KR920020636A - 반도체 장치의 제조공정 - Google Patents

반도체 장치의 제조공정 Download PDF

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Publication number
KR920020636A
KR920020636A KR1019910006021A KR910006021A KR920020636A KR 920020636 A KR920020636 A KR 920020636A KR 1019910006021 A KR1019910006021 A KR 1019910006021A KR 910006021 A KR910006021 A KR 910006021A KR 920020636 A KR920020636 A KR 920020636A
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KR
South Korea
Prior art keywords
polysilicon
field region
semiconductor device
manufacturing process
exposed
Prior art date
Application number
KR1019910006021A
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English (en)
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KR930008858B1 (ko
Inventor
승성표
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910006021A priority Critical patent/KR930008858B1/ko
Publication of KR920020636A publication Critical patent/KR920020636A/ko
Application granted granted Critical
Publication of KR930008858B1 publication Critical patent/KR930008858B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

내용 없음

Description

반도체 장치의 제조공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도(a)-(f)는 본 발명에 따른 제조공정도이다.

Claims (1)

  1. 반도체 기판상에 산화막, 폴리실리콘, 질화막을 차례로 형성시키고 필드영역이 노출된 마스크를 사용하여 필드영역상의 상기 질화막을 제거한 후 필드 인버젼 방지층 형성을 위한 불순물 이온주입을 실시하는 공정과, 상기 필드 영역상의 노출된 폴리실리콘을 소정의 두께로 산화시키는 공정과, 상기 필드 영역이외의 질화막과 폴리실리콘을 제거하는 공정과, 노출되어 있는 산화막을 제거하는 공정과, 상기 필드 영역상에 남아있는 폴리실리콘을 제거하는 공정으로 이루어진 반도체 장치의 제조공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910006021A 1991-04-15 1991-04-15 반도체 장치의 제조공정 KR930008858B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910006021A KR930008858B1 (ko) 1991-04-15 1991-04-15 반도체 장치의 제조공정

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910006021A KR930008858B1 (ko) 1991-04-15 1991-04-15 반도체 장치의 제조공정

Publications (2)

Publication Number Publication Date
KR920020636A true KR920020636A (ko) 1992-11-21
KR930008858B1 KR930008858B1 (ko) 1993-09-16

Family

ID=19313294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910006021A KR930008858B1 (ko) 1991-04-15 1991-04-15 반도체 장치의 제조공정

Country Status (1)

Country Link
KR (1) KR930008858B1 (ko)

Also Published As

Publication number Publication date
KR930008858B1 (ko) 1993-09-16

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