KR920005630B1 - 와이어본더를 사용한 수지봉지 반도체장치의 제조방법 - Google Patents

와이어본더를 사용한 수지봉지 반도체장치의 제조방법 Download PDF

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KR920005630B1
KR920005630B1 KR1019830001087A KR830001087A KR920005630B1 KR 920005630 B1 KR920005630 B1 KR 920005630B1 KR 1019830001087 A KR1019830001087 A KR 1019830001087A KR 830001087 A KR830001087 A KR 830001087A KR 920005630 B1 KR920005630 B1 KR 920005630B1
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South Korea
Prior art keywords
wire
gas
bonding
semiconductor device
tip
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KR1019830001087A
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English (en)
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KR840004306A (ko
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스스무 오기가와
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가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Publication of KR840004306A publication Critical patent/KR840004306A/ko
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K28/02—Combined welding or cutting procedures or apparatus
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

내용 없음.

Description

와이어본더를 사용한 수지봉지 반도체장치의 제조방법
제1도는 종래의 와이어본더의 개략적인 구성도.
제2도는 본 발명의 1실시예인 와이어본더의 정면도.
제3도는 제2도에 도시한 와이어본더의 주요부의 확대 사시도.
제4도는 제3도의 IV-IV선의 단면도.
제5도는 본 발명에 관한 와이어본더에 의해 와이어본딩한 반도체장치의 단면도.
제6도∼제7도는 본 발명의 다른 실시예를 각각 도시한 사시도.
제8도는 본 발명의 또다른 실시예를 도시한 정면 단면도.
제9도는 수소가스(H2)농도와 본딩와이어의 볼형상의 관계를 도시한 특성도.
본 발명은 와이어본더를 사용한 수지봉지 반도체장치의 제조방법에 관한 것으로, 특히 알루미늄선, 알루미늄합금선등의 산화하기 쉬운 금속의 세선을 열압착방식의 와이어본딩법으로 본딩할 수 있도록 한 수지봉지 반도체장치의 제조방법에 관한 것이다.
반도체장치의 제조공정의 하나로써 소자펠릿의 전극패드와 그의 외부 도전체인 리이드를 와이어로써 전기적으로 접속하는 와이어본딩공정이 있으며, 현재에서는 금선(Au 와이어)를 사용한 열압착방식의 와이어본딩법과 알루미늄선(Al 와이어)를 사용한 초음파방식의 와이어본딩법이 많이 사용되고 있다. Au 와이어의 열압착방식의 와이어본딩법은 소위 네일헤드 본딩이라 하고, 내산화성 금속인 Au 와이어의 선단을 수소토치나 방전아크에 의해 가열용융해서 금볼을 형성하고, 이 금볼을 본딩부위에 캐필러리등의 와이어접속공구를 사용해서 누르면서 압착시키는 것으로, 견고한 본딩을 가능하게 함과 동시에 와이어본딩의 방향성이 존재하지 않는다는 이점을 갖는 것이지만, 본딩부위가 펠릿전극 패드와 같은 알루미늄재 일때에는 퍼플 플레이그(purple plague)현상(Au-Al 계를 300°C 이상으로 가열하면 자색의 화합물 AuAl2가 발생하는 현상)가 발생해서 본딩강도가 저하하거나 또 금은 고가이고, 또 금가격의 폭등에 의해서 코스트가 상승하게 되는 등의 문제가 있있다. 한편, Al 와이어를 사용한 초음파방식의 와이어본딩법은 Al 와이어를 초음파진동에 의해서 고착시키는 것으로써. 알루미늄선이 저렴하므로 저렴하게 할 수 있다는 이점을 갖지만, 초음파진동에 의해서 와이어본딩하는 것이므로 와이어본딩의 방향성이 존재하기 때문에 장치로써의 와이어본더의 구조가 복잡하게 됨과 동시에 열압착방식의 와이어본딩법과 비교해서 본딩속도가 떨어진다는 문제가 있었다.
이를 위해서, 근래에서는 열압착방식과 초음파방식의 양 본딩법의 각각의 이점을 살릴 수 있도록 저렴한 와이어본딩재인 알루미늄인 Al 와이어를 사용하고, 또 와이어본딩시에 무방향성이며, 장치구조가 간단하고 또한 본딩속도도 높은 열압착방식의 것을 사용한 와이어본딩법, 즉 Al 와이어의 선단에 볼을 형성해서 네일헤드본딩을 실행하는 방법이 고려되고 있다. 그러나, Au 와이어를 사용해서 수소토치나 방전아크에 의해 볼을 형성하는 종래의 와이어본더를 그대로 사용해서 산화하기 쉬운 금속인 Al 와이어로 네일헤드본딩을 실행하여도 알루미늄의 산화물에 영향을 받아서 Al 와이어의 선단에 양호한 볼을 형성할 수는 없고, 따라서 고신뢰성의 와이어본딩을 실행하는 것은 곤란한 것이 본 발명자에 의해서 명백하게 되었다.
종래의 Al 와이어를 사용해서 방전토치에 의해 Al 와이어의 선단에 볼을 형성하는 열압착방식의 와이어본더로써는 일본국 특허청에 출원된 일본국 특허출원 소화51-54834홀(일본국 특허공개공보 소화51-147174호)가 있다. 이 와이어본더는 제1도에 도시한 바와 같이 Al 와이어에 부전위를 인가하는 상태에서 Al 와이어(1)과 방전용의 전극(2)에 고전압원(3)으로부터 전위를 인가하고, 또한 Al 와이어선단을 아르곤(Ar)등의 불황성가스분위기로 유지한 상태에서 양자간에 방전아크를 발생시켜서 Al 와이어의 선단에 볼을 형성하는 것이다. 그러나, 형성된 볼의 구형도(sphericity)는 나쁘며, 또한 볼 바로위의 Al 와이어의 네크부에 압축(조여듬)이 생긴다는 문제점이 있는 것을 본 발명자는 처음에 발견하였다. 이 때문에, 이와 같은 상태에서 와이어본딩을 실행하면 압착된 볼의 원형상이 나쁘며 또한 정확한 위치로의 본딩이 곤란하게 됨과 동시에 상술한 압축부분에서 단선되기 쉽게 되어 결과적으로 본딩의 신뢰성이 저하하는 것을 본 발명에서 예의 검토한 결과 발견하였다. 이와 같은 종래의 문제점을 본 발명자가 분석하여 고찰한 결과, Al 와이어의 볼의 구형도가 나쁘며 또한 압축이 생기는 원인으로써는 Al 와이어의 표면에 형성되어 있는 알루미늄의 산화물인 알루미나(Al2O3)가 Al 와이어의 용융 및 볼형성의 장해로 되는 것, 또 방전아크카 Al 와이어의 선단근방으로 퍼져서 에너지분산이 생긴다는 것등이 큰 원인으로 되는 것이 결론으로써 얻어졌다.
본 발명의 목적은 Al이나 알루미늄합금등의 산화하기 쉬운 금속으로 이루어지는 본딩와이어와 방전용 전극사이에 방전아크를 생성시킬 수 있도록 구성한 와이어본더를 사용해서 금속으로 이루어지는 본딩와이어표면의 산화물의 영향을 없애서 양호한 구형의 볼을 본딩와이어의 자유단에 형성할 수 있는 수지봉지 반도체장치의 제조방법을 제공하는 것이다.
본 발명의 다른 목적은 본딩와이어와 방전전극사이의 방전시의 분위기가스를 적합한 것으로 하고, 또한 양자의 극성을 적합한 것으로 설정하는 것에 의해 구형도가 좋은 볼의 형성과 함께 볼근방의 본딩와이어의 압축이 없는 볼의 형성을 가능하게 한 수지봉지 반도체장치의 제조방법을 제공하는 것이다.
본 발명은 다음에 기술하는 실시예 및 도면에 의해서 명확하게 될 것이다.
이하, 본 발명의 실시예를 도면에 따라서 설명한다.
제2도는 본 발명의 1실시예인 와이어본더를 도시한 정면도이다. 제2도에서, 와이어본더의 베이스(100)에 얹어져 있는 XY 테이블(10)상에 탑재한 본딩헤드(11)에는 본딩암(12)를 그의 베이스끝에서 회전가능하게 지지하고, 와이어접속공구인 캐필러리(13)을 고정해서 마련한 선단을 캠기구에 의해서 상하로 요동할 수 있도록 하고 있다. 상기 본딩암(12)의 위쪽에는 캠구동체(14) 또는 전자솔레노이드로써 작동되는 한쌍의 클램퍼암(15), (16)을 설치하고, 이들 암(15), (16)의 각 선단을 상기 캐필러리(13)의 바로 위의 위치에 배치해서 클램퍼(17)을 형성하고 있다. (1)은 본딩와이어인 Al 와이어로써, 스풀(101)에서 인출되어 가이드(18)을 거친 후는 클램퍼(17) 사이를 통해서 캐필러리(13)으로 통과된다. 또한, 와이어로써는 Al 와이어에 한정되지 않고 실리콘(Si)를 소량 함유한 Al, 니켈(Ni)를 소량 함유한 알루미늄등의 알루이늄합금등의 산화하기 쉬운 금속재료로 이루어지는 와이어라도 좋다.
한편, (19)는 본딩 스테이지이고, 피본딩체로써의 반도체소자펠릿이 다이본딩되어 있는 리이드 프레임(21)을 탑재하고, 상기 캐필러리(13)의 상하이동에 의해서 리이드 프레임(21)과 반도체소자펠릿(22) 사이에 Al 와이어(1)을 접속시킨다.
또, (23)은 본 발명의 특징으로 하는 전기도전체로 이루어지는 방전전극부로써, 상기 캐필러리(13)의 근방에 독립해서 마련하고 있다. 이 방전전극부(23)은 제3도 및 제4도에 도시하는 바와 같이 전체를 대략 L자형상으로 형성한 내부중공의 전극(24)를 가지며, 그의 위쪽의 끝부에 일체적으로 마련한 추축(25)를 장치고정부의 베어링(26)으로 지지시키는 것에 의해 전극(24)전체를 수평방향으로 왕복동작, 즉 도시한 화살표방향으로 요동할 수 있고, 이것에 의해 전극(24)의 하측부(24a)를 상기 캐필러리(13)의 아래쪽위치, 즉 Al 와이어(1)의 선단의 바로 아래위치와 캐필러리(13)의 측위치(세이브위치) 사이에서 이동시킬 수가 있다. 이 경우, 상기 추측(25)의 일부에 크랭크(27)을 형성하고, 이 크랭크(27)과 새롭게 마련한 전자솔레노이드(28)을 연결로드(29)로써 연결하는 것에 의해 솔레노이드(28)의 왕복이동을 전극(24)의 상기한 왕복요동으로 변화할 수 있다. 또, 상기 전극(24)의 하측부(24a)의 위면에는 여러개의 관통구멍(30)를 형성해서 그 중공내부와 연동시킴과 동시에 이 하측부(24a)를 포위하도록 해서 원통형상의 커버(31)을 부착하고 있다. 이 커버(31)은 위쪽 일부에 대략 원주의 1/4의 절단부(32)를 형성하고, 전극(24)가 아래쪽으로 이동하였을때에 Al 와이어(1)의 선단이 이 절단부(32)를 통해서 커버(31)내에 침입해서 위치되도록 하고 있다. 한편, 상기 전극(24)의 베이스끝에는 중공내부에 연통하는 튜브(33)을 연이어 마련하고, 이 튜브(33)을 통해서 상기 전극(24)내에 다음에 기술하는 가스를 공급하고, 볼형성시에 이 가스를 적어도 와이어선단에 내뿜어지도록 한다. 또, 이 전극(24)와 상기 클램퍼(17) 사이에는 도시한 바와 같은 전원회로(34)를 접속하고, 이것에 의해 클램퍼(17), 즉 이것에 도통되는 Al 와이어(1)을 양극으로 함과 동시에 전극(24)를 음극으로 하고, 전극(24)에서 Al 와이어(1)을 향해서 방전아크를 생성시키도록 하고 있다.
그리고, 본 실시예에서는 상기한 가스로써 환원작용이 있는 가스, 예를들면 수소(H2), 일산화탄소(CO), 일산화이질소(N2O), 메탄(CH4)등의 가스를 불활성가스(아르곤, 질소가스) 등에서 희석한 가스를 사용하고, 이들의 가스를 전극(24)의 측부(24a)의 관통구멍(30)에서 커버(31)내로 분출시키고, 커버내, 즉 전극(24)와 Al 와이어(1) 사이를 환원성가스 분위기로 유지하도록 하고 있는 것이다.
이상의 구성에 의하면, 최초에 전자솔레노이드(28)의 작용에 의해 그 축의 신장작용에 의해서 크랭크(27)및 추축(25)를 요동하면, 전극측부(24a)는 아래쪽으로 요동해서 Al 와이어(1)의 바로 아래위치로 요동위치되고, Al 와이어(1)의 선단을 커버(31)내에 침입시킨다. 그리고, 전극(24)의 중공내부를 통해서 여러개의 관통구멍(30)에서 분출된 환원성가스에 의해 커버(31)내, 즉 Al 와이어(1)과 전극(24) 사이를 환원성가스분위기로 유지하고 나서 전원회로(34)를 ON 작동하면, Al 와이어(1)과 전극(24) 사이에서 방전아크가 발생하고, 이 아크의 에너지에 의해서 Al 와이어(1)의 자유단이 용융해서 볼이 형성되게 된다. 이때, 본 실시예에서 Al 와이어(1)은 환원성가스 분위기에서 볼의 형성이 실행되기 때문에, 알루미늄(Al)와이어 표면의 알루미늄의 산화물인 알루미나가 환원되어 알루미늄으로 되고 이 상태에서 용융되므로, Al 와이어선단은 내부 및 표면의 전체가 균일하게 용융되게 되고, 따라서 균일한 표면장력이 발생해서 구형도가 높은 볼이 형성되게 되는 것이다.
또, 본딩와이어인 Al 와이어를 양극으로 하고, 방전용 전극을 음극으로 하고 있으므로, 이때 생성되는 방전아크는 그의 Al 와이어와 전극의 극성에 따라 전극(24)에서 Al 와이어(1)을 향해서 발생한다. 따라서, 소위 클리닝작용(아크가 Al 와이어표면의 새로운 산화막을 구해서 주행하는 현상, Al 와이어선단에서 그의 근방의 넓은 범위에 걸쳐서 아크가 발생하는 작용)이 일어나는 일이 없고, 이것에 의해 Al 와이어의 볼형성 장소이외에 열의 영향을 미치는 일이 없어 알루미늄와이어의 자유단만이 국부적으로 가열용융되어 구형도가 높은 Al 볼이 형성될 수 있다. 또한, 국부적 가열방식이므로, 볼의 바로 위쪽에 압축을 생성시키는 일도 없다.
볼의 형성후는 전자솔레노이드(28)의 작용에 의해 그의 축의 단축작용에 의해서 추측(25) 및 전극(24)는 위쪽으로 향해서 요동되고, 전극측부(24a)는 Al 와이어(1)의 바로 아래위치에서 세이브된다. 따라서, 본딩암(12)의 요동에 따라서 캐필러리(13)을 아래로 이동시키면, Al 와이어(1)을 피와이어본딩체(20)의 펠릿(22)상에 열압착시킬 수가 있으므로, 형성한 볼의 구형도의 향상에 의해서 신뢰성이 높은 와이어본딩을 실행할 수가 있는 것이다.
다음에, 본 발명의 다른 실시예를 설명한다. 다른 예는 전극(24)내에 공급하는 가스로써, 상기 예의 환원성가스에 부가해서 열핀치작용이 있는 가스를 첨가한 불황성가스를 사용하는 점에 특징을 갖는다. 이 종류의 열핀치작용이 있는 가스로써는 수소(H2), 헬륨(He), 메탄(CH4), 질소(N2), 일산화탄소(CO) 등이 있으며, 이 가스가 Al 와이어(1)과 전극(24) 사이의 분위기중에 존재하면, 방전아크가 Al 와이어(1)의 선단부에 집중한다는 소위 열핀치작용이 얻어지고, 이것에 의해 방전에너지가 Al 와이어선단에 집중해서 볼형성에 유효하게 사용되고, 구형도의 향상과 함께 에너지절약의 점에서도 유효하다. 또한, 이 열핀치작용은 Al 와이어에 인가하는 전원의 극성이 양극 또는 음극이더라도, 즉 극성에 관계없이 발생하므로, 전원회로(34)가 도시한 것에 한정되는 것은 아니다. 또 가스에 수소(H2), 메탄(CH4), 일산화탄소(CO)를 사용하면, H2, CH4, CO는 환원작용과 열핀치작용의 양쪽의 작용을 갖고 있으므로, 단독인 가스로써 양쪽의 작용과 효과를 얻을 수가 있다.
이상과 같이 해서 형성된 반도체장치의 일례를 제5도에 도시한다. 이 반도체장치(40)은 리미드 프레임(21)상에 펠릿(22)를 Au-Si 공정(41) 등으로써 고착하고 나서 Al 와이어(1)로써 펠릿(22)의 패드(42)와 리이드 프레임(21)의 내부리이드(43)을 와이어접속하고, 수지(44)로써 몰드봉지하고 있다. Al 와이어(1)은 상술한 바와 같이 볼을 형성하고 나서 열압착에 의해 접속을 실행한다.
이 경우, 알루미늄(Al)와이어(1) 대신에 1중량% 정도의 실리콘(Si)를 함유한 알루미늄을 주성분으로 한 알루미늄 합금재료 또는 0.5중량% 정도의 니켈(Ni)를 함유한 알루미늄을 주성분으로 하는 알루미늄합금재료등을 본딩와이어로써 사용할 수도 있다.
또, 이들의 알루미늄(Al) 또는 알루미늄을 주성분으로 한 알루미늄합금을 본딩와이어로써 사용한 것은 그 와이어표면이 산화하기 쉬운 것이지만, 본 발명에 관한 환원성가스분위기 또는 열핀치효과가 있는 가스분위기에 의해 방전현상을 사용해서 본딩와이어선단에 볼을 형성하는 것에 있어서는 구형도가 좋은 볼을 형성할 수 있다. 또한, 상기 가스, 특히 수소가스를 사용한 것에 있어서는 본딩와이어선단의 볼부 및 그 근방의 본딩와이어는 미시적으로 보면 다공질인 상태로 되지만, 그것은 와이어본딩에 있어서의 본딩능력등의 모든 특성에는 아무런 악영향을 미치지 않는다.
또, Al 와이어(1)과 내부리이드(43)의 접속을 양호한 것으로 하기 때문에 내부리이드(43)의 표면에 은(Ag) 또는 금(Au)의 도금층(45)를 형성하고 있다.
이와 같은 반도체장치에서는 Au 와이어대신에 Al 와이어를 사용하므로, 저렴하게 제작할 수 있다. 또, 열압착법을 사용하고 있으므로, 본딩의 방향성이 없고, 와이어본더의 구성(특히 본딩스테이지나 본딩헤드의 구성)을 간단하게 할 수가 있고, 또한 열압착방식의 와이어본딩법이므로 초음파방식의 와이어본딩법에 비해서 본딩속도를 향상할 수 있다. 또 볼의 구형도가 향상한 것에 의해 와이어본딩의 신뢰성을 향상할 수도 있다.
여기서, 전극부(23)의 구성으로써는 제6도∼제8도에 도시하는 바와 같은 구성으로 하여도 좋다. 제6도의 것은 전극(24)의 하측부(24a)에 부착하는 커버(31A)의 한쪽끝을 개방하는 한편, 커버(31A)의 일부에 가스공급구(35)를 형성하고, 이 공급구(35)를 통해서 커버(31A)내에 가스를 채우도록 한 것이며, Al 와이어(1)의 선단에 가스를 내뿜는 방식이다. 제7도의 것은 커버(31B)의 양끝을 폐쇄하는 점에서는 제3도의것과 유사한 것이지만, 가스공급구(35)를 커버(31B)에 직접 마련해서 가스를 절단부(32)를 향해서 직접적으로 직류시키고, Al 와이어(1)의 근방에서 가스를 뿜어올리도록 한 방식이다. 제8도의 것은 상술한 각 실시예의 것과는 전혀 다르며, 캐필러리(13)의 바깥둘레에 커버(37)을 일체로 부착하고, 캐필러리(13)과 커버(37) 사이에 가스를 공급하는 것에 의해 가스를 커버(37)의 아래쪽끝의 열림구멍(38)에서 Al 와이어(1)의 선단에 뿜어내리도록 한 방식이다.
이들의 각 실시예에서도 Al 와이어의 선단을 소정의 가스분위기로 유지하는 점에서는 모두 공통하고 있으며, 이 가스에 환원성가스를 사용하는 것, 또는 이 환원성가스와 열핀치작용이 있는 가스와의 혼합가스를 사용하는 것은 필요에 따라서 선택할 수 있다.
또한, 본 발명에 있어서는 방전용 전원의 전압, 전류, 시간등의 전기적 요인이나 Al 와이어와 전극의 거리등의 기계적요인, 더 나아가서는 가스농도등의 화학적요인등에 의해서 볼의 구형도나 그 칫수등에 약간의 영향을 받는 일이 있으며, 이들의 요인은 요구되는 볼의 칫수등에 맞추어서 적절하게 설정하는 것이 중요하다. 덧붙여서, 수소(H2) 농도변화에 의한 볼직경/와이어직경의 특성변화를 제9도에 도시한다. 이 특성은 불활성가스인 질소(N2) 가스중에 포함되는 수소(H2) 농도로 나타내고 있으며, 수소(H2) 농도가 높을수록 볼이 구형에 가까운 것을 알 수 있다. 따라서, 수소(H2) 소비량을 코스트등을 비교한 결과에서 만족할 수 있는 볼의 얻어지는 수소(H2)농돌 설정하면 좋다.
이상과 같이 본 발명의 와이어본더에 의하면, 와이어와 전극의 사이, 다시 말하면 와이어선단의 분위기를 환원성분위기로 유지해서 양자사이에 방전아크를 생성시킬 수 있도록 구성하고, 또 열핀치작용이 일어나는 가스분위기로 유지하도록 구성하고 있으므로, 알루미늄, 알루미늄합금등의 산화가 용이한 금속제 와이어선단에 형성하는 볼의 구형도를 향상함과 동시에 와이어의 압축을 방지하고, 또 와이어와 전극의 극성을 고려하는 것에 의해 상술한 구형도나 압축을 더욱 향상하고, 알루미늄, 알루미늄합금등의 산화가 용이한 금속제 와이어를 사용한 와이어본딩의 신뢰성을 한층 향상할 수 있다는 효과를 얻는다.

Claims (9)

  1. 리이드 프레임상의 소정의 위치에 반도체장치이 펠릿의 제1의 면을 고착하고, 상기 펠릿의 제1 또는 제2의 주면의 전극패드와 대응하는 상기 리이드 프레임의 내부리이드사이를 비귀금속의 세선으로 와이어본딩하고 이들의 펠릿, 내부리이드 및 와이어를 봉하여 막는 수지봉지 반도체장치의 제조방법에 있어서, 상기 와이어본딩은 본딩용 캐필러리를 관통한 금속와이어의 선단부에 환원성가스를 공급한 상태에서 와이어측을 정의 간극으로 해서 상기 와이어선단과 소정의 간격을 두고 대향하는 전극과의 사이에 아크방전을 발생시키고. 그 열에 의해서 상기 와이어선단에 볼을 형성시키고, 그 볼을 상기 캐필러리에 의해 상기 패드에 네일헤드 본딩하는 것을 특징으로 하는 수지봉지 반도체장치의 제조방법.
  2. 특허청구의 범위 제1항에 있어서, 상기 환원성가스에는 열핀치효과를 갖는 것을 사용하는 수지봉지 반도체장치의 제조방법.
  3. 특허청구의 범위 제1항에 있어서, 상기 환원성가스 이외에, 열핀치효과를 갖는 가스를 공급한 상태에서 방전에 의해 볼을 형성하는 수지봉지 반도체장치의 제조방법.
  4. 특허청구의 범위 제1항에 있어서, 상기 와이어의 선단은 방전의 발생시에 산화되지 않도록 되어 있는 수지봉지 반도체장치의 제조방법.
  5. 특허청구의 범위 제1항에 있어서, 상기 환원성가스는 H2가스를 공기의 경우보다 많이 포함하는 수지봉지 반도체장치의 제조방법.
  6. 특허청구의 범위 제3항에 있어서, 상기 열핀치효과를 갖는 가스는 H2, He, CH4, N2로 이루어지는 군에서 선택된 적어도 한종류의 가스로 이루어지는 수지봉지 반도체장치의 제조방법.
  7. 특허청구의 범위 제2항에 있어서, 상기 열핀치효과를 갖는 가스는 H2, CH4, CO로 이루어지는 군에서 선택된 수지봉지 반도체장치의 제조방법.
  8. 특허청구의 범위 1항에 있어서, 상기 환원성가스는 적어도 볼형성시에 와이어의 선단에 내뿜어지도록 한 수지봉지 반도체장치의 제조방법.
  9. 특허청구의 범위 제4항에 있어서, 상기 환원성가스는 적어도 볼형성시에 와이어의 선단에 내뿜어지도록 한 수지봉지 반도체장치의 제조방법.
KR1019830001087A 1982-03-31 1983-03-17 와이어본더를 사용한 수지봉지 반도체장치의 제조방법 KR920005630B1 (ko)

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JPS5623750A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Ultrasonic wire bonding apparatus
DE3037735A1 (de) * 1980-10-06 1982-05-13 TS-Electronic Vertriebs-GmbH, 8000 München Kontaktierverfahren und kontaktiermaschine zur durchfuehrung des verfahrens
US4388512A (en) * 1981-03-09 1983-06-14 Raytheon Company Aluminum wire ball bonding apparatus and method
US4390771A (en) * 1981-05-11 1983-06-28 Fairchild Camera & Instrument Corp. Bonding wire ball forming method and apparatus
US4387283A (en) * 1981-08-03 1983-06-07 Texas Instruments Incorporated Apparatus and method of forming aluminum balls for ball bonding
JPS58154241A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置及びその製法
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation

Also Published As

Publication number Publication date
JPH0474859B2 (ko) 1992-11-27
FR2524704A1 (fr) 1983-10-07
GB2117299B (en) 1986-05-21
GB8412000D0 (en) 1984-06-13
US4564734A (en) 1986-01-14
FR2524704B1 (fr) 1987-03-06
GB2137914A (en) 1984-10-17
IT1161808B (it) 1987-03-18
JPS58169918A (ja) 1983-10-06
GB8308622D0 (en) 1983-05-05
KR840004306A (ko) 1984-10-10
IT8320382A0 (it) 1983-03-30
GB2117299A (en) 1983-10-12

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