KR920010899A - 반도체 메모리 셀 제조방법 - Google Patents

반도체 메모리 셀 제조방법

Info

Publication number
KR920010899A
KR920010899A KR1019900018367A KR900018367A KR920010899A KR 920010899 A KR920010899 A KR 920010899A KR 1019900018367 A KR1019900018367 A KR 1019900018367A KR 900018367 A KR900018367 A KR 900018367A KR 920010899 A KR920010899 A KR 920010899A
Authority
KR
South Korea
Prior art keywords
memory cell
semiconductor memory
cell manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019900018367A
Other languages
English (en)
Other versions
KR930008585B1 (ko
Inventor
전영권
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900018367A priority Critical patent/KR930008585B1/ko
Publication of KR920010899A publication Critical patent/KR920010899A/ko
Application granted granted Critical
Publication of KR930008585B1 publication Critical patent/KR930008585B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1019900018367A 1990-11-13 1990-11-13 반도체 메모리 셀 제조방법 KR930008585B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900018367A KR930008585B1 (ko) 1990-11-13 1990-11-13 반도체 메모리 셀 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900018367A KR930008585B1 (ko) 1990-11-13 1990-11-13 반도체 메모리 셀 제조방법

Publications (2)

Publication Number Publication Date
KR920010899A true KR920010899A (ko) 1992-06-27
KR930008585B1 KR930008585B1 (ko) 1993-09-09

Family

ID=19305993

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018367A KR930008585B1 (ko) 1990-11-13 1990-11-13 반도체 메모리 셀 제조방법

Country Status (1)

Country Link
KR (1) KR930008585B1 (ko)

Also Published As

Publication number Publication date
KR930008585B1 (ko) 1993-09-09

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Legal Events

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