KR920000963A - 얇은막 형성장치 - Google Patents

얇은막 형성장치 Download PDF

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Publication number
KR920000963A
KR920000963A KR1019910010082A KR910010082A KR920000963A KR 920000963 A KR920000963 A KR 920000963A KR 1019910010082 A KR1019910010082 A KR 1019910010082A KR 910010082 A KR910010082 A KR 910010082A KR 920000963 A KR920000963 A KR 920000963A
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KR
South Korea
Prior art keywords
thin film
film forming
substrate
vapor
ruster
Prior art date
Application number
KR1019910010082A
Other languages
English (en)
Other versions
KR930010338B1 (ko
Inventor
히로모또 이또
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920000963A publication Critical patent/KR920000963A/ko
Application granted granted Critical
Publication of KR930010338B1 publication Critical patent/KR930010338B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용없음

Description

얇은막 형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1의 발명의 한 실시예의 한 얇은막 형성장치를 표시하는 측면단면도,
제2도는 제2의 발명의 한 실시예의 한 얇은막 형성장치를 표시하는 측면단면도.

Claims (2)

  1. 소정의 진공도로 유지된 진공조와 이 진공조내에 배치된 기판과 이 기판에 대항하여 설치되고 또한 이 기판에 향하여 증착물질의 증기를 분출하여 증착물질의 크라스터를 발생시키는 도가니, 이도가니를 가열하는 가열용 필라멘트 및 가열용 필라멘트로부터의 열을 차단하는 열 실드판으로 구성되는 증기 발생원과 이증기 발생원과 상기 크라스터의 일부를 이온화하는 이 이온화수단과 이온화수단에 의하여 이온화된 크라스터 및 이온화되어 있지 않은 증착물질의 크라스터 또는 증기를 상기 기판에 향하여 운동에너지를 부여하여 충돌시키기 위한 가속수단과를 구비한 얇은막 형성장치에 있어서 상기 이온화수단으로 이온화된 크라스터중 작은 사이즈의 크라스터를 제거하는 필터를 구비한 것을 특징으로 하는 얇은막 형성장치.
  2. 제1항에 있어서 상기 가속수단을 양에 바이어스된 가속전극과 이가속전극에 대하여 음에 바이어스된 인출전극과 접지된 어스전극과에 의하여 구성된 것을 특징으로 하는 얇은막 형성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910010082A 1990-06-18 1991-06-18 얇은막 형성장치 KR930010338B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-160270 1990-06-18
JP2160270A JPH0452273A (ja) 1990-06-18 1990-06-18 薄膜形成装置
JP2-160270 1990-06-18

Publications (2)

Publication Number Publication Date
KR920000963A true KR920000963A (ko) 1992-01-29
KR930010338B1 KR930010338B1 (ko) 1993-10-16

Family

ID=15711372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010082A KR930010338B1 (ko) 1990-06-18 1991-06-18 얇은막 형성장치

Country Status (7)

Country Link
US (1) US5100526A (ko)
EP (1) EP0462688B1 (ko)
JP (1) JPH0452273A (ko)
KR (1) KR930010338B1 (ko)
CN (1) CN1057492A (ko)
CA (1) CA2034243A1 (ko)
DE (1) DE69108113T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915170B2 (ja) * 1991-06-05 1999-07-05 三菱電機株式会社 薄膜形成装置及び薄膜形成方法
JP3193764B2 (ja) * 1992-04-04 2001-07-30 シチズン時計株式会社 イオンプレーティング装置
JPH05287513A (ja) * 1992-04-04 1993-11-02 Citizen Watch Co Ltd イオンプレーティング装置
US5840167A (en) * 1995-08-14 1998-11-24 Lg Semicon Co., Ltd Sputtering deposition apparatus and method utilizing charged particles
US5656091A (en) * 1995-11-02 1997-08-12 Vacuum Plating Technology Corporation Electric arc vapor deposition apparatus and method
US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
KR0182373B1 (ko) * 1996-07-18 1999-04-01 박원훈 박막 증착 장치
RU2190040C2 (ru) * 1999-05-14 2002-09-27 Чижов Александр Христафорович Устройство для нанесения в электрическом поле на один из электродов покрытий из материалов в виде порошка (варианты)
CN100347537C (zh) * 1999-11-15 2007-11-07 松下电器产业株式会社 生物传感器
KR100490537B1 (ko) 2002-07-23 2005-05-17 삼성에스디아이 주식회사 가열용기와 이를 이용한 증착장치
KR100889758B1 (ko) * 2002-09-03 2009-03-20 삼성모바일디스플레이주식회사 유기박막 형성장치의 가열용기
KR100987670B1 (ko) * 2003-08-04 2010-10-13 엘지디스플레이 주식회사 유기 전계 발광층 증착용 증착원
CN100412226C (zh) * 2004-10-18 2008-08-20 中华映管股份有限公司 等离子体显示器之前基板的制造方法、蒸镀工艺与蒸镀装置
KR102053249B1 (ko) * 2013-05-02 2020-01-09 삼성디스플레이 주식회사 증착 소스 및 그것을 포함하는 증착 장치
US20190048460A1 (en) * 2017-08-14 2019-02-14 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Evaporation Crucible and Evaporation System
CN109355629B (zh) * 2018-11-27 2020-12-11 杭州科汀光学技术有限公司 一种薄膜滤光片的低温制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films
US4218495A (en) * 1975-07-18 1980-08-19 Futaba Denshi Kogyo K.K. Schottky barrier type solid-state element
CA1148655A (en) * 1979-02-23 1983-06-21 Toshinori Takagi Magnetic recording medium and process for production thereof
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
CN1019513B (zh) * 1986-10-29 1992-12-16 三菱电机株式会社 化合物薄膜形成装置
JPS63179060A (ja) * 1987-01-20 1988-07-23 Mitsubishi Electric Corp 薄膜形成装置
US4740267A (en) * 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JP2501828B2 (ja) * 1987-06-09 1996-05-29 三菱電機株式会社 薄膜蒸着装置
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원

Also Published As

Publication number Publication date
EP0462688A1 (en) 1991-12-27
DE69108113T2 (de) 1995-11-23
JPH0452273A (ja) 1992-02-20
CN1057492A (zh) 1992-01-01
CA2034243A1 (en) 1991-12-19
US5100526A (en) 1992-03-31
EP0462688B1 (en) 1995-03-15
KR930010338B1 (ko) 1993-10-16
DE69108113D1 (de) 1995-04-20

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