KR910003144A - 스퍼터 장치 - Google Patents
스퍼터 장치 Download PDFInfo
- Publication number
- KR910003144A KR910003144A KR1019900010984A KR900010984A KR910003144A KR 910003144 A KR910003144 A KR 910003144A KR 1019900010984 A KR1019900010984 A KR 1019900010984A KR 900010984 A KR900010984 A KR 900010984A KR 910003144 A KR910003144 A KR 910003144A
- Authority
- KR
- South Korea
- Prior art keywords
- discharge chamber
- sputtering
- curvature
- sputtering electrode
- sputtering apparatus
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예의 스퍼터 장치의 종단 정면도.
제2도는 스퍼터 장치의 횡단 정면도.
제3도는 본 발명의 제2의 실시예의 스퍼터장치의 종단 정면도.
Claims (6)
- 측면의 사방으로부터 중심으로 돌출한 곡률을 가진 방전실과, 방전실에 장착된 가스도입구 및 진공배기구와, 방전실의 측면의 곡률이 교차하는 곳의 사방에 설치되어서 방전실에 대해서 부의 전위가 인가된 원주음극과, 방전실의 곡률이 붙여진 측면의 바깥둘레에 인접하는 자극이 반대가 되도록 배열된 복수개의 영구 자석과, 방전실의 평행대향면의 안쪽에 배치된 스터퍼링 전극과, 스퍼터링 전극과 대향해서 배치된 기판재치대를 구비한 스퍼터 장치.
- 제1항에 있어서, 방전실의 바깥쪽의 기판재치대의 아래쪽에, 인접하는 자극이 반대로 되도록 배열된 복수개의 영구자석을 가진 스터링 장치.
- 제1항에 있어서, 스퍼터링 전극에 고주파를 인가하는 수단을 가진 스터링장치.
- 제1항에 있어서, 스퍼터링 전극에 방전실에 대해서 부의전위를 인가하는 수단을 가진 스터터 장치.
- 제1항에 있어서, 방전실내에 마이크로파를 방사하는 마이크로파 방사수단을 가진 스퍼터장치.
- 제5항에 있어서, 마이크로파 방사수단이, 방전실내에 돌출한 안테나인 스퍼터장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-187849 | 1989-07-20 | ||
JP1187849A JPH0814021B2 (ja) | 1989-07-20 | 1989-07-20 | スパッタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910003144A true KR910003144A (ko) | 1991-02-27 |
KR920004847B1 KR920004847B1 (ko) | 1992-06-19 |
Family
ID=16213295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900010984A KR920004847B1 (ko) | 1989-07-20 | 1990-07-19 | 스퍼터 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5006218A (ko) |
JP (1) | JPH0814021B2 (ko) |
KR (1) | KR920004847B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100717188B1 (ko) * | 2004-12-16 | 2007-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 금속막 스퍼터 장비 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH084708B2 (ja) * | 1989-11-08 | 1996-01-24 | 三井東圧化学株式会社 | 排ガス処理装置 |
US5316645A (en) * | 1990-08-07 | 1994-05-31 | Canon Kabushiki Kaisha | Plasma processing apparatus |
US5135554A (en) * | 1991-05-20 | 1992-08-04 | Hughes Aircraft Company | Method and apparatus for continuous sputter coating of fibers |
FR2689143B1 (fr) * | 1992-03-31 | 1994-05-13 | Commissariat A Energie Atomique | Dispositif de pulverisation cathodique utilisant un plasma engendre par des micro-ondes. |
US5374343A (en) * | 1992-05-15 | 1994-12-20 | Anelva Corporation | Magnetron cathode assembly |
US5290416A (en) * | 1992-07-10 | 1994-03-01 | Read-Rite Corporation | Unidirectional field generator |
US5630916A (en) | 1993-03-02 | 1997-05-20 | Cvc Products, Inc. | Magnetic orienting device for thin film deposition and method of use |
CH691643A5 (de) * | 1995-10-06 | 2001-08-31 | Unaxis Balzers Ag | Magnetronzerstäubungsquelle und deren Verwendung. |
US6042707A (en) * | 1998-05-22 | 2000-03-28 | Cvc Products, Inc. | Multiple-coil electromagnet for magnetically orienting thin films |
US6106682A (en) | 1998-05-22 | 2000-08-22 | Cvc Products, Inc. | Thin-film processing electromagnet for low-skew magnetic orientation |
DE19860474A1 (de) * | 1998-12-28 | 2000-07-06 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Beschichten von Substraten mittels bipolarer Puls-Magnetron-Zerstäubung |
US6579421B1 (en) | 1999-01-07 | 2003-06-17 | Applied Materials, Inc. | Transverse magnetic field for ionized sputter deposition |
US10047430B2 (en) | 1999-10-08 | 2018-08-14 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US8696875B2 (en) * | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US7504006B2 (en) * | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US20050071328A1 (en) | 2003-09-30 | 2005-03-31 | Lawrence Stephen R. | Personalization of web search |
EP1976346A1 (en) * | 2007-03-30 | 2008-10-01 | Ecole Polytechnique | Apparatus for generating a plasma |
US20110076420A1 (en) * | 2008-01-30 | 2011-03-31 | Applied Materials, Inc. | High efficiency low energy microwave ion/electron source |
US7993733B2 (en) | 2008-02-20 | 2011-08-09 | Applied Materials, Inc. | Index modified coating on polymer substrate |
US20090238998A1 (en) * | 2008-03-18 | 2009-09-24 | Applied Materials, Inc. | Coaxial microwave assisted deposition and etch systems |
US20090238993A1 (en) * | 2008-03-19 | 2009-09-24 | Applied Materials, Inc. | Surface preheating treatment of plastics substrate |
US8057649B2 (en) * | 2008-05-06 | 2011-11-15 | Applied Materials, Inc. | Microwave rotatable sputtering deposition |
US8349156B2 (en) * | 2008-05-14 | 2013-01-08 | Applied Materials, Inc. | Microwave-assisted rotatable PVD |
US20100078315A1 (en) * | 2008-09-26 | 2010-04-01 | Applied Materials, Inc. | Microstrip antenna assisted ipvd |
US20100078320A1 (en) * | 2008-09-26 | 2010-04-01 | Applied Materials, Inc. | Microwave plasma containment shield shaping |
TW201130007A (en) * | 2009-07-09 | 2011-09-01 | Applied Materials Inc | High efficiency low energy microwave ion/electron source |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
EP3443579B1 (en) * | 2016-05-02 | 2021-03-17 | MKS Instruments, Inc. | Cold cathode ionization vacuum gauge with multiple cathodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4038171A (en) * | 1976-03-31 | 1977-07-26 | Battelle Memorial Institute | Supported plasma sputtering apparatus for high deposition rate over large area |
US4627904A (en) * | 1984-05-17 | 1986-12-09 | Varian Associates, Inc. | Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias |
US4818359A (en) * | 1986-08-27 | 1989-04-04 | International Business Machines Corporation | Low contamination RF sputter deposition apparatus |
-
1989
- 1989-07-20 JP JP1187849A patent/JPH0814021B2/ja not_active Expired - Lifetime
-
1990
- 1990-07-16 US US07/556,002 patent/US5006218A/en not_active Expired - Fee Related
- 1990-07-19 KR KR1019900010984A patent/KR920004847B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100717188B1 (ko) * | 2004-12-16 | 2007-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 금속막 스퍼터 장비 |
Also Published As
Publication number | Publication date |
---|---|
JPH0814021B2 (ja) | 1996-02-14 |
US5006218A (en) | 1991-04-09 |
JPH0353065A (ja) | 1991-03-07 |
KR920004847B1 (ko) | 1992-06-19 |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010615 Year of fee payment: 10 |
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LAPS | Lapse due to unpaid annual fee |