KR920702560A - 개량된 열안정성을 갖는 광전지 - Google Patents

개량된 열안정성을 갖는 광전지

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Publication number
KR920702560A
KR920702560A KR1019920701140A KR920701140A KR920702560A KR 920702560 A KR920702560 A KR 920702560A KR 1019920701140 A KR1019920701140 A KR 1019920701140A KR 920701140 A KR920701140 A KR 920701140A KR 920702560 A KR920702560 A KR 920702560A
Authority
KR
South Korea
Prior art keywords
silver
tin
solder
contact
wire
Prior art date
Application number
KR1019920701140A
Other languages
English (en)
Other versions
KR970007133B1 (ko
Inventor
씨 곤시오라브스키 로날드
티 보렌스타인 제프리
제이 카르다우스카스 마이클
Original Assignee
버나드 엠 길레스피
모빌 쏠라 에너지 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 버나드 엠 길레스피, 모빌 쏠라 에너지 코포레이션 filed Critical 버나드 엠 길레스피
Publication of KR920702560A publication Critical patent/KR920702560A/ko
Application granted granted Critical
Publication of KR970007133B1 publication Critical patent/KR970007133B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

개량된 열안정성을 갖는 광전지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 전후면과 이전후면상의 전기-전도성 후막은 접점을 갖는 실리콘 기재, 와이어 수단, 이 와이어수단을 상기 은접점중 하나에 접합시키는 약 96% 주석/4%은 내지 98% 주석/2% 은으로된 주석과 은 땝납을 갖는 광전지로 조합하여 이루어짐을 특징으로 하는 장치.
  2. 제1항에 있어서, 납땜을 사용하여 상기 와이어수단을 상기 최소한 하나의 은 접점에 접합 시킬때 이 땜납이 페이스트 형태이고, 이 페이스트-상화성 융제를 함유함을 특징으로 하는 장치.
  3. 실리콘 기재, 은을 함유하는 최소한 하나의 전기 접점과 약 96% 주석/2% 은으로된 땜납 페이스트로 상기 접점에 접합시킨 외이어로 이루어짐을 특징으로 하는 광전지.
  4. 제3항에 있어서, 상기 은접점이 프릿을 함유함을 특징으로 하는 광전지.
  5. 제3항에 있어서, 상기 땜납을 신용하여 상기 와이어를 상기 전기 접점에 접합시킬 때 상기 땜납이 융제를 함유하는 페이스트 형태임을 특징으로 하는 광전지.
  6. 전지상의 후막은 접점에 접합된 와이어 수단에 의하여 전기적으로 연결되는 다수의 실리콘 광전지에 있어서, 주석과 은 땜납을 페이스트를 사용하여 상기 와이어 수단을 상기 접점에 접합시킴을 특징으로 하는 상기 광전지.
  7. 제6항에 있어서, 상기 땜납 페이스트가 약 96% 주석/4% 은 내지 약 98% 주석/2% 은으로 이루어짐을 특징으로 하는 광전지.
  8. (a) 은-후막으로 실리콘 기재의 일부를 피복하여 최소한 하나의 전기 접점을 성시키고; (b) 주위 온도에서 상기 최소한 하나의 전기 접점에 주석과 은 땜납 페이스트를 사용하고, (c) 상기 땜납 페이스트와 전기 전도성 와이어를 접촉시키고; (d) 상기 땜납 페이스트의 주석과 은 성분이 상기 와이어와 전기 접점 사이에서 접합체를 형성하는 데 충분한 시간과 온도에서 상기 땜납 페이스트를 가열함을 특징으로 하는 방법에 의하여 제조하는 실리콘 광전지.
  9. 제8항에 있어서, 상기 땜납 페이스타가 약 96% 주석/4% 은 내지 약 98% 주석/2% 은으로 이루어짐을 특징으로 하는 광전지.
  10. 제9항에 있어서, 상기 땜납 페이스트가 상황성 융제를 더 함유함을 특징으로 하는 광전지.
  11. (a) 은 막으로 상기 전지의 실리콘 기재의 최소한 한 면을 피복하여 각 기재에 최소한 하나의 은-함유 전지접점을 형성시키고; (b) 주위 온도에서 상기 최소한 하나의 은-함유 전기 접점에 주석과 은 땜납을 사용하고; (c) 상기 최소한 하나의 은-함유 전기 접점과 전기전도성 와이어를 상기 땜납으로 물리적으로 접촉시키고 이땜납을 가열하여 상기 페이스트의 주서고가 은성분이 상기 와이어와 전기 접점사이에서 접합체를 형성함을 특징으로 하는 개량된 열 안정성을 갖는 실리콘 광전지의 제조방법.
  12. 제11항에 있어서, 상기 땜납 페이스트가 약 96% 주석/4% 은 내지 약 98% 주석/2% 은으로 이루어짐을 특징으로 하는 제조방법.
  13. 제12항에 있어서, 상기 땜납 페이스트가 상화성 융제를 더 함유함을 특징으로 하는 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920701140A 1990-09-24 1991-08-09 개량된 열안정성을 갖는 광전지 KR970007133B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/587,242 US5074920A (en) 1990-09-24 1990-09-24 Photovoltaic cells with improved thermal stability
US07/587242 1990-09-24
US07/587,242 1990-09-24
PCT/US1991/005675 WO1992005589A1 (en) 1990-09-24 1991-08-09 Photovoltaic cells with improved thermal stability

Publications (2)

Publication Number Publication Date
KR920702560A true KR920702560A (ko) 1992-09-04
KR970007133B1 KR970007133B1 (ko) 1997-05-02

Family

ID=24348984

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920701140A KR970007133B1 (ko) 1990-09-24 1991-08-09 개량된 열안정성을 갖는 광전지

Country Status (8)

Country Link
US (1) US5074920A (ko)
EP (1) EP0503015B1 (ko)
JP (1) JP2735385B2 (ko)
KR (1) KR970007133B1 (ko)
AU (1) AU640522B2 (ko)
CA (1) CA2067779A1 (ko)
DE (1) DE69132654T2 (ko)
WO (1) WO1992005589A1 (ko)

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US5478402A (en) * 1994-02-17 1995-12-26 Ase Americas, Inc. Solar cell modules and method of making same
US5476553A (en) * 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6713318B2 (en) 2001-03-28 2004-03-30 Intel Corporation Flip chip interconnection using no-clean flux
JP2004179618A (ja) * 2002-10-04 2004-06-24 Sharp Corp 太陽電池およびその製造方法、太陽電池用インターコネクター、ストリングならびにモジュール
AU2003282956A1 (en) * 2002-10-22 2004-05-13 Sunray Technologies, Inc. Diffractive structures for the redirection and concentration of optical radiation
DE602005022299D1 (de) * 2004-03-31 2010-08-26 Sanyo Electric Co Verfahren zur herstellung einer solarzelle
DE102005033724A1 (de) * 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
WO2007022106A2 (en) * 2005-08-15 2007-02-22 Konarka Technologies, Inc. Photovoltaic cells with interconnects to external circuit
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
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TW201246571A (en) * 2011-05-13 2012-11-16 Auria Solar Co Ltd Thin film solar cell module and manufacturing method thereof
KR101985053B1 (ko) 2012-03-27 2019-05-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 지향 매체를 포함하는 광기전 모듈 및 이를 제조하는 방법
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CN112567280A (zh) 2018-08-31 2021-03-26 3M创新有限公司 用于太阳能组件的具有杂散光减轻特性的光重定向膜

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Also Published As

Publication number Publication date
JP2735385B2 (ja) 1998-04-02
EP0503015B1 (en) 2001-07-11
AU8414391A (en) 1992-04-15
WO1992005589A1 (en) 1992-04-02
DE69132654D1 (de) 2001-08-16
KR970007133B1 (ko) 1997-05-02
EP0503015A4 (en) 1993-01-27
CA2067779A1 (en) 1992-03-25
DE69132654T2 (de) 2002-05-08
AU640522B2 (en) 1993-08-26
EP0503015A1 (en) 1992-09-16
US5074920A (en) 1991-12-24
JPH05502552A (ja) 1993-04-28

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