JPS5623750A - Ultrasonic wire bonding apparatus - Google Patents
Ultrasonic wire bonding apparatusInfo
- Publication number
- JPS5623750A JPS5623750A JP9729379A JP9729379A JPS5623750A JP S5623750 A JPS5623750 A JP S5623750A JP 9729379 A JP9729379 A JP 9729379A JP 9729379 A JP9729379 A JP 9729379A JP S5623750 A JPS5623750 A JP S5623750A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- wire bonding
- aluminum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To accelerate an aluminum wire bonding by the ultrasonic wire bonding apparatus by inserting the end of a cylindrical bonding tool into inert gas-filled mechanism, spheroidizing beforehand a wire projected from the end and bonding it. CONSTITUTION:When a capillary 21 is lowered to insert the end into a hole 29, a voltage is applied between a discharge electrode 34 and an aluminum wire 22, a ball 39 is formed at the end of the aluminum wire projected at the end of the capillary 21, and is disposed in N2 gas so that it is not oxidized. Then, it is moved on a bonding line, and is lowered to urge the ball thereto so as to bond it by ultrasonic vibration. Subsequently, it is moved to the second bonding point and is lowerd to be secured on the way of the wire 22 by ultrasonic vibration, and is then raised. The wire 22 is then clamped to be raised. Accordingly, it is cut in the vicinity of the bonded portion. This configuration can spheroidize the aluminum wire in N2, and can be accordingly used as a tool for the capillary so as to accelerate the wire bonding work.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9729379A JPS5623750A (en) | 1979-08-01 | 1979-08-01 | Ultrasonic wire bonding apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9729379A JPS5623750A (en) | 1979-08-01 | 1979-08-01 | Ultrasonic wire bonding apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5623750A true JPS5623750A (en) | 1981-03-06 |
Family
ID=14188444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9729379A Pending JPS5623750A (en) | 1979-08-01 | 1979-08-01 | Ultrasonic wire bonding apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5623750A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524704A1 (en) * | 1982-03-31 | 1983-10-07 | Hitachi Ltd | APPARATUS FOR FIXING WELDING WIRES, IN PARTICULAR FOR SEMICONDUCTOR COMPONENTS |
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1979
- 1979-08-01 JP JP9729379A patent/JPS5623750A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524704A1 (en) * | 1982-03-31 | 1983-10-07 | Hitachi Ltd | APPARATUS FOR FIXING WELDING WIRES, IN PARTICULAR FOR SEMICONDUCTOR COMPONENTS |
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