JPS51140567A - Method for composing semiconductor devices - Google Patents
Method for composing semiconductor devicesInfo
- Publication number
- JPS51140567A JPS51140567A JP50064308A JP6430875A JPS51140567A JP S51140567 A JPS51140567 A JP S51140567A JP 50064308 A JP50064308 A JP 50064308A JP 6430875 A JP6430875 A JP 6430875A JP S51140567 A JPS51140567 A JP S51140567A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor devices
- composing
- composing semiconductor
- wire
- corrosions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE: To obtain a highly reliable semiconductor by protecting it from corrosions such as oxidation and the like of Al wiring, when forming the extreme end of a thin metallic wire such as Au wire into a ball.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50064308A JPS51140567A (en) | 1975-05-30 | 1975-05-30 | Method for composing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50064308A JPS51140567A (en) | 1975-05-30 | 1975-05-30 | Method for composing semiconductor devices |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56174582A Division JPS57103325A (en) | 1981-11-02 | 1981-11-02 | Wire bonding method |
JP56174581A Division JPS57103324A (en) | 1981-11-02 | 1981-11-02 | Wire bonding device |
JP56174583A Division JPS57103323A (en) | 1981-11-02 | 1981-11-02 | Assembling method for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51140567A true JPS51140567A (en) | 1976-12-03 |
JPS5730294B2 JPS5730294B2 (en) | 1982-06-28 |
Family
ID=13254470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50064308A Granted JPS51140567A (en) | 1975-05-30 | 1975-05-30 | Method for composing semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51140567A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103324A (en) * | 1981-11-02 | 1982-06-26 | Hitachi Ltd | Wire bonding device |
-
1975
- 1975-05-30 JP JP50064308A patent/JPS51140567A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103324A (en) * | 1981-11-02 | 1982-06-26 | Hitachi Ltd | Wire bonding device |
Also Published As
Publication number | Publication date |
---|---|
JPS5730294B2 (en) | 1982-06-28 |
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