KR900019223A - 전류 검출 기능 부착 트랜지스터 - Google Patents

전류 검출 기능 부착 트랜지스터 Download PDF

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Publication number
KR900019223A
KR900019223A KR1019900006971A KR900006971A KR900019223A KR 900019223 A KR900019223 A KR 900019223A KR 1019900006971 A KR1019900006971 A KR 1019900006971A KR 900006971 A KR900006971 A KR 900006971A KR 900019223 A KR900019223 A KR 900019223A
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KR
South Korea
Prior art keywords
resistor
transistor
resistance
temperature
current
Prior art date
Application number
KR1019900006971A
Other languages
English (en)
Other versions
KR930010102B1 (ko
Inventor
쇼고 모리
시노부 아오끼
하루오 다까기
Original Assignee
도요다 요시또시
가부시끼가이샤 도요다 지도쇽끼 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1121975A external-priority patent/JPH02301151A/ja
Priority claimed from JP1268720A external-priority patent/JP2917318B2/ja
Priority claimed from JP01280778A external-priority patent/JP3127444B2/ja
Application filed by 도요다 요시또시, 가부시끼가이샤 도요다 지도쇽끼 세이사꾸쇼 filed Critical 도요다 요시또시
Publication of KR900019223A publication Critical patent/KR900019223A/ko
Application granted granted Critical
Publication of KR930010102B1 publication Critical patent/KR930010102B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

전류 검출 기능 부착 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 전류 검출 기능 트랜지스터의 한 실시예에 있어서의 위면의 전극 패턴을 도시하는 평면도, 제2도는 동실시예의 트랜지스터를 모식적으로 도시하는 회로도, 제3도는 동실시예의 트랜지스터를 쓴 과전류 보호회로와 1예를 도시하는 블록도.

Claims (3)

  1. 주전류가 흐르는 전극배선의 일부분을 전류검출용의 저항으로서 사용하고, 상기 저항에 의한 전압 강하에 기준하여 상기 주전류의 크기를 검출하도록 한 것을 특징으로 하는 전류 검출 기능 부착 트랜지스터.
  2. 주전류와 센스 전류의 비가 온도 변화에 대하여 일정으로 되는 것에 적합한 온도 계수를 가진 저항과 그 저항에 직렬로 접속되는 부의 온도 특성을 가진 저항을 센스 트랜지스터의 에미터에 설치한 것을 특징으로 하는 전류 검출 기능 부착 트랜지스터.
  3. 센스 트랜지스터의 에미터에 정의 온도계수를 가지는 저항과 부의 온도계수를 가지는 저항을 직렬로 배설해서 내장하고, 양저항이 온도에 대하여 상보적으로 변화하여 합성 저항의 온도계수가 영이 되게 각각의 저항의 온도 계수와 저항값을 한정한 것을 특징으로 하는 전류 검출 기능 부착 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900006971A 1989-05-16 1990-05-16 전류 검출 기능 부착 트랜지스터 KR930010102B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1121975A JPH02301151A (ja) 1989-05-16 1989-05-16 電流検出機能付トランジスタ
JP121975 1989-05-16
JP268720 1989-10-16
JP1268720A JP2917318B2 (ja) 1989-10-16 1989-10-16 電流検出機能付トランジスタ
JP01280778A JP3127444B2 (ja) 1989-10-27 1989-10-27 電流検出機能付トランジスタ
JP280778 1989-10-27

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1019930013752A Division KR930010115B1 (ko) 1989-10-27 1993-07-21 전류 검출 기능 부착 트랜지스터
KR1019930013751A Division KR930010114B1 (ko) 1989-10-16 1993-07-21 전류 검출 기능 부착 트랜지스터

Publications (2)

Publication Number Publication Date
KR900019223A true KR900019223A (ko) 1990-12-24
KR930010102B1 KR930010102B1 (ko) 1993-10-14

Family

ID=27314359

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006971A KR930010102B1 (ko) 1989-05-16 1990-05-16 전류 검출 기능 부착 트랜지스터

Country Status (4)

Country Link
US (1) US5061863A (ko)
KR (1) KR930010102B1 (ko)
CA (1) CA2016918A1 (ko)
DE (1) DE4015625C2 (ko)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450772A (ja) * 1990-06-18 1992-02-19 Toyota Autom Loom Works Ltd 電流検出装置
JP2689708B2 (ja) * 1990-09-18 1997-12-10 日本モトローラ株式会社 バイアス電流制御回路
JPH04323863A (ja) * 1991-04-23 1992-11-13 Toyota Autom Loom Works Ltd 半導体装置
JPH05299431A (ja) * 1992-04-16 1993-11-12 Toyota Autom Loom Works Ltd 電流検出機能付トランジスタ
US5374857A (en) * 1992-05-29 1994-12-20 Sgs-Thomson Microelectronics, Inc. Circuit for providing drive current to a motor using a sensefet current sensing device and a fast amplifier
US5311084A (en) * 1992-06-23 1994-05-10 At&T Bell Laboratories Integrated circuit buffer with controlled rise/fall time
EP0580921B1 (en) * 1992-07-28 1998-10-07 STMicroelectronics S.r.l. Control of saturation of integrated bipolar transistors
US5406150A (en) * 1992-08-24 1995-04-11 Silicon Systems Inc Control system for motors and inductive loads
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置
US5272392A (en) * 1992-12-04 1993-12-21 North American Philips Corporation Current limited power semiconductor device
DE69413798T2 (de) * 1994-04-12 1999-04-22 St Microelectronics Srl Elektronische Leistungsvorrichtung mit drei Anschlüssen und isoliertem Gate mit einer Sättigungsausgangskennlinie veränderlicher Neigung in diskontinuierlicher Abhängigkeit vom Ausgangsstrom
EP0704889A3 (de) * 1994-09-29 1998-10-21 Siemens Aktiengesellschaft Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung
GB9423076D0 (en) * 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
WO1996014665A1 (en) * 1994-11-03 1996-05-17 Telefonaktiebolaget Lm Ericsson Ballast monitoring for radio frequency power transistors
EP0752593A3 (de) * 1995-07-07 1998-01-07 Siemens Aktiengesellschaft Verfahren zur Früherkennung von Ausfällen bei Leistungshalbleitermodulen
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
JP3627385B2 (ja) * 1996-06-28 2005-03-09 株式会社デンソー 電流検出機能を有する負荷電流供給回路
JPH10116917A (ja) * 1996-10-14 1998-05-06 Sharp Corp パワートランジスタ
DE19644193C2 (de) * 1996-10-24 2001-04-19 Bosch Gmbh Robert Integrierte Überlastschutzeinrichtung mit Temperatursensor
JP4220094B2 (ja) * 1999-04-05 2009-02-04 三菱電機株式会社 パワー半導体モジュール
DE10000500B4 (de) * 2000-01-08 2004-09-02 Robert Bosch Gmbh Vorrichtung zur Messung eines in einem Elektronikmodul fließenden Stroms
DE10057486A1 (de) * 2000-06-15 2016-10-13 Continental Teves Ag & Co. Ohg Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaftelementen und dessen/deren Verwendung in Kraftfahrzeugen, insbesondere Bremskraft- und Fahrdynamikreglern
JP4219567B2 (ja) 2001-04-03 2009-02-04 三菱電機株式会社 半導体装置
DE10154763A1 (de) * 2001-11-09 2003-05-22 Continental Teves Ag & Co Ohg Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern
GB2389472A (en) * 2002-06-07 2003-12-10 Sony Uk Ltd A transistor power amplifier in which the current drawn from the supply is monitored by sensing the voltage drop across an inductor in the supply line
DE202004008137U1 (de) * 2004-05-22 2005-09-29 Ellenberger & Poensgen Gmbh Elektronisches Relais
DE102004062357A1 (de) * 2004-12-14 2006-07-06 Atmel Germany Gmbh Versorgungsschaltung zur Erzeugung eines Referenzstroms mit vorgebbarer Temperaturabhängigkeit
JP4762663B2 (ja) * 2005-10-14 2011-08-31 三菱電機株式会社 半導体装置
ITVA20060001A1 (it) * 2006-01-04 2007-07-05 St Microelectronics Srl Metodo per generare un segnale rappresentativo della corrente erogata ad un carico da un dispositvo di potenza e relativo dispositivo di potenza
DE102008011603B4 (de) * 2008-02-28 2009-12-31 Semikron Elektronik Gmbh & Co. Kg Schaltung und Verfahren zur Signalspannungsübertragung innerhalb eines Treibers eines Leistungshalbleiterschalters
US9742373B2 (en) * 2011-10-31 2017-08-22 The Regents Of The University Of Michigan Method of manufacturing a temperature-compensated micromechanical resonator
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
DE102012018927B4 (de) * 2012-09-25 2021-05-27 Infineon Technologies Ag Blinkerschaltung zur Steuerung eines Blinkers in einem Fahrzeug
US9473132B2 (en) * 2013-11-25 2016-10-18 Flextronics Ap, Llc High speed sync FET control
DE102014202610A1 (de) * 2014-02-13 2015-08-13 Robert Bosch Gmbh Stromdetektionseinrichtung und Verfahren zum Erfassen eines elektrischen Stroms
DE102014202611A1 (de) * 2014-02-13 2015-08-13 Robert Bosch Gmbh Schaltungsanordnung und Verfahren zur Strommessung
US9152163B1 (en) * 2014-05-15 2015-10-06 Infineon Technologies Austria Ag Regulation of a load current-to-sensing current ratio in a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET)
US9768766B2 (en) 2014-07-14 2017-09-19 Infineon Technologies Austria Ag Electronic switching element and integrated sensor
JP6549451B2 (ja) * 2015-09-02 2019-07-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置および電子装置
US10637460B2 (en) 2016-06-14 2020-04-28 Macom Technology Solutions Holdings, Inc. Circuits and operating methods thereof for monitoring and protecting a device
US20180109228A1 (en) 2016-10-14 2018-04-19 MACOM Technology Solution Holdings, Inc. Phase shifters for gallium nitride amplifiers and related methods
US20190028066A1 (en) 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by field plate resistance thermometry
US20190028065A1 (en) 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by gate structure resistance thermometry
US20190078941A1 (en) * 2017-09-14 2019-03-14 Macom Technology Solutions Holdings, Inc. Operational temperature determination in bipolar transistors by resistance thermometry
CN112054706A (zh) * 2020-07-23 2020-12-08 华为技术有限公司 半导体功率模块及其电流检测方法、制造方法与汽车

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533845A (en) * 1984-02-22 1985-08-06 Motorola, Inc. Current limit technique for multiple-emitter vertical power transistor
US5029322A (en) * 1986-11-17 1991-07-02 Siemens Aktiengesellschaft Power MOSFET with current-monitoring
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
US4961006A (en) * 1989-06-22 1990-10-02 Motorola, Inc. Inductively loaded switching transistor circuit

Also Published As

Publication number Publication date
DE4015625A1 (de) 1990-11-22
KR930010102B1 (ko) 1993-10-14
DE4015625C2 (de) 1995-08-03
CA2016918A1 (en) 1990-11-16
US5061863A (en) 1991-10-29

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