KR910005457A - Sog를 이용한 트렌치 벽면 도핑방법 - Google Patents
Sog를 이용한 트렌치 벽면 도핑방법 Download PDFInfo
- Publication number
- KR910005457A KR910005457A KR1019890012562A KR890012562A KR910005457A KR 910005457 A KR910005457 A KR 910005457A KR 1019890012562 A KR1019890012562 A KR 1019890012562A KR 890012562 A KR890012562 A KR 890012562A KR 910005457 A KR910005457 A KR 910005457A
- Authority
- KR
- South Korea
- Prior art keywords
- sog
- trench
- doping method
- trench wall
- wall doping
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 내지 제5도는 본발명의 공정도를 나타낸 것이다.
Claims (1)
- 도우핑된(인이나 비소, 보론)SOG(2)를 멀티코팅하여 균일하게 트렌치(1)에 채워넣고 800-1000℃사이에서 커링시켜 트렌치(1)부근에 균일한 확산영역(3)을 형성하므로 트렌치(1)내의 어느부분이나 균일하게 확산되게 한후 커리드 SOG를 습식식각으로 제거하여 커패시턴스(4)를 안정화시킬수 있게함을 특징으로 하는 SOG를 이용한 트렌치 벽멱 도핑방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012562A KR920007350B1 (ko) | 1989-08-31 | 1989-08-31 | Sog를 이용한 트렌치 벽면 도핑방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012562A KR920007350B1 (ko) | 1989-08-31 | 1989-08-31 | Sog를 이용한 트렌치 벽면 도핑방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910005457A true KR910005457A (ko) | 1991-03-30 |
| KR920007350B1 KR920007350B1 (ko) | 1992-08-31 |
Family
ID=19289495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890012562A KR920007350B1 (ko) | 1989-08-31 | 1989-08-31 | Sog를 이용한 트렌치 벽면 도핑방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR920007350B1 (ko) |
-
1989
- 1989-08-31 KR KR1019890012562A patent/KR920007350B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920007350B1 (ko) | 1992-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050718 Year of fee payment: 14 |
|
| LAPS | Lapse due to unpaid annual fee |