JPS57103323A - Assembling method for semiconductor device - Google Patents
Assembling method for semiconductor deviceInfo
- Publication number
- JPS57103323A JPS57103323A JP56174583A JP17458381A JPS57103323A JP S57103323 A JPS57103323 A JP S57103323A JP 56174583 A JP56174583 A JP 56174583A JP 17458381 A JP17458381 A JP 17458381A JP S57103323 A JPS57103323 A JP S57103323A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- post
- pad
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L2224/7825—Means for applying energy, e.g. heating means
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To avoid the oxidation and corrosion of a wire by forming in advance an Au ball at the end of a fine wire inserted into a capillary by a discharging when an aluminum wire of an CI chip provided on a package is bonded via a fine Au wire to an external lead post. CONSTITUTION:An IC chip 2 having an aluminum wire 3 and an aluminum wire pad 4 on the surface is connected to a post 5 side of a package provided with an external lead post 5 on the surface, and the pad 4 is connected to the post 5 via a fine Au wire 7 by employing the capillary of a bonding device. With this structure, before the wire 7 inserted into the capillary 6 is contacted with the pad 4, an Au ball 8 is formed by an arc discharge between the electrodes 9 and 10 at the end of the wire 7, the capillary 6 is lowered to bond the wire 7 to the pad 4. Thereafter, the capillary 6 is moved as usual, extending wire 7a is secured to the post 5, and the excessive wire 7a is cut.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56174583A JPS57103323A (en) | 1981-11-02 | 1981-11-02 | Assembling method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56174583A JPS57103323A (en) | 1981-11-02 | 1981-11-02 | Assembling method for semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50064308A Division JPS51140567A (en) | 1975-05-30 | 1975-05-30 | Method for composing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57103323A true JPS57103323A (en) | 1982-06-26 |
Family
ID=15981089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56174583A Pending JPS57103323A (en) | 1981-11-02 | 1981-11-02 | Assembling method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57103323A (en) |
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1981
- 1981-11-02 JP JP56174583A patent/JPS57103323A/en active Pending
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