KR920018854A - 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 - Google Patents

액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 Download PDF

Info

Publication number
KR920018854A
KR920018854A KR1019920002888A KR920002888A KR920018854A KR 920018854 A KR920018854 A KR 920018854A KR 1019920002888 A KR1019920002888 A KR 1019920002888A KR 920002888 A KR920002888 A KR 920002888A KR 920018854 A KR920018854 A KR 920018854A
Authority
KR
South Korea
Prior art keywords
metal
group
precursor
semiconductor
dissolved
Prior art date
Application number
KR1019920002888A
Other languages
English (en)
Inventor
에스. 핀쵸브스키 훼이벨
Original Assignee
빈센트 죠셉 로너
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 죠셉 로너, 모토로라 인코포레이티드 filed Critical 빈센트 죠셉 로너
Publication of KR920018854A publication Critical patent/KR920018854A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

내용 없음

Description

액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 액상 증착 공정을 행하기 위한 장치의 개략도.

Claims (3)

  1. 무수 유기용제에 용해된 유기금속 전구체를 포함하는 용액을 준비하는 것과, 배드(10) 온도가 유기금속 전구체의 분해온도 또는 그 이상에서 유지되는 일정 온도의 배드를 통해 용액을 순환하는 것과, 배드(10)내에 반도체 기판(12)을 담그는 것과, 반도체 기판의 표면상에 재료층을 증착하기 위해 유기 금속전구체를 열적으로 분해하는 것을 특징으로 하는 반도체 기판(12)상에 재료층의 액상증착방법.
  2. 무수 유기용제에 용해된 전이금속, Ⅲ－A족 금속, Ⅳ－A족 반도체 금속 및 Ⅱ－A족 금속으로 이루어진 그룹에서 선택된 금속을 함유하는 전구체를 포함하는 액체 혼합물을 제공하는 것과, 반도체 기판(12)을 액체 혼합물에 있게 하는 것과, 기판(12)상에 재료층을 형성하기 위해 용제의 노르말 비등점 이하의 온도에서 액상으로 전구체를 열적으로 분해하는 것을 포함하는 반도체 디바이스 재료층 형성방법.
  3. 금속화 아세틸아세톤, 알콕시드 금속 및 용해된 금속배위 유기 화합물에 대응하는 극성을 가진 유기용제에 용해된 Ⅳ－A족 반도체 금속치환 쌍고리 디엔으로 이루어진 그룹에서 선택된 금속배위 유기 전구체를 포함하는 액체 혼합물을 제공하는 것과, 반도체 디바이스(12)의 노출된 표면상에 박막을 형성하기 위해 용제의 비등점 이하의 온도에서 금속배위 유기화합물을 열적으로 분해하는 것을 포함하는 반도체 디바이스(12)상에 전이금속, 전이 산화금속, Ⅳ－A족 반도체 금속으로 이루어진 그룹에서 선택된 박막형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920002888A 1991-03-08 1992-02-25 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 KR920018854A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/666,309 US5236874A (en) 1991-03-08 1991-03-08 Method for forming a material layer in a semiconductor device using liquid phase deposition
US666,309 1991-03-08

Publications (1)

Publication Number Publication Date
KR920018854A true KR920018854A (ko) 1992-10-22

Family

ID=24673670

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920002888A KR920018854A (ko) 1991-03-08 1992-02-25 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법

Country Status (5)

Country Link
US (1) US5236874A (ko)
EP (1) EP0508582A3 (ko)
JP (1) JPH05152222A (ko)
KR (1) KR920018854A (ko)
SG (1) SG54195A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6056994A (en) * 1988-12-27 2000-05-02 Symetrix Corporation Liquid deposition methods of fabricating layered superlattice materials
US5688565A (en) * 1988-12-27 1997-11-18 Symetrix Corporation Misted deposition method of fabricating layered superlattice materials
JPH04147651A (ja) * 1990-04-02 1992-05-21 Toshiba Corp 半導体装置およびその製造方法
US5468679A (en) * 1991-02-25 1995-11-21 Symetrix Corporation Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
JPH06163585A (ja) * 1992-11-18 1994-06-10 Nippon Sheet Glass Co Ltd 薄膜トランジスタアレイの製造方法
JP3724592B2 (ja) * 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
US5429989A (en) * 1994-02-03 1995-07-04 Motorola, Inc. Process for fabricating a metallization structure in a semiconductor device
US5506006A (en) * 1994-05-04 1996-04-09 National Science Council Process for depositing silicon dioxide by liquid phase diposition
US6063714A (en) * 1995-11-16 2000-05-16 Texas Instruments Incorporated Nanoporous dielectric thin film surface modification
JP2008074704A (ja) * 1998-01-19 2008-04-03 Ube Ind Ltd ジルコニウム酸化物複合体
JP2976028B1 (ja) 1998-10-13 1999-11-10 工業技術院長 緻密でエピタキシャルな金属酸化物膜の製造方法と、その金属酸化物前駆体及びその製造方法
US6086957A (en) * 1999-05-28 2000-07-11 Sandia Corporation Method of producing solution-derived metal oxide thin films
EP1579490B1 (en) * 2002-11-19 2014-05-14 William Marsh Rice University Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth
TWI264138B (en) * 2005-12-01 2006-10-11 Univ Nat Taiwan Long wavelength emission of Si MOS LED by Si/Ge heterojunction
KR100768648B1 (ko) * 2006-05-02 2007-10-18 학교법인 포항공과대학교 코어/쉘 구조 나노입자의 제조방법
DE112015006628T5 (de) * 2015-06-18 2018-03-01 Kochi Prefectural Public University Corporation Verfahren zur Bildung eines Metalloxidfilms

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349972A (en) * 1976-10-18 1978-05-06 Seiko Epson Corp Manufacture of semiconductor device
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
WO1986006361A1 (en) * 1985-04-26 1986-11-06 Sri International Preparing metal compounds, alloys and metals by pyrolysis
JPS62297493A (ja) * 1986-06-16 1987-12-24 Electroplating Eng Of Japan Co 半導体ウェハー用メッキ装置
JP2729373B2 (ja) * 1987-01-07 1998-03-18 東京応化工業 株式会社 金属酸化膜形成用塗布液
US4946710A (en) * 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films

Also Published As

Publication number Publication date
SG54195A1 (en) 1998-11-16
EP0508582A2 (en) 1992-10-14
EP0508582A3 (en) 1993-10-27
JPH05152222A (ja) 1993-06-18
US5236874A (en) 1993-08-17

Similar Documents

Publication Publication Date Title
KR920018854A (ko) 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법
KR890011069A (ko) 세라믹 피복물을 기재위에 형성시키는 방법
DE69107656D1 (de) Chemische Abscheidemethoden unter Verwendung überkritischer Lösungen.
IE871896L (en) Tetrahydronaphthalene and indane derivatives.
US4975299A (en) Vapor deposition process for depositing an organo-metallic compound layer on a substrate
ATE27013T1 (de) Metallisiertes gewebe.
FR2403646A1 (fr) Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
KR880004129A (ko) 유기 금속 화합물
KR860003266A (ko) 금속 유기화학 증기 침전 공정
ES8704141A1 (es) Un metodo mejorado de deposicion quimica en fase vapor para producir un revestimiento de oxido de estano adulterado con fluor
KR920019671A (ko) 휘발성 알칼리 토금속 착물 및 이의 용도
ATE112512T1 (de) Chemischer dampf-niederschlag von gemischten oxidfilmen.
US4885188A (en) Process for forming thin film of metal sulfides
JPH01257194A (ja) 単結晶薄膜の製造法
KR920018056A (ko) 유기금속성 화합물
KR900015363A (ko) 초전도체를 보호피복하는 방법
SU576352A1 (ru) Парогазова среда дл нанесени окисных покрытий
PT95436A (pt) Processo de producao de uma pelicula depositada e de producao de um dispositivo semicondutor
GB1031519A (en) Method of producing vapours of controlled composition
US3367794A (en) Aluminum deposition process
ZA919693B (en) Metal growth accelerator shell for the chemical vaporization deposition of diamond
KR880013929A (ko) 신규 5-메톡시 알킬 암노늄 테트라히드로푸란 및 테트라히드로티오펜
JPS55140703A (en) Thin film element
GB1409340A (en) Superconducting niobium-gallium alloy
KR910016962A (ko) TiN의 플라즈마 화학증착방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application