ES443873A1 - Perfeccionamientos en dispositivos semiconductores. - Google Patents
Perfeccionamientos en dispositivos semiconductores.Info
- Publication number
- ES443873A1 ES443873A1 ES443873A ES443873A ES443873A1 ES 443873 A1 ES443873 A1 ES 443873A1 ES 443873 A ES443873 A ES 443873A ES 443873 A ES443873 A ES 443873A ES 443873 A1 ES443873 A1 ES 443873A1
- Authority
- ES
- Spain
- Prior art keywords
- piezoresistor
- effects
- resistance due
- resistor
- semiconductor resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/921—Radiation hardened semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/536,847 US3965453A (en) | 1974-12-27 | 1974-12-27 | Piezoresistor effects in semiconductor resistors |
Publications (1)
Publication Number | Publication Date |
---|---|
ES443873A1 true ES443873A1 (es) | 1977-05-16 |
Family
ID=24140168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES443873A Expired ES443873A1 (es) | 1974-12-27 | 1975-12-26 | Perfeccionamientos en dispositivos semiconductores. |
Country Status (11)
Country | Link |
---|---|
US (1) | US3965453A (es) |
JP (1) | JPS5190287A (es) |
BE (1) | BE837069A (es) |
CA (1) | CA1025562A (es) |
DE (1) | DE2558021A1 (es) |
ES (1) | ES443873A1 (es) |
FR (1) | FR2296268A1 (es) |
GB (1) | GB1514180A (es) |
IT (1) | IT1051976B (es) |
NL (1) | NL7515076A (es) |
SE (1) | SE411816B (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53127284A (en) * | 1977-04-13 | 1978-11-07 | Japan Radio Co Ltd | Semiconductor |
JPS53129987A (en) * | 1977-04-19 | 1978-11-13 | Japan Radio Co Ltd | Semiconductor |
GB2000638B (en) * | 1977-06-29 | 1982-01-20 | Tokyo Shibaura Electric Co | Semiconductor device |
US4236832A (en) * | 1977-06-29 | 1980-12-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Strain insensitive integrated circuit resistor pair |
US4268848A (en) * | 1979-05-07 | 1981-05-19 | Motorola, Inc. | Preferred device orientation on integrated circuits for better matching under mechanical stress |
JPS5688350A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Semiconductor device |
GB2139811B (en) * | 1983-05-10 | 1986-11-05 | Standard Telephones Cables Ltd | Switch device |
IN162554B (es) * | 1984-04-30 | 1988-06-11 | Rca Corp | |
JPS6156446A (ja) * | 1984-08-28 | 1986-03-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
US5889312A (en) * | 1993-07-02 | 1999-03-30 | Hitachi, Ltd. | Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same |
JP3571765B2 (ja) * | 1994-08-04 | 2004-09-29 | 三菱電機株式会社 | 半導体圧力検出装置 |
JP2800112B2 (ja) * | 1996-02-28 | 1998-09-21 | 株式会社エスアイアイ・アールディセンター | 半導体装置 |
US6831263B2 (en) | 2002-06-04 | 2004-12-14 | Intel Corporation | Very high speed photodetector system using a PIN photodiode array for position sensing |
US7312485B2 (en) * | 2000-11-29 | 2007-12-25 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
JP4710779B2 (ja) | 2006-09-28 | 2011-06-29 | 株式会社日立製作所 | 力学量計測装置 |
JP5904959B2 (ja) * | 2013-03-08 | 2016-04-20 | 日立オートモティブシステムズ株式会社 | 熱式空気流量計 |
US10352792B2 (en) * | 2017-02-15 | 2019-07-16 | Texas Instruments Incorporated | Device and method for on-chip mechanical stress sensing |
JP6662805B2 (ja) * | 2017-03-22 | 2020-03-11 | 日立オートモティブシステムズ株式会社 | 抵抗回路、発振回路および車載用センサ装置 |
US11189536B2 (en) * | 2018-12-31 | 2021-11-30 | Micron Technology, Inc. | Method and apparatus for on-chip stress detection |
US11536773B2 (en) | 2020-12-10 | 2022-12-27 | Texas Instruments Incorporated | Digital correction algorithms to improve battery voltage measurement accuracy |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3292128A (en) * | 1961-12-26 | 1966-12-13 | Gen Electric | Semiconductor strain sensitive devices |
US3277698A (en) * | 1963-11-15 | 1966-10-11 | Bell Telephone Labor Inc | Stress sensing semiconductive devices |
US3314035A (en) * | 1964-09-04 | 1967-04-11 | Electro Optical Systems Inc | Semiconductor potentiometer |
US3378648A (en) * | 1964-12-31 | 1968-04-16 | Gen Electric | Doped piezoresistive phonograph pickup |
US3456226A (en) * | 1967-10-27 | 1969-07-15 | Conrac Corp | Strain gage configuration |
JPS5624380B2 (es) * | 1973-07-13 | 1981-06-05 |
-
1974
- 1974-12-27 US US05/536,847 patent/US3965453A/en not_active Expired - Lifetime
-
1975
- 1975-09-30 CA CA236,765A patent/CA1025562A/en not_active Expired
- 1975-12-15 SE SE7514144A patent/SE411816B/xx unknown
- 1975-12-22 FR FR7539299A patent/FR2296268A1/fr active Granted
- 1975-12-22 GB GB52489/75A patent/GB1514180A/en not_active Expired
- 1975-12-22 DE DE19752558021 patent/DE2558021A1/de not_active Ceased
- 1975-12-24 NL NL7515076A patent/NL7515076A/xx not_active Application Discontinuation
- 1975-12-24 BE BE163105A patent/BE837069A/xx not_active IP Right Cessation
- 1975-12-24 IT IT30790/75A patent/IT1051976B/it active
- 1975-12-26 JP JP50155173A patent/JPS5190287A/ja active Pending
- 1975-12-26 ES ES443873A patent/ES443873A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE411816B (sv) | 1980-02-04 |
SE7514144L (sv) | 1976-06-28 |
US3965453A (en) | 1976-06-22 |
JPS5190287A (es) | 1976-08-07 |
FR2296268A1 (fr) | 1976-07-23 |
DE2558021A1 (de) | 1976-07-08 |
NL7515076A (nl) | 1976-06-29 |
FR2296268B1 (es) | 1979-05-04 |
GB1514180A (en) | 1978-06-14 |
CA1025562A (en) | 1978-01-31 |
BE837069A (fr) | 1976-04-16 |
IT1051976B (it) | 1981-05-20 |
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