 1991-10-30 1992-10-29 제어시스템 KR930009007A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB9123047.4 1991-10-30
GB919123047A GB9123047D0 (en) 1991-10-30 1991-10-30 Control system
GB9219029.7 1992-09-08
GB9219029A GB2270868B (en) 1992-09-08 1992-09-08 Control system

Publications (1)

Publication Number Publication Date
KR930009007A true KR930009007A (ko) 1993-05-22

Family

ID=26299771

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920020040A KR930009007A (ko) 1991-10-30 1992-10-29 제어시스템

Country Status (6)

Country Link
US (1) US5314105A (ko)
EP (1) EP0540189B1 (ko)
JP (1) JP3276421B2 (ko)
KR (1) KR930009007A (ko)
AT (1) ATE147672T1 (ko)
DE (1) DE69216761T2 (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595330A (en) * 1994-08-24 1997-01-21 Verity Instruments, Inc. Power supply
JP3207685B2 (ja) * 1994-09-27 2001-09-10 東芝マイクロエレクトロニクス株式会社 半導体装置の組み立て方法とその装置
DE19512820B4 (de) * 1995-04-05 2005-11-03 Branson Ultraschall Niederlassung Der Emerson Technologies Gmbh & Co Verfahren und Vorrichtung zum Einstellen der Arbeitsfrequenz eines Orbitalvibrationsschweißsystems
US5824998A (en) * 1995-12-20 1998-10-20 Pulsar Welding Ltd. Joining or welding of metal objects by a pulsed magnetic force
JPH1027996A (ja) * 1996-07-10 1998-01-27 Matsushita Electric Ind Co Ltd 電子部品装着装置
US5894981A (en) * 1996-11-27 1999-04-20 Orthodyne Electronics Corporation Integrated pull tester with an ultrasonic wire bonder
EP0857535B1 (en) * 1997-02-06 2003-06-25 F & K Delvotec Bondtechnik GmbH Bonding head for a wire bonding machine
EP0864392B1 (en) * 1997-03-13 2001-08-16 F & K Delvotec Bondtechnik GmbH Bonding head
WO1999019107A1 (de) * 1997-10-13 1999-04-22 Hesse & Knipps Gmbh Verfahren zur qualitätskontrolle
JPH11330134A (ja) * 1998-05-12 1999-11-30 Hitachi Ltd ワイヤボンディング方法およびその装置並びに半導体装置
US6237833B1 (en) * 1998-06-15 2001-05-29 Rohm Co., Ltd. Method of checking wirebond condition
US6190497B1 (en) 1999-04-23 2001-02-20 The Hong Kong Polytechnic University Ultrasonic transducer
US6206275B1 (en) 1999-10-13 2001-03-27 F & K Delvotec Bondtechnik Gmbh Deep access, close proximity, fine pitch bonding of large wire
US6425514B1 (en) 1999-11-10 2002-07-30 Asm Technology Singapore Pte Ltd Force sensing apparatus
US6286747B1 (en) 2000-03-24 2001-09-11 Hong Kong Polytechnic University Ultrasonic transducer
DE10110048A1 (de) * 2001-03-02 2002-09-05 Bosch Gmbh Robert Verfahren zum Prüfen von durch Ultraschall-Drahtbonden hergestellten Verbindungen
JP4202617B2 (ja) 2001-03-16 2008-12-24 矢崎総業株式会社 被覆電線の超音波接合方法およびその方法を用いた超音波接合装置
US6644533B2 (en) 2001-07-03 2003-11-11 Asm Technology Singapore Pte. Ltd. Force sensing apparatus
ATE338603T1 (de) 2001-11-07 2006-09-15 F & K Delvotec Bondtech Gmbh Prüfverfahren für bondverbindungen und drahtbonder
KR20030066344A (ko) 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 와이어본더로 접합시에 최적의 접합 파라미터들을결정하기 위한 방법
EP1343201A1 (de) 2002-03-08 2003-09-10 F & K Delvotec Bondtechnik GmbH "Verfahren und Anordnung zur Herstellung und Qualitätsprüfung einer Drahtbondverbindung"
DE102004022509A1 (de) * 2004-01-07 2005-08-25 Stapla Ultraschall-Technik Gmbh Verfahren zum Abquetschen und Abdichten eines Rohres
DE502004005212D1 (de) * 2004-08-11 2007-11-22 F & K Delvotec Bondtech Gmbh Drahtbonder mit einer Kamera, einer Bildverarbeitungseinrichtung, Speichermittel und Vergleichermittel und Verfahren zum Betrieb eines solchen
US20060163315A1 (en) 2005-01-27 2006-07-27 Delsman Mark A Ribbon bonding tool and process
DE102005012992B4 (de) * 2005-03-21 2014-01-02 Infineon Technologies Ag Verfahren, Bondeinrichtung und System zum Bonden eines Halbleiterelementes
KR101210006B1 (ko) * 2005-06-13 2012-12-07 파나소닉 주식회사 반도체 소자 접합 장치 및 이를 이용한 반도체 소자 접합방법
US7845542B2 (en) * 2005-09-22 2010-12-07 Palomar Technologies, Inc. Monitoring deformation and time to logically constrain a bonding process
DE102006020417B4 (de) * 2006-04-26 2008-10-02 Herrmann Ultraschalltechnik Gmbh & Co. Kg Vorrichtung zum Bearbeiten von Werkstücken mittels Ultraschall
US7612773B2 (en) 2006-05-22 2009-11-03 Magnin Paul A Apparatus and method for rendering for display forward-looking image data
JP4679454B2 (ja) * 2006-07-13 2011-04-27 株式会社新川 ワイヤボンディング装置
JP2010500153A (ja) 2006-08-14 2010-01-07 ノベリス・インコーポレーテッド 画像化装置、画像化システム、および画像化の方法
EP1897648B1 (en) 2006-09-05 2010-06-30 Technische Universität Berlin Method and device for controlling the generation of ultrasonic wire bonds
CN102509708B (zh) * 2007-05-16 2014-09-24 库利克和索夫工业公司 金属线接合方法和接合力校准
DE102007054626A1 (de) 2007-11-12 2009-05-14 Hesse & Knipps Gmbh Verfahren und Vorrichtung zum Ultraschallbonden
US8875580B2 (en) * 2011-12-13 2014-11-04 The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Adminstration Method and apparatus to detect wire pathologies near crimped connector
JP5899907B2 (ja) * 2011-12-26 2016-04-06 富士電機株式会社 ワイヤボンディング用のウェッジツール、ボンディング装置、ワイヤボンディング方法、および半導体装置の製造方法
CN103367186B (zh) * 2012-03-28 2015-12-02 西安永电电气有限责任公司 Igbt芯片键合方法
DE102012106491A1 (de) * 2012-07-18 2014-01-23 Herrmann Ultraschalltechnik Gmbh & Co. Kg Verfahren zur Steuerung eines Ultraschallbearbeitungsprozesses
DE102017101736A1 (de) * 2017-01-30 2018-08-02 F&K Delvotec Bondtechnik Gmbh Verfahren zur Herstellung von Drahtbondverbindungen und Anordnung zur Durchführung des Verfahrens
KR102242248B1 (ko) * 2017-05-02 2021-04-20 주식회사 엘지화학 이차전지의 용접 검사장치 및 검사방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047657A (en) * 1976-11-01 1977-09-13 Branson Ultrasonics Corporation Method and apparatus for joining metal workpieces using high frequency vibratory energy
US4606490A (en) * 1982-08-24 1986-08-19 Asm Assembly Automation Limited Apparatus and method for automatic evaluation of a bond created by an ultrasonic transducer
JPS5950536A (ja) * 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
US4555052A (en) * 1983-02-28 1985-11-26 Fairchild Camera & Instrument Corporation Lead wire bond attempt detection
US4496095A (en) * 1983-04-12 1985-01-29 Fairchild Industries, Inc. Progressive ultrasonic welding system
US4696425A (en) * 1984-07-17 1987-09-29 Texas Instruments Incorporated Programmable ultrasonic power supply
DE3667930D1 (de) * 1985-07-12 1990-02-08 Siemens Ag Verfahren zum regeln des prozessverlaufes und zur qualitaetskontrolle beim ultraschallschweissen von werkstuecken.
JPS62150838A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 検出方法および装置
US4824005A (en) * 1986-08-13 1989-04-25 Orthodyne Electronics Corporation Dual mode ultrasonic generator in a wire bonding apparatus
DE3701652A1 (de) * 1987-01-21 1988-08-04 Siemens Ag Ueberwachung von bondparametern waehrend des bondvorganges
JP2558673B2 (ja) * 1987-01-29 1996-11-27 株式会社東芝 ワイヤボンデイング装置
US4808948A (en) * 1987-09-28 1989-02-28 Kulicke And Soffa Indusries, Inc. Automatic tuning system for ultrasonic generators
GB8826488D0 (en) * 1988-11-11 1988-12-14 Emhart Deutschland Quality control for wire bonding
JP2736914B2 (ja) * 1989-03-06 1998-04-08 株式会社新川 ワイヤボンデイング方法
JP2708222B2 (ja) * 1989-03-31 1998-02-04 株式会社東芝 ボンディング装置
US5192015A (en) * 1991-11-20 1993-03-09 Santa Barbara Research Center Method for wire bonding
US5213249A (en) * 1992-05-29 1993-05-25 International Business Machines Corporation Ultrasonic adhesion/dehesion monitoring apparatus with power feedback measuring means

Also Published As

Publication number Publication date
JPH05218147A (ja) 1993-08-27
US5314105A (en) 1994-05-24
EP0540189A2 (en) 1993-05-05
EP0540189A3 (en) 1993-08-18
EP0540189B1 (en) 1997-01-15
DE69216761T2 (de) 1997-07-03
DE69216761D1 (de) 1997-02-27
JP3276421B2 (ja) 2002-04-22
ATE147672T1 (de) 1997-02-15

Similar Documents

Publication Publication Date Title
KR930009007A (ko) 제어시스템
US3784079A (en) Ultrasonic bond control apparatus
KR960700125A (ko) 속응 용접헤드
JPS5950536A (ja) ワイヤボンデイング装置
DE68902904D1 (de) Qualitaetskontrolle beim drahtbinden.
EP1897648B1 (en) Method and device for controlling the generation of ultrasonic wire bonds
US6357650B1 (en) Method of wire-bonding between pad on semiconductor chip and pad on circuit board on which the semiconductor chip is mounted
US5360155A (en) Wire bonding apparatus
US5078312A (en) Wire bonding method
JP2003273152A (ja) ボンドワイヤ結合の生成と品質検査のための方法並びに装置
DE69119574D1 (de) Bondkopf
GB2270868A (en) Wire bonding control system.
JPH03246953A (ja) フェイスダウンボンディング装置
JP3260899B2 (ja) ワイヤボンディング装置
JP2003258021A (ja) ワイヤボンディング装置
JP2877771B2 (ja) ワイヤボンディング装置
JPH0732174B2 (ja) 超音波ワイヤボンディング方法および装置
US20220194014A1 (en) Method for producing an electrically conductive connection
JP2981951B2 (ja) ワイヤボンデイング装置
JPH02130844A (ja) ワイヤボンディング装置のクランパ
JP6636567B2 (ja) チップ実装装置
JP3399679B2 (ja) ワイヤボンディング装置およびワイヤボンディング方法
JPH0745646A (ja) はんだ塗布装置
JPS6167927A (ja) ワイヤボンディング装置及びワイヤボンディング方法
JPS56158434A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid