KR920015423A - P-type GaAs single crystal growth method by Zn doping - Google Patents

P-type GaAs single crystal growth method by Zn doping Download PDF

Info

Publication number
KR920015423A
KR920015423A KR1019910000210A KR910000210A KR920015423A KR 920015423 A KR920015423 A KR 920015423A KR 1019910000210 A KR1019910000210 A KR 1019910000210A KR 910000210 A KR910000210 A KR 910000210A KR 920015423 A KR920015423 A KR 920015423A
Authority
KR
South Korea
Prior art keywords
single crystal
gaas single
doping
type gaas
crystal growth
Prior art date
Application number
KR1019910000210A
Other languages
Korean (ko)
Other versions
KR940009282B1 (en
Inventor
정낙진
최민호
이호성
박기석
Original Assignee
박원근
금성전선 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 박원근, 금성전선 주식회사 filed Critical 박원근
Priority to KR1019910000210A priority Critical patent/KR940009282B1/en
Publication of KR920015423A publication Critical patent/KR920015423A/en
Application granted granted Critical
Publication of KR940009282B1 publication Critical patent/KR940009282B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음No content

Description

Zn doping에 의한 p-type GaAs단결정 성장방법P-type GaAs single crystal growth method by Zn doping

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 웨이퍼(wafer)상의 EPD(etch pit density)분포도, 제3도는 본 발명의 결정 성장 전기도.1 is an etch pit density (EPD) distribution diagram on a wafer of the present invention, and FIG. 3 is a crystal growth electrical diagram of the present invention.

Claims (2)

GaAs단결정을 제조함에 있어서, p-type불순물인 Zn을 임퓨어리티 하드닝(impurity hardening)효과가 나타나도록 고농도 도우핑(doping)하고 시딩(seeding)시 서어멀-쇼크(thermal-dhock)를 방지토록 앰풀(ampule)을 종결정(seed)쪽으로 2˚정도 기울이고, 고온부와 저온부의 온도 안정성을 ±0.1℃이내로 들어오도록 하여 p-type GaAs 단결정을 성장토록 하는 Zn-doping에 의한 p-type GaAs단결정 성장방법.In manufacturing GaAs single crystal, doping of Zn, a p-type impurity, to impurity hardening effect and preventing thermal shock during seeding The p-type GaAs single crystal by Zn-doping, where the ampule is inclined about 2 ° toward the seed crystal and the temperature stability of the hot and cold portions is brought within ± 0.1 ° C to grow the p-type GaAs single crystal. How to grow. GaAs단결정을 제조함에 있어서, 보우트(boat)내부에 석영 클로스(quartz colth)를 사용하여 결정 성장시 스트레스(stress)를 완화시키고 p-type불순물인 Zn을 도우핑(doping)하여 p-type GaAs단결정을 성정토록 하는 Zn-doping에 의한 p-type GaAs단결정 성장방법.In manufacturing GaAs single crystal, quartz cloth is used inside the boat to relieve stress during crystal growth and doping of p-type impurity Zn to p-type GaAs single crystal P-type GaAs single crystal growth method by Zn-doping. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000210A 1991-01-09 1991-01-09 P-type gaas single crystal growing method by zn doping KR940009282B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000210A KR940009282B1 (en) 1991-01-09 1991-01-09 P-type gaas single crystal growing method by zn doping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000210A KR940009282B1 (en) 1991-01-09 1991-01-09 P-type gaas single crystal growing method by zn doping

Publications (2)

Publication Number Publication Date
KR920015423A true KR920015423A (en) 1992-08-26
KR940009282B1 KR940009282B1 (en) 1994-10-06

Family

ID=19309564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000210A KR940009282B1 (en) 1991-01-09 1991-01-09 P-type gaas single crystal growing method by zn doping

Country Status (1)

Country Link
KR (1) KR940009282B1 (en)

Also Published As

Publication number Publication date
KR940009282B1 (en) 1994-10-06

Similar Documents

Publication Publication Date Title
JPS6433973A (en) Method of evaporating amorphous silicon for forming intermediate level dielectric of semiconductor memory device
KR920015423A (en) P-type GaAs single crystal growth method by Zn doping
JPS5645047A (en) Manufacture of semiconductor monocrystal film
JPS55130897A (en) Silicon single crystal
JPS5262200A (en) Single crystal of gallium arsenide without dislocation
JPS5460858A (en) Manufacture of gallium arsenide crystal wafer
JPS5359385A (en) Production method of semiconductor thermal sensitive element
JPS5315299A (en) Liquid-phase epitaxial growth method of electrooptical crystals
JPS5326663A (en) Manu facture of semiconductor device
JPS567486A (en) Method of discriminating gap single crystal wafer
JPS52120764A (en) Manufacture of semiconductor device on insulator substrate
KR920015454A (en) P-type GaAs single crystal growth method by double-doping
JPS5211858A (en) Crystal growth method
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS5577170A (en) Silicon mono-crystal wafer
JPS52130487A (en) Crucible to be used in device for pulling up single crystal of semic onducto r
JPS5267258A (en) Gaas vapor growth method by doping ge donor
JPS5565427A (en) Semiconductor device
JPS5641899A (en) Vapor phase growing method for sos film
JPS51120667A (en) Crystal growing method
FR2315346A1 (en) Doped monocrystalline semiconductor ingots - esp. gallium arsenide, cooled in mould designed to obtain very high yield
JPS5379384A (en) Forming method of polycrystalline gaas thin film and stabilizing method ofsemiconductor of semiconductor
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS54586A (en) Production of semiconductor device
JPS6427221A (en) Manufacture of laminated type semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060926

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee