KR920005149A - 반도체 메모리 장치의 센스앰프 제어회로 - Google Patents

반도체 메모리 장치의 센스앰프 제어회로

Info

Publication number
KR920005149A
KR920005149A KR1019900012901A KR900012901A KR920005149A KR 920005149 A KR920005149 A KR 920005149A KR 1019900012901 A KR1019900012901 A KR 1019900012901A KR 900012901 A KR900012901 A KR 900012901A KR 920005149 A KR920005149 A KR 920005149A
Authority
KR
South Korea
Prior art keywords
control circuit
memory device
semiconductor memory
sense amplifier
amplifier control
Prior art date
Application number
KR1019900012901A
Other languages
English (en)
Other versions
KR930006621B1 (ko
Inventor
황홍선
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019900012901A priority Critical patent/KR930006621B1/ko
Publication of KR920005149A publication Critical patent/KR920005149A/ko
Application granted granted Critical
Publication of KR930006621B1 publication Critical patent/KR930006621B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019900012901A 1990-08-18 1990-08-18 반도체 메모리 장치의 센스앰프 제어회로 KR930006621B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900012901A KR930006621B1 (ko) 1990-08-18 1990-08-18 반도체 메모리 장치의 센스앰프 제어회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012901A KR930006621B1 (ko) 1990-08-18 1990-08-18 반도체 메모리 장치의 센스앰프 제어회로

Publications (2)

Publication Number Publication Date
KR920005149A true KR920005149A (ko) 1992-03-28
KR930006621B1 KR930006621B1 (ko) 1993-07-21

Family

ID=19302581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012901A KR930006621B1 (ko) 1990-08-18 1990-08-18 반도체 메모리 장치의 센스앰프 제어회로

Country Status (1)

Country Link
KR (1) KR930006621B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297217B1 (ko) * 1997-06-18 2001-08-07 가네꼬 히사시 전류검출형감지증폭기
KR100403340B1 (ko) * 2001-06-30 2003-10-30 주식회사 하이닉스반도체 이피롬의 센스 앰프

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297217B1 (ko) * 1997-06-18 2001-08-07 가네꼬 히사시 전류검출형감지증폭기
KR100403340B1 (ko) * 2001-06-30 2003-10-30 주식회사 하이닉스반도체 이피롬의 센스 앰프

Also Published As

Publication number Publication date
KR930006621B1 (ko) 1993-07-21

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060630

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee