KR910005473A - 바이폴라 리니어 ic의 제조방법 - Google Patents
바이폴라 리니어 ic의 제조방법 Download PDFInfo
- Publication number
- KR910005473A KR910005473A KR1019890012023A KR890012023A KR910005473A KR 910005473 A KR910005473 A KR 910005473A KR 1019890012023 A KR1019890012023 A KR 1019890012023A KR 890012023 A KR890012023 A KR 890012023A KR 910005473 A KR910005473 A KR 910005473A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- base
- bipolar linear
- base contact
- self
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제조공정을 나타낸 단면도.
Claims (2)
- 베이스 이온 주입후(PR1)을 제거하지 않고 이 PR(1) 위에 베이스 콘택트 PR(2)을 재코팅하여 베이스 콘택트의 한변을 베이스 확산층에 셀프 어라인시키므로 베이스콘택트(8) 형성시 오버랩 간격을 최소화시킬 수 있게 함을 특징으로 하는 바이폴라 리니어 IC의 제조방법.
- 제1항에 있어서, 셀프 어라인된 한변에 베이스와 불순물 형태가 같은 IR을 주입시키므로 베이스 콘택트(8) 형성시 오버에치에 의한 영향을 줄일 수 있게 함을 특징으로 하는 바이폴라 리니어 IC의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012023A KR0136911B1 (ko) | 1989-08-23 | 1989-08-23 | 바이폴라 리니어 ic의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012023A KR0136911B1 (ko) | 1989-08-23 | 1989-08-23 | 바이폴라 리니어 ic의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910005473A true KR910005473A (ko) | 1991-03-30 |
| KR0136911B1 KR0136911B1 (ko) | 1998-04-24 |
Family
ID=19289177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890012023A KR0136911B1 (ko) | 1989-08-23 | 1989-08-23 | 바이폴라 리니어 ic의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0136911B1 (ko) |
-
1989
- 1989-08-23 KR KR1019890012023A patent/KR0136911B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0136911B1 (ko) | 1998-04-24 |
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Payment date: 20041230 Year of fee payment: 8 |
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| LAPS | Lapse due to unpaid annual fee |