JPS61152030A - 半導体装置及びその製造法 - Google Patents

半導体装置及びその製造法

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Publication number
JPS61152030A
JPS61152030A JP59272831A JP27283184A JPS61152030A JP S61152030 A JPS61152030 A JP S61152030A JP 59272831 A JP59272831 A JP 59272831A JP 27283184 A JP27283184 A JP 27283184A JP S61152030 A JPS61152030 A JP S61152030A
Authority
JP
Japan
Prior art keywords
wire
copper
semiconductor device
electrode
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59272831A
Other languages
English (en)
Inventor
Senji Shoji
庄司　仙治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59272831A priority Critical patent/JPS61152030A/ja
Publication of JPS61152030A publication Critical patent/JPS61152030A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔技術分野〕 本発明は樹脂封止型半導体装置、特に素子の電極と外部
リードとの間を接続する金属ワイヤに全以外の材料を用
いた半導体装置に関する。
〔背景技術〕
従来の樹脂封止型半導体装置においては、素子と外部リ
ードとの間の金属ワイヤによる電気的接続、いわゆるワ
イヤボンディングには、主として熱圧着時に表面の酸化
されにくい金が用いられている。しかし、金は材料とし
て高価であり、又、素子側の電極がアルミニウムである
場合、金とアルミニウムとの接触点に発生する局部電池
作用により、高温中での耐食性が低下する欠点があった
。
最近、ＩＣやＬＳＩのボンディングワイヤを金からアル
ミニウムや銅へ移そうとする動きが目立ってきた。（日
経マグロウヒル社発行ＮＩＫＫＥＩＥＬＥＣＴＲＯＮＩ
Ｃ８ＭＩＣＲＯＤＥＶＩＣＥＳ　　１９８４゜６．１１
　　Ｐ、７１） しかし、アルミニウムや銅をボンデイングワイヤに使う
場合に下記のように技術的には充分に解決されていない
問題がある。本発明者は以下のことを認識した。
たとえば、アルミニウムの場合、きわめて酸化され易い
ためにボンディングワイヤ先端を加熱してボールをつく
る際に酸化族により表面張力が低下して完全な球体がで
きにくい。
また、銅の場合は硬度が大きいために、ボンディング時
に電極の下地膜（ＳｉＯｌ）Ｋ、クラックが入シやすい
。このような銅も純度を上げることに。
より比較的小さい荷重でボンディングが可能となること
がわかりてきた。しかし、第６図に示すように銅ワイヤ
５でアルミニウム電極２にボンディングした場合に、ボ
ール６０周辺部で電極のアルミニウム２と銅との間に水
が侵入すると接触電位差による局部電池作用が起ってそ
の部分１０で腐食をまねくという問題があることが明ら
かとなりた。
本発明はこれらの問題を克服するためになされたもので
ある。
〔発明の目的〕
本発明の目的とするところは、半導体装置におけるボン
ディングワイヤを高価な金に代えて、銅やアルミニウム
を使用し、しかも、ボンディング性、耐湿性を向上でき
る技術を提供することにある。
〔発明の概要〕
本願において開示される発明のうち代表的なものの概要
を説明すれば下記のとおシである。
すなわち、半導体素子と複数の外部リードとの間を金属
ワイヤにより接続された樹脂封止半導体装置において、
上記金属ワイヤに純銅を用い、このワイヤの表面を鋼酸
化物被膜で覆りであることにより、低価格でありてボン
ディング性がよく、しかも耐湿性にすぐれたワイヤボン
ディング構造をもつ半導体装置が得られる。
〔実施例１〕 第１図乃至第５図は本発明の一実施例であつて、半導体
装置の組立において、ボンディング・ワイヤに銅を使用
した場合の組立工程図の一部を示す。
以下各工程にそって説明する。
（１）　　第１図において、ｌはシリコン・チップ、２
はアルミニウムよシなる電極（パッド）、３は外部リー
ドで、上記電極２とリード３との間を鋼ワイヤ（点線で
示す）によりワイヤボンディングを行うことになる。４
はワイヤボンディングを行う丸めのステンレス、ルビー
等よシなる筒（キャピラリー）であって、ボンディング
される個所に対し、上下左右に移動するようになってい
る。
（２）上記筒４から引き出された純度の高い銅ワイヤ５
の先端に対し、非酸化性雰囲気（例、アルゴン）中でた
とえば、第２図に示すように筒７を介して電圧加熱（６
００Ｖ、１．５ｍｓの短形波）をかけることによりボー
ル６を形成する。
（３）上記筒４を第３図に示すように電極２上に降下さ
せ、２００℃の還元性雰囲気（たとえば、フォーミング
ガス、水素数％入シ）又は不活性雰囲気（アルゴン、窒
素等）中で超音波電流振動による加熱、加圧を行って上
記銅ボール６を電極にボンディングする。
（４）　　この後、簡４を上方向、横方向及び下方向に
順次移動させ、鋼ワイヤ５の他端を外部リード３にボン
ディングする。なお、外部リード３０表面にはあらかじ
め銀メッキ膜８（第５図）が施されている。
（５）ワイヤボンディング終了後、ディバイス全体（又
は一部）を１８０℃の酸化性雰囲気、たとえば大気中で
２時間加熱する。これにょシ第５図に示すように銅ワイ
ヤ５表面に銅酸化物（Ｃｕｂ。
ＣｕｔＯ）Ｏ被膜９（数１０００Ａ〜数１０ＯＡ）を有
するワイヤボンディング構造が得られる。この鋼酸化物
被膜は銅の表面の変色により直ちに判別でき、１５０℃
以上の空気中でも容易に識別できる。
このあと、図示されないが、ディバイス全体をモールド
金型にセットし１．エポキシレジンでモールドした後、
リード間を連絡するダム及びフレーム（外枠）を切シ離
してディバイスを完成する。
〔発明の効果〕
以上の実施例１で述べた本発明によれば、下記のように
効果が得られる。
（１）純度の高い銅のワイヤを使い、還元性雰囲気中で
加熱することにより、酸化しない状態で銅ボールが得ら
れ、さらに不活性雰囲気又は還元性雰囲気中で酸化する
ことなく、銅の軟らかさを保った状態でボンディングす
ることにより、アルミニウム電極の下地を破壊すること
なく安定な接続が得られる。
（２）　　ワイヤボンディング後に銅ワイヤ（ボールを
含む）の表面を絶縁物である銅酸化物の被膜で覆うこと
によりその表面が不動体（電気的に絶縁体）化される。
この不動体部分はレジンとの接着性がよいため水等が浸
入しにくい。また、水が浸入した場合にもアルミニウム
電極２との間に生じる局部電池作用が生じないため、水
の電気分解によるイオンの発生が阻止でき、これによっ
てボンディングエリアの電極の腐食が阻止できる。した
がりて、これにより高湿中でも比較的安定な、すなわち
、耐湿性の大きい半導体装置が得られる。
（３）　　ワイヤに銅を使用することにより、金のワイ
ヤに比較して原料価格が著しく節減される。
〔実施例２〕 ボンディングワイヤにアルミニウムを使う場合の実施例
について述べる。なお前記鋼ワイヤの場合の例で説明に
用いた第１図乃至第５図はこの例でもその１１転用でき
る。
（１）　　マグネシウム（Ｍｇ）又はマンガン（Ｍｎ）
等を０．５〜２．０％程度含有させたアルミニウム合金
よシなるワイヤ（５）先端を還元性又は不活性雰囲気中
　　°′で加熱することによりアルミニウムボール（６
）を形成する。アルミニウム合金を用いる理由は、純Ａ
７はやわらかすぎて、逆にボンダビリティが悪くなる恐
れがあるので、これをさけるためである。
しかし、本発明の趣旨からいえば、純Ａｌを用いてもよ
い。次いで同じ雰囲気中でアルミニウム電極（２）上に
ボンディングを行う。
（２）　　ワイヤボンディング終了後、オゾン雰囲気中
にさらすか又は加熱することにより、アルミニラニウム
酸化物（ＡＡ！＊Ｏｓ）　　被膜（９）を形成する。
（３）樹脂封止、リード間切断を行りてディバイスを完
成する。
〔発明の効果〕 以上実施例２で述べた本発明によれば、下記のように効
果が得られる。
（１）　　アルミニウム合金ワイヤを使用し、不活性雰
囲気中で加熱することにより酸化されない状態で偏芯の
少ない球形ボールが得られ、電極への接続も容易である
。
（２）電極が同じアルミニウムであることから、接触電
位差が生じず接続個所に局部電池が生じることがない。
（３）アルミニウム自体がきわめて酸化され易く、アル
ミニウム酸化物被膜は不動体であることにより、樹脂と
の接着性がよく水の浸入が少なく、浸入した場合もアル
ミニウムワイヤが腐食されにくく、安定なワイヤボンデ
ィングが得られる。
（４）　　ワイヤにアルミニウムを使用することにより
、金のワイヤに比較して原料価格が著しく節減される。
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能である。
〔利用分野〕
本発明は樹脂パッケージＩＣ，特に薄型ノくツケージ製
品に適用した場合に有効である。
【図面の簡単な説明】
第１図乃至第５図は本発明の実施例を示し、ワイヤボン
ディング時の工程図である。なお、第５図は完成時のワ
イヤボンディング部分の拡大断面図である。 第６図は従来のワイヤボンディングの例を示す断面図で
ある。 １・・・シリコンチップ、２・・・アルミニウム電極、
３・・・外部リード、４・・・金属筒、５・・・ワイヤ
（銅。 アルミニウム、金）、６・・・（ボール）、９・・・酸
化物被膜（ＣｕＯ、Ａｌｔｏｓ　）、１２・・・レジン
バツケ−第　　１　　図 第２図 第　　３　　Ｍ 第　　４　　図 第　　５　　図 第　　６　　図

Claims (1)

  1. 【特許請求の範囲】 １、半導体素子と、複数の外部リードと、上記半導体素
    子の電極との間を接続する金属ワイヤとを有し、樹脂成
    形体により封止された半導体装置であって、上記金属ワ
    イヤ表面はその金属の酸化物膜で覆われていることを特
    徴とする半導体装置。 ２、上記金属は銅である特許請求の範囲第１項に記載の
    半導体装置。 ３、上記金属はアルミニウムである特許請求の範囲第１
    項に記載の半導体装置。 ４、半導体素子の電極に対して銅ワイヤを用いてワイヤ
    ボンデイングするにあたり、純度の高い銅のワイヤ先端
    を不活性乃至還元性の雰囲気中で加熱してボールを形成
    するとともに上記雰囲気中でこのボールを電極にボンデ
    ィングした後、上記銅ワイヤを大気中又は酸化性雰囲気
    中で加熱すること等により、ワイヤ表面に酸化被膜を形
    成することを特徴とする半導体装置の製造法。
JP59272831A 1984-12-26 1984-12-26 半導体装置及びその製造法 Pending JPS61152030A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272831A JPS61152030A (ja) 1984-12-26 1984-12-26 半導体装置及びその製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272831A JPS61152030A (ja) 1984-12-26 1984-12-26 半導体装置及びその製造法

Publications (1)

Publication Number Publication Date
JPS61152030A true JPS61152030A (ja) 1986-07-10

Family

ID=17519374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272831A Pending JPS61152030A (ja) 1984-12-26 1984-12-26 半導体装置及びその製造法

Country Status (1)

Country Link
JP (1) JPS61152030A (ja)

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