KR920015454A - P-type GaAs single crystal growth method by double-doping - Google Patents

P-type GaAs single crystal growth method by double-doping Download PDF

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Publication number
KR920015454A
KR920015454A KR1019910000211A KR910000211A KR920015454A KR 920015454 A KR920015454 A KR 920015454A KR 1019910000211 A KR1019910000211 A KR 1019910000211A KR 910000211 A KR910000211 A KR 910000211A KR 920015454 A KR920015454 A KR 920015454A
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KR
South Korea
Prior art keywords
single crystal
doping
type gaas
double
crystal growth
Prior art date
Application number
KR1019910000211A
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Korean (ko)
Other versions
KR950003430B1 (en
Inventor
정낙진
최민호
이호성
양영규
Original Assignee
박원근
금성전선 주식회사
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Priority to KR1019910000211A priority Critical patent/KR950003430B1/en
Publication of KR920015454A publication Critical patent/KR920015454A/en
Application granted granted Critical
Publication of KR950003430B1 publication Critical patent/KR950003430B1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음No content

Description

더블-도우핑(double-doping)에 의한 p-type GaAs 단결정 성장방법P-type GaAs single crystal growth method by double-doping

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 결정 성장 전기로 및 온도 프로파일(profile).2 shows the crystal growth furnace and temperature profile of the present invention.

Claims (2)

GaAs단결정을 제조함에 있어서, 임퓨어리티 하드닝(impruity hardening)효과를 높일 수 있으며 전기적으로 양쪽성 원소인 Si과, p-type 불순물인 Zn을 도우핑(doping)하여 p-type GaAs 단결정을 성장토록 하는 더블-도우핑(double-doping)에 의한 p-type GaAs 단결정 성장방법.In manufacturing GaAs single crystals, the impurity hardening effect can be enhanced, and p-type GaAs single crystals are grown by doping an electrically amphoteric element Si and p-type impurities Zn. P-type GaAs single crystal growth method by double-doping. 제1항에 있어서, Si를 주입할때 GaAs 모합금을 사용하여 단결정 성장토록하는 더블-도우핑(double-doping)에 의한 p-type GaAs 단결정 성장방법.The method of growing a single crystal of p-type GaAs according to claim 1, wherein the Si-implanted single crystal is grown using a GaAs mother alloy. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000211A 1991-01-09 1991-01-09 Method of growing p-type gaas single crystal by double doping KR950003430B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000211A KR950003430B1 (en) 1991-01-09 1991-01-09 Method of growing p-type gaas single crystal by double doping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000211A KR950003430B1 (en) 1991-01-09 1991-01-09 Method of growing p-type gaas single crystal by double doping

Publications (2)

Publication Number Publication Date
KR920015454A true KR920015454A (en) 1992-08-26
KR950003430B1 KR950003430B1 (en) 1995-04-12

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ID=19309565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000211A KR950003430B1 (en) 1991-01-09 1991-01-09 Method of growing p-type gaas single crystal by double doping

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Also Published As

Publication number Publication date
KR950003430B1 (en) 1995-04-12

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