KR930000524A - 1,3-디실라시클로부탄 유도체 및 그 제조방법 - Google Patents
1,3-디실라시클로부탄 유도체 및 그 제조방법 Download PDFInfo
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- KR930000524A KR930000524A KR1019910009858A KR910009858A KR930000524A KR 930000524 A KR930000524 A KR 930000524A KR 1019910009858 A KR1019910009858 A KR 1019910009858A KR 910009858 A KR910009858 A KR 910009858A KR 930000524 A KR930000524 A KR 930000524A
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (9)
- 일반식(I)로 표시되는 신규한 1, 3-디실라시클로부탄 유도체상기식에서 R1이 메틸 R2가 메톡시 R3이 메톡시 R4가 메틸의 경우 또는 R1이 메톡시 R2가 메톡시 R3가 메톡시 R4가 메틸의 경우 또는 R1이 메톡시 R2가 메톡시 R3가 메톡시 R4가 메톡시의 경우 또는 R1이 메톡시 R2가 클로로 R3가 클로로 R4가 메틸의 경우 또는 R1이 메톡시 R2가 클로로 R3가 클로로 R4가 메톡시의 경우 또는 R1이 에톡시 R2가 클로로 R3가 클로로 R4가 에톡시기를 표시한다.
- 일반식(II)의 일반식(I)의 1, 3-디실라시클로부탄의 제조방법.일반식(I)에 있어서 R1, R2, R3및 R4는 같거나 서로 다르며, 각각 메틸, 페틸, 메톡시, 에톡시 혹은 클로로기를 표시하며 일반식(II)에 있어서, R1, R2및 R3는 같거나 서로 다르며, 각각 메틸, 메톡시, 에톡시, 혹은 클로로기를 표시하며 R4은 메틸, 페닐, 메톡시, 에톡시 혹은 클로로기를 표시하고 R5는 메틸 혹은 에틸기를 표시한다.
- 제 2 항에 있어서, 반응입력을 상압 내지 10-3torr에서 반응시키는 것을 특징으로 하는 일반식(I)의 1, 3-디실라시클로부탄의 제조방법.
- 일반식(II)로 표시되는 신규한 알콕시트리실라알칸 유도체상기 식에서 R1이 메틸 R2가 메틸 R3가 메틸 R4가 페닐 R5가 메틸 또는 R1이 메틸 R2가 메틸 R3가 메틸 R4가 메틸 R5가 메틸 또는 R1이 메틸 R2가 메틸 R3가 메틸 R4가 메톡시 R5가 메틸 또는 R1이 메톡시 R2가 메틸 R3가 메틸 R4가 메톡시 R5가 메틸 또는 R1가 메톡시 R2가 메톡시 R3가 메틸 R4가 메톡시 R5가 메틸 또는 R1이 메톡시 R2가 메톡시 R3가 메톡시 R4가 메톡시 R5가 메틸 또는 R1이 메틸 R2가 메틸 R2가 메틸 R4가 클로로 R5가 메틸 또는 R1이 클로로 R2가 메틸 R3가 메틸 R4가 클로로 R5가 메틸 또는 R1이 메톡시 R2가 클로로 R3가 메틸 R4가 클로로 R5가 메틸 또는 R1이 메톡시 R2가 메톡시 R3가 클로로 R4가 클로로 R5가 메틸 또는 R1이 에톡시 R2가 에톡시 R3기 클로로 R4가 클로로 R5가 에틸기를 표시한다.
- 일반식(IV)의 클로로트리실라알칸 또는 일반식(V)의 트리실라알칸을 알코올 또는 나트륨알콕사이드와 용매의 끓는점에서 반응시키는 것을 특징으로 하는 일반식(II)의 알콕시크라실라알칸의 제조방법.일반식(II)에 있어서, R1, R2및 R3는 같거나 서로 다르며 각각 메틸, 메톡시 혹은 클로로기를 표시하며 R4는 메틸, 페틸, 메톡시, 에톡시 혹은 클로로기를 표시하고 R5는 메틸 또는 에틸기를 표시한다. 일반식 (IV) 및 (V)에 있어서 R1, R2, R3는 각각 메틸 혹은 클로로기를 표시하며 R은 메틸 또는 페닐기를 표시한다.
- 제 5 항에 있어서, 나트륨 알콕사이드로 나트륨 메톡사이드 또는 나트륨에톡사이드 중에서 선택하여 반응시키는 것을 특징으로 하는 일반식(II)의 알콕시트리실라알칸의 제조방법.
- 제 5 항에 있어서, 알코올로서 메탄올 또는 에탄올 중에서 선택하여 반응시키는 것을 특징으로 하는 일반식(II)의 알콕시트리실라알칸의 제조방법.
- 일반식(IV)의 클로로트리실라알칸을 그리냐르시약과 반응시켜 일반식(V)의 트리실라알칸을 제조하는 방법.일반식(IV) 및 (V)에 있어서, R1, R2및 R3는 각각 메틸 혹은 클로로기를 표시하며 R은 메틸 또는 페닐기를 표시한다.
- 제 8 항에 있어서, 그리냐르시약으로 메틸마그네슘 클로라이드 또는 페닐마그네슘 클로라이드 중에서 선택하에 반응시키는 것을 특징으로 하는 일반식(V)의 트리실라알칸의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009858A KR940007414B1 (ko) | 1991-06-14 | 1991-06-14 | 1,3-디실라시클로부탄 유도체 및 그 제조방법 |
US07/897,470 US5302734A (en) | 1991-06-14 | 1992-06-11 | 1,3-disilacyclobutanes and the method for producing thereof |
JP4177778A JPH0768248B2 (ja) | 1991-06-14 | 1992-06-12 | 1,3−ジシラシクロブタンの製造方法 |
FR9207205A FR2678620B1 (fr) | 1991-06-14 | 1992-06-15 | Nouveaux 1,3-disilacyclobutanes et leur procede de fabrication. |
DE4219375A DE4219375C2 (de) | 1991-06-14 | 1992-06-15 | Verfahren zur Herstellung von 1,3-Disilacyclobutanen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019910009858A KR940007414B1 (ko) | 1991-06-14 | 1991-06-14 | 1,3-디실라시클로부탄 유도체 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR930000524A true KR930000524A (ko) | 1993-01-15 |
KR940007414B1 KR940007414B1 (ko) | 1994-08-18 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019910009858A KR940007414B1 (ko) | 1991-06-14 | 1991-06-14 | 1,3-디실라시클로부탄 유도체 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5302734A (ko) |
JP (1) | JPH0768248B2 (ko) |
KR (1) | KR940007414B1 (ko) |
DE (1) | DE4219375C2 (ko) |
FR (1) | FR2678620B1 (ko) |
Cited By (4)
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US6631110B1 (en) | 1998-07-23 | 2003-10-07 | Samsung Electronics Co., Ltd | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
KR100582212B1 (ko) * | 2004-03-09 | 2006-05-23 | 주식회사 파라다이스산업 | 스프링클러 헤드 |
US7158461B1 (en) | 1997-12-30 | 2007-01-02 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US8305857B2 (en) | 1997-12-30 | 2012-11-06 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
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KR950011359B1 (ko) * | 1993-02-18 | 1995-10-02 | 한국과학기술연구원 | I-아릴-i-[알파-(트리아졸릴)알킬]-i-실라시클로알칸 및 이들의 제조방법 |
US5868961A (en) * | 1993-06-28 | 1999-02-09 | Shin-Etsu Chemical Co., Ltd. | Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it |
KR0141464B1 (ko) * | 1993-12-01 | 1998-07-01 | 김은영 | 알릴알킬실란 화합물 및 그의 제조방법 |
KR970010593B1 (ko) * | 1993-12-01 | 1997-06-28 | 한국과학기술연구원 | 2-아릴프로필알킬폴리실록산 형태의 실리콘 오일 및 그의 제조방법 |
KR970010592B1 (ko) * | 1993-12-01 | 1997-06-28 | 한국과학기술연구원 | 2-아릴프로필히드로겐폴리실록산 형태의 실리콘 오일 및 그의 제조방법 |
KR0134564B1 (ko) * | 1993-12-07 | 1998-04-20 | 김은영 | 알릴알킬실록산과 디오르가노실록산 공중합 형태의 실리콘 오일 및 그 제조 방법 |
KR100232044B1 (ko) * | 1993-12-24 | 1999-12-01 | 카나가와 치히로 | 실라시클로헥산화합물, 그 제조방법 및 이것을 함유하는 액정조성물 |
DE69509935T2 (de) * | 1994-02-04 | 2000-01-20 | Shinetsu Chemical Co | Eine Silacyclohexanverbindung, deren Herstellung und diese enthaltende Flüssigkristallzusammensetzungen |
US5527938A (en) * | 1994-07-19 | 1996-06-18 | Korea Institute Of Science And Technology | (2-arylpropyl)silanes and preparation methods thereof |
US5608094A (en) * | 1995-10-04 | 1997-03-04 | Dow Corning Corporation | Benzosilacyclobutenes and methods of making |
US6545492B1 (en) * | 1999-09-20 | 2003-04-08 | Europaisches Laboratorium Fur Molekularbiologie (Embl) | Multiple local probe measuring device and method |
KR100451044B1 (ko) * | 2001-06-07 | 2004-10-02 | 주식회사 엘지화학 | 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법 |
US6830860B2 (en) * | 2003-01-22 | 2004-12-14 | Xerox Corporation | Toner compositions and processes thereof |
KR20050024721A (ko) * | 2003-09-01 | 2005-03-11 | 삼성전자주식회사 | 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
JP5532434B2 (ja) * | 2008-03-07 | 2014-06-25 | 独立行政法人産業技術総合研究所 | 有機無機複合材料およびその利用 |
KR100928942B1 (ko) * | 2008-05-26 | 2009-11-30 | 제이에스아이실리콘주식회사 | 직선형이나 고리형의 트리실라알칸의 제조방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2850514A (en) * | 1955-10-25 | 1958-09-02 | Du Pont | Organometalloids |
US3178392A (en) * | 1962-04-09 | 1965-04-13 | Rohm & Haas | Heterocyclic and linear siliconmethylene and polysiloxane compounds containing siliconmethylene units and their preparation |
GB1023797A (en) | 1964-02-14 | 1966-03-23 | Ici Ltd | New and improved process of preparing organosilicon polymers |
SU810701A1 (ru) * | 1978-08-30 | 1981-03-07 | Институт Нефтехимического Синтезаим.A.B.Топчиева Ah Cccp | 1,1,2,2-Тетраметил-1,2-дисилацикло-буТАН B КАчЕСТВЕ MOHOMEPA дл СиНТЕзАлиНЕйНОгО КРиСТАлличЕСКОгО пОлиМЕРАС чЕРЕдующиМиС диМЕТилЕНОВыМи иМЕТилзАМЕщЕННыМи диСилЕНОВыМи зВЕНь МиВ ОСНОВНОй цЕпи и СпОСОб ЕгО пОлу-чЕНи |
JPH0791308B2 (ja) * | 1989-06-20 | 1995-10-04 | 信越化学工業株式会社 | トリアルキルシリルメチル基含有シラン化合物 |
-
1991
- 1991-06-14 KR KR1019910009858A patent/KR940007414B1/ko not_active IP Right Cessation
-
1992
- 1992-06-11 US US07/897,470 patent/US5302734A/en not_active Expired - Fee Related
- 1992-06-12 JP JP4177778A patent/JPH0768248B2/ja not_active Expired - Lifetime
- 1992-06-15 DE DE4219375A patent/DE4219375C2/de not_active Expired - Fee Related
- 1992-06-15 FR FR9207205A patent/FR2678620B1/fr not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7158461B1 (en) | 1997-12-30 | 2007-01-02 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US8305857B2 (en) | 1997-12-30 | 2012-11-06 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US6631110B1 (en) | 1998-07-23 | 2003-10-07 | Samsung Electronics Co., Ltd | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US8315145B2 (en) | 1998-07-23 | 2012-11-20 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US8315146B2 (en) | 1998-07-23 | 2012-11-20 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
US8315138B2 (en) | 1998-07-23 | 2012-11-20 | Samsung Electronics Co., Ltd. | Adaptive writing method for high-density optical recording apparatus and circuit thereof |
KR100582212B1 (ko) * | 2004-03-09 | 2006-05-23 | 주식회사 파라다이스산업 | 스프링클러 헤드 |
Also Published As
Publication number | Publication date |
---|---|
DE4219375C2 (de) | 1994-10-13 |
JPH0768248B2 (ja) | 1995-07-26 |
US5302734A (en) | 1994-04-12 |
JPH05202069A (ja) | 1993-08-10 |
KR940007414B1 (ko) | 1994-08-18 |
FR2678620A1 (fr) | 1993-01-08 |
FR2678620B1 (fr) | 1995-11-03 |
DE4219375A1 (de) | 1992-12-17 |
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