KR910009131B1 - 실리콘 단결정 성장(Pull-up)장치 - Google Patents

실리콘 단결정 성장(Pull-up)장치 Download PDF

Info

Publication number
KR910009131B1
KR910009131B1 KR1019870015147A KR870015147A KR910009131B1 KR 910009131 B1 KR910009131 B1 KR 910009131B1 KR 1019870015147 A KR1019870015147 A KR 1019870015147A KR 870015147 A KR870015147 A KR 870015147A KR 910009131 B1 KR910009131 B1 KR 910009131B1
Authority
KR
South Korea
Prior art keywords
crucible
heat insulating
cylinder
single crystal
carbon
Prior art date
Application number
KR1019870015147A
Other languages
English (en)
Korean (ko)
Other versions
KR880008414A (ko
Inventor
스이쯔 마쯔오
가즈오 이또
다쯔오 노자와
마사유끼 사이또
Original Assignee
도시바 세라믹스 가부시끼가이샤
히요시 준이찌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31557986A external-priority patent/JPH0751472B2/ja
Priority claimed from JP61315600A external-priority patent/JPH0751475B2/ja
Priority claimed from JP61315581A external-priority patent/JPH0751474B2/ja
Application filed by 도시바 세라믹스 가부시끼가이샤, 히요시 준이찌 filed Critical 도시바 세라믹스 가부시끼가이샤
Publication of KR880008414A publication Critical patent/KR880008414A/ko
Application granted granted Critical
Publication of KR910009131B1 publication Critical patent/KR910009131B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019870015147A 1986-12-26 1987-12-26 실리콘 단결정 성장(Pull-up)장치 KR910009131B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP315600 1986-12-26
JP31557986A JPH0751472B2 (ja) 1986-12-26 1986-12-26 シリコン単結晶引上装置
JP315581 1986-12-26
JP?61-315581 1986-12-26
JP315579 1986-12-26
JP61315600A JPH0751475B2 (ja) 1986-12-26 1986-12-26 シリコン単結晶引上装置
JP61315581A JPH0751474B2 (ja) 1986-12-26 1986-12-26 シリコン単結晶引上装置
JP?61-315579 1986-12-26
JP?61-315600 1986-12-26

Publications (2)

Publication Number Publication Date
KR880008414A KR880008414A (ko) 1988-08-31
KR910009131B1 true KR910009131B1 (ko) 1991-10-31

Family

ID=27339483

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870015147A KR910009131B1 (ko) 1986-12-26 1987-12-26 실리콘 단결정 성장(Pull-up)장치

Country Status (2)

Country Link
KR (1) KR910009131B1 (US08066781-20111129-C00013.png)
DE (1) DE3743952A1 (US08066781-20111129-C00013.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4130253C2 (de) * 1991-09-12 2001-10-04 Sgl Carbon Ag Mehrteiliger Stütztiegel und Verfahren zu seiner Herstellung
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2817822B2 (ja) * 1992-05-14 1998-10-30 富士電機株式会社 電子写真用感光体

Also Published As

Publication number Publication date
KR880008414A (ko) 1988-08-31
DE3743952C2 (US08066781-20111129-C00013.png) 1991-06-27
DE3743952A1 (de) 1988-07-07

Similar Documents

Publication Publication Date Title
KR910009130B1 (ko) 실리콘 단결정 성장(Pull-up)장치
KR100334324B1 (ko) 고순도복합재료,이고순도복합재료를갖는쵸크랄스키공정로구성요소와반도체결정성장장치및,이결정성장장치를이용한쵸크랄스키결정성장방법
KR100310317B1 (ko) 실리콘 단결정 추출 장치
KR20010020451A (ko) 서셉터로서 유용한 고순도 합성물
CN109280977B (zh) 碳化硅长晶剩料的综合利用方法
US3275415A (en) Apparatus for and preparation of silicon carbide single crystals
JPH11278857A (ja) シリカガラスの製造方法
KR910009131B1 (ko) 실리콘 단결정 성장(Pull-up)장치
KR20120136219A (ko) 잉곳 제조 장치
KR930005407B1 (ko) 실리콘 단결정(單結晶)의 제조장치
KR920003612B1 (ko) 실리콘 단결정 성장(Pulling-up)장치
Verspui et al. Lanthanum-stimulated high-temperature whisker growth of α-SiC
GB1569652A (en) Manufacture of silicon rods or tubes by deposition
JPS6461382A (en) Apparatus for pulling up single crystal rod
KR20120140151A (ko) 잉곳 제조 장치
WO2020087719A1 (zh) 碳化硅长晶剩料制备的高纯碳材料及其制备方法和应用
JPH1072291A (ja) シリコン単結晶引き上げ装置用のルツボ
US2987383A (en) Purification of elemental boron
JPH03290393A (ja) Ｓｉ単結晶製造用ルツボ
JPS58181797A (ja) 単結晶シリコン引上装置
JPS6126593A (ja) シリコン単結晶引上用カ−ボンルツボ
JP2544730B2 (ja) 炭素質多孔体断熱材の製造方法
JP4198806B2 (ja) シリコン単結晶引き上げ装置用の回転軸
KR20070064210A (ko) 단결정 잉곳 성장장치
JPH0751472B2 (ja) シリコン単結晶引上装置

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19981013

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee