KR910019212A - 디램 셀 제조방법 - Google Patents
디램 셀 제조방법Info
- Publication number
- KR910019212A KR910019212A KR1019900004990A KR900004990A KR910019212A KR 910019212 A KR910019212 A KR 910019212A KR 1019900004990 A KR1019900004990 A KR 1019900004990A KR 900004990 A KR900004990 A KR 900004990A KR 910019212 A KR910019212 A KR 910019212A
- Authority
- KR
- South Korea
- Prior art keywords
- dram cell
- cell manufacturing
- manufacturing
- dram
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900004990A KR930000716B1 (ko) | 1990-04-11 | 1990-04-11 | 디램 셀 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900004990A KR930000716B1 (ko) | 1990-04-11 | 1990-04-11 | 디램 셀 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910019212A true KR910019212A (ko) | 1991-11-30 |
KR930000716B1 KR930000716B1 (ko) | 1993-01-30 |
Family
ID=19297898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900004990A KR930000716B1 (ko) | 1990-04-11 | 1990-04-11 | 디램 셀 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930000716B1 (ko) |
-
1990
- 1990-04-11 KR KR1019900004990A patent/KR930000716B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930000716B1 (ko) | 1993-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO931864D0 (no) | Inhibering av celle - adhesjon protein - karbohydrat - reaksjoner | |
BG97381A (bg) | Еднобитова запомняща клетка | |
DE69121760T2 (de) | Halbleiterspeicherzelle | |
KR930701838A (ko) | 태양전지와 그 제조방법 | |
DE3882557T2 (de) | DRAM-Zelle und Herstellungsverfahren. | |
DE69121483T2 (de) | Dynamische Halbleiterspeicherzelle | |
DE69328342T2 (de) | Halbleiterspeicherzelle | |
DE59010020D1 (de) | Statische Speicherzelle | |
DE69120525T2 (de) | Solarzelle | |
FI924075A (fi) | Elektrokemisk process | |
DK162790D0 (da) | Plantecelle | |
NO912846D0 (no) | Astaxantin-genererende gjaerceller. | |
DE69124010T2 (de) | Halbleiterspeicherzelle | |
DE69121809T2 (de) | Multiportspeicher | |
GB9100820D0 (en) | Dram cell | |
BR9106791A (pt) | Fabricacao direta | |
DE3854005D1 (de) | Speicherzelle. | |
DE3850048D1 (de) | Speicherzellenzugriff. | |
KR910019212A (ko) | 디램 셀 제조방법 | |
KR920001726A (ko) | 메모리 셀 제조방법 | |
GB2248720B (en) | Dram cell | |
KR910019223A (ko) | 스택-트렌치 구조의 d램셀과 그 제조방법 | |
DE69604883D1 (de) | Batteriegehäuse Herstellungsverfahren | |
KR920007073A (ko) | 피모오스 ldd 제조방법 | |
KR920010899A (ko) | 반도체 메모리 셀 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021223 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |