KR910021022A - 히스테리시스회로 - Google Patents

히스테리시스회로 Download PDF

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Publication number
KR910021022A
KR910021022A KR1019910008415A KR910008415A KR910021022A KR 910021022 A KR910021022 A KR 910021022A KR 1019910008415 A KR1019910008415 A KR 1019910008415A KR 910008415 A KR910008415 A KR 910008415A KR 910021022 A KR910021022 A KR 910021022A
Authority
KR
South Korea
Prior art keywords
transistor
base
resistor
circuit
supply source
Prior art date
Application number
KR1019910008415A
Other languages
English (en)
Other versions
KR940002861B1 (ko
Inventor
히토시 기노시타
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910021022A publication Critical patent/KR910021022A/ko
Application granted granted Critical
Publication of KR940002861B1 publication Critical patent/KR940002861B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/305—Modifications for providing a predetermined threshold before switching in thyristor switches

Landscapes

  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

내용 없음

Description

히스테리시스회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 히스테리시스회로를 나타낸 회로도, 제2도는 상기 제1도에 도시된 제1 및 제2스위칭회로를 구체적으로 나타낸 회로도, 제3도는 상기 제2도에 도시된 히스테리시스회로의 히스테리시스특성을 나타낸 도면.

Claims (2)

  1. 베이스가 제1저항 (R1)을 매개하여 출력단자 (Vout)에 접속되고 에미터가 상기 출력단자 (Vout)에 접속됨과 더불어 제2저항 (R2)을 매개하여 제1전위공급원 (VDD)에 접속되는 제1트랜지스터 (Q1)와, 베이스가 제3저항 (R3)을 매개하여 제2전위공급원 (Vss)에 접속됨과 더불어 상기 제1트랜지스터 (Q1)의 콜렉터에 접속되고 에미터가 상기 제2전위공급원 (Vss)에 접속되며 콜렉터가 상기 제1트랜지스터 (Q1)의 베이스에 접속되는 제2트랜지스터 (Q2), 일단이 입력단자 (Vin)에 접속되고 타단이 상기 제1트랜지스터 (Q1)의 베이스에 접속되는 제1스위칭회로 (102), 일단이 상기 입력단자 (Vin)에 접속되고 타단이 상기 제2트랜지스터 (Q2)의 베이스에 접속되는 제2스위칭회로 (103)를 구비하여 구성된 것을 특징으로 하는 히스테리시스회로.
  2. 제1항에 있어서, 상기 제1 및 제2스위칭회로(102, 103)는 동일한 변화량에 대해 그 회로문턱치가 서로 독립적으로 설정될 수 있도록 구성되어 있는 것을 특징으로 하는 히스테리시스회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910008415A 1990-05-25 1991-05-24 히스테리시스회로 KR940002861B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2-136704 1990-05-25
JP1990-136704 1990-05-25
JP2136704A JP2573394B2 (ja) 1990-05-25 1990-05-25 ヒステリシス回路

Publications (2)

Publication Number Publication Date
KR910021022A true KR910021022A (ko) 1991-12-20
KR940002861B1 KR940002861B1 (ko) 1994-04-04

Family

ID=15181533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910008415A KR940002861B1 (ko) 1990-05-25 1991-05-24 히스테리시스회로

Country Status (6)

Country Link
US (1) US5287014A (ko)
EP (1) EP0485617B1 (ko)
JP (1) JP2573394B2 (ko)
KR (1) KR940002861B1 (ko)
DE (1) DE69128456T2 (ko)
WO (1) WO1991019354A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
US6020767A (en) * 1998-05-04 2000-02-01 International Business Machines Corporation CMOS chip to chip settable interface receiver cell
US6462971B1 (en) * 1999-09-24 2002-10-08 Power Integrations, Inc. Method and apparatus providing a multi-function terminal for a power supply controller
JP2002287832A (ja) * 2001-03-27 2002-10-04 Sharp Corp 送信装置
CN103944542A (zh) * 2013-01-22 2014-07-23 浙江海得新能源有限公司 一种晶闸管辅助关断装置
US11575379B2 (en) 2021-03-23 2023-02-07 Delphi Technologies Ip Limited Switch with hysteresis

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310686A (en) * 1963-06-14 1967-03-21 Rca Corp Flip flip circuits utilizing set-reset dominate techniques
US3392290A (en) * 1965-07-21 1968-07-09 Ibm Bistable device employing transistors of complementary types
JPS4410690Y1 (ko) * 1966-10-31 1969-04-30
US3816767A (en) * 1973-03-23 1974-06-11 Electrospace Corp Schmitt trigger circuit
JPS5346587B2 (ko) * 1974-02-14 1978-12-14
JPS5186954A (ja) * 1975-01-29 1976-07-30 Takeda Riken Ind Co Ltd Shingoreberukenshutsusochi
JPS5389350A (en) * 1977-01-17 1978-08-05 Mitsubishi Electric Corp Schmitt trigger circuit
US4115707A (en) * 1977-03-31 1978-09-19 Rca Corporation Circuit for single-line control of GTO controlled rectifier conduction
JPS553210A (en) * 1978-06-21 1980-01-11 Toshiba Corp Waveform shaping circuit
JPS58201419A (ja) * 1982-05-19 1983-11-24 Matsushita Electric Ind Co Ltd Ｒ−ｓフリツプフロツプ回路
US4572968A (en) * 1983-03-04 1986-02-25 Motorola, Inc. SCR Fire sensitivity control and fire control apparatus
JPS60114024A (ja) * 1983-11-26 1985-06-20 Sanyo Electric Co Ltd ヒステリシス回路
JPS60208119A (ja) * 1984-03-30 1985-10-19 Hitachi Ltd 容量性負荷の駆動回路
JPS6331216A (ja) * 1986-07-25 1988-02-09 Hitachi Ltd パルス発生回路

Also Published As

Publication number Publication date
JP2573394B2 (ja) 1997-01-22
EP0485617A1 (en) 1992-05-20
WO1991019354A1 (en) 1991-12-12
EP0485617B1 (en) 1997-12-17
JPH0435216A (ja) 1992-02-06
DE69128456T2 (de) 1998-05-07
KR940002861B1 (ko) 1994-04-04
EP0485617A4 (en) 1993-05-05
US5287014A (en) 1994-02-15
DE69128456D1 (de) 1998-01-29

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