KR910007097B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR910007097B1
KR910007097B1 KR1019840000207A KR840000207A KR910007097B1 KR 910007097 B1 KR910007097 B1 KR 910007097B1 KR 1019840000207 A KR1019840000207 A KR 1019840000207A KR 840000207 A KR840000207 A KR 840000207A KR 910007097 B1 KR910007097 B1 KR 910007097B1
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KR
South Korea
Prior art keywords
film
semiconductor device
heat treatment
tungsten
manufacturing
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Expired
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KR1019840000207A
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English (en)
Korean (ko)
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KR840007307A (ko
Inventor
노부요시 고바야시
세이이찌 이와다
나오끼 야마모도
히도시 마쯔오
데이이찌 혼마
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Publication of KR840007307A publication Critical patent/KR840007307A/ko
Application granted granted Critical
Publication of KR910007097B1 publication Critical patent/KR910007097B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019840000207A 1983-01-19 1984-01-18 반도체 장치의 제조 방법 Expired KR910007097B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6868 1983-01-19
JP58-6868 1983-01-19
JP58006868A JPS59132136A (ja) 1983-01-19 1983-01-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR840007307A KR840007307A (ko) 1984-12-06
KR910007097B1 true KR910007097B1 (ko) 1991-09-18

Family

ID=11650210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840000207A Expired KR910007097B1 (ko) 1983-01-19 1984-01-18 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US4505028A (https=)
EP (1) EP0116317B1 (https=)
JP (1) JPS59132136A (https=)
KR (1) KR910007097B1 (https=)
DE (1) DE3485622D1 (https=)

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US4587710A (en) * 1984-06-15 1986-05-13 Gould Inc. Method of fabricating a Schottky barrier field effect transistor
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US5789312A (en) * 1996-10-30 1998-08-04 International Business Machines Corporation Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
JPH10223900A (ja) * 1996-12-03 1998-08-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
US6893980B1 (en) * 1996-12-03 2005-05-17 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method therefor
TW577128B (en) 1997-03-05 2004-02-21 Hitachi Ltd Method for fabricating semiconductor integrated circuit device
JPH10335652A (ja) 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH10340909A (ja) * 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP4283904B2 (ja) * 1997-07-11 2009-06-24 株式会社東芝 半導体装置の製造方法
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6159866A (en) 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
EP0910119B1 (en) * 1997-10-14 2009-06-03 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
US6452276B1 (en) 1998-04-30 2002-09-17 International Business Machines Corporation Ultra thin, single phase, diffusion barrier for metal conductors
JPH11330468A (ja) * 1998-05-20 1999-11-30 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
US6162694A (en) * 1998-11-25 2000-12-19 Advanced Micro Devices, Inc. Method of forming a metal gate electrode using replaced polysilicon structure
DE19901210A1 (de) * 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2000349285A (ja) * 1999-06-04 2000-12-15 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
TW434704B (en) * 1999-06-11 2001-05-16 Univ Nat Yunlin Sci & Tech Device of amorphous WO3 ion sensitive field effect transistor (ISFET) and method for making the same
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
JP2001274154A (ja) 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
US6603181B2 (en) * 2001-01-16 2003-08-05 International Business Machines Corporation MOS device having a passivated semiconductor-dielectric interface
WO2002073696A1 (en) 2001-03-12 2002-09-19 Hitachi, Ltd. Process for producing semiconductor integrated circuit device
KR100650467B1 (ko) * 2001-03-12 2006-11-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치 및 그 제조 방법
KR100402389B1 (ko) * 2001-03-23 2003-10-17 삼성전자주식회사 금속 게이트 형성 방법
DE10120523A1 (de) 2001-04-26 2002-10-31 Infineon Technologies Ag Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
DE10236896B4 (de) * 2002-08-12 2010-08-12 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern
KR100459725B1 (ko) * 2002-09-19 2004-12-03 삼성전자주식회사 금속 게이트 패턴을 갖는 반도체소자의 제조방법
JP2005101141A (ja) * 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7981785B2 (en) * 2004-03-01 2011-07-19 Tokyo Electron Limited Method for manufacturing semiconductor device and plasma oxidation method
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP2007165788A (ja) * 2005-12-16 2007-06-28 Tokyo Electron Ltd 金属系膜の脱炭素処理方法、成膜方法および半導体装置の製造方法
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process

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US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3959025A (en) * 1974-05-01 1976-05-25 Rca Corporation Method of making an insulated gate field effect transistor
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
JPS5693314A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Ion injector

Also Published As

Publication number Publication date
JPH0458688B2 (https=) 1992-09-18
EP0116317A2 (en) 1984-08-22
EP0116317A3 (en) 1987-07-22
JPS59132136A (ja) 1984-07-30
US4505028A (en) 1985-03-19
EP0116317B1 (en) 1992-04-01
DE3485622D1 (de) 1992-05-07
KR840007307A (ko) 1984-12-06

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