KR920003436A - 감압 챔버 시스템 - Google Patents

감압 챔버 시스템 Download PDF

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Publication number
KR920003436A
KR920003436A KR1019910012432A KR910012432A KR920003436A KR 920003436 A KR920003436 A KR 920003436A KR 1019910012432 A KR1019910012432 A KR 1019910012432A KR 910012432 A KR910012432 A KR 910012432A KR 920003436 A KR920003436 A KR 920003436A
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KR
South Korea
Prior art keywords
chamber system
pressure reduction
cashier
cover
reduction chamber
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Application number
KR1019910012432A
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English (en)
Other versions
KR0165850B1 (ko
Inventor
사또시 가네꼬
다이찌 후지다
유끼마사 요시다
가쯔야 오꾸무라
Original Assignee
이노우에 아끼라
도꾜 일렉트론 리미티드
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Application filed by 이노우에 아끼라, 도꾜 일렉트론 리미티드 filed Critical 이노우에 아끼라
Publication of KR920003436A publication Critical patent/KR920003436A/ko
Application granted granted Critical
Publication of KR0165850B1 publication Critical patent/KR0165850B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)

Abstract

내용 없음

Description

감압 챔버 시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 감압챔버 시스템으로서의 로드록 챔버가 조립된 마그네트론 플라즈마 에칭 시스템을 나타내는 전체 레이아웃도,
제2도는 프로세스 챔버의 개요를 나타내는 종단면도.

Claims (7)

  1. 복수의 챔버사이를 로도록 게이를 통하여 연통 또는 차단되는 감압챔버와, 상기 한쪽의 감압챔버내에 설치되고, 피반송체를 상기 복수의 감압챔버 사이에서 상기 로드록 게이트를 통하여 출납하는 피반송체 출납기구와, 상기 출납기구의 구동력 전달 부분을 덮는 바깥울타리 커버와, 이 바깥 울타리 커버에 부착되고, 바깥 울타리커브의 내외에 연통하는 필터 수단과, 상기 출납 기구의 바깥 울타리 커버와, 상기 감압 챔버와의 사이에 형성되는 공간 영역을 진공배기하는 수단을 가지고, 그 중에서 상기 진공배기 수단에 의해 상기 공간 영역을 배기했을때에, 상기 출납기구의 구동력 전달부분에서 생긴 이물이 상기 필터 수단에 의해 포착되는 것을 포함하는 감압하의 복수의 챔버사이에서 피반송체를 출납하는 감압챔버시스템.
  2. 제1항에 있어서, 상기 출납 기구가 다관절 아암을 가지는 프록레그방식의 기구이며, 이 가운데 제1아암이 카버로 덮어지고, 이 아암 커버와 상기 바깥 울타리 커버의 연결부가 자성유체로 시일되어 있는 것을 포함하는 감압 챔버 시스템.
  3. 제1항에 있어서, 상기 출납기구가 다관절 아암을 가지는 프록레그방식의 기구이며, 이들의 다관절 아암이 전기양도체로 만들어지고, 또한 다관절 아암이 어스되어 있으며, 상기 피처리체에 충전한 정전기를 다관절 아암에 통하여 충전하는 것을 포함하는 감압 챔버 시스템.
  4. 제1항에 있어서, 상기 필터 수단이 상기 바깥 둘레커버의 측벽에 착탈 가능하게 부착되어 있는 것을 포함하는 감압 챔버 시스템.
  5. 제1항에 있어서, 상기 필터 수단의 엘리멘트가 종이 필터인 것을 포함하는 감압 챔버 시스템.
  6. 제5항에 있어서, 상기 필터 수단이 엘리멘트의 메시개구 지름이 0.05~0.15㎛인 것을 포함하는 감압 챔버 시스템.
  7. 제1항에 있어서, 또한, 게이트 수단이 감압 챔버와 프로세스 챔버 사이에 설치되어 있는 것을 포함하는 감압 챔버 시스템.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012432A 1990-07-20 1991-07-20 감압 챔버 시스템 KR0165850B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2192466A JP2938160B2 (ja) 1990-07-20 1990-07-20 真空処理装置
JP2-192466 1990-07-20
JP90-192466 1990-07-20

Publications (2)

Publication Number Publication Date
KR920003436A true KR920003436A (ko) 1992-02-29
KR0165850B1 KR0165850B1 (ko) 1999-02-01

Family

ID=16291766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012432A KR0165850B1 (ko) 1990-07-20 1991-07-20 감압 챔버 시스템

Country Status (3)

Country Link
US (1) US5178638A (ko)
JP (1) JP2938160B2 (ko)
KR (1) KR0165850B1 (ko)

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JPH0689837A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 基板処理装置
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US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
US6517303B1 (en) * 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6458212B1 (en) 2000-03-13 2002-10-01 Advanced Micro Devices, Inc. Mesh filter design for LPCVD TEOS exhaust system
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus
KR100417245B1 (ko) * 2001-05-02 2004-02-05 주성엔지니어링(주) 웨이퍼 가공을 위한 클러스터 툴
JP4719562B2 (ja) * 2005-12-05 2011-07-06 日本電産サンキョー株式会社 ロボットアーム及びロボット
US7467916B2 (en) * 2005-03-08 2008-12-23 Asm Japan K.K. Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
JP5330721B2 (ja) 2007-10-23 2013-10-30 オルボテック エルティ ソラー，エルエルシー 処理装置および処理方法
CN102046840B (zh) * 2008-03-25 2012-08-01 奥宝科技Lt太阳能有限公司 处理装置及处理方法
JP5835722B2 (ja) * 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置
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Also Published As

Publication number Publication date
JPH0478125A (ja) 1992-03-12
US5178638A (en) 1993-01-12
JP2938160B2 (ja) 1999-08-23
KR0165850B1 (ko) 1999-02-01

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