KR900013663A - 조셉슨 접합 제조방법 - Google Patents

조셉슨 접합 제조방법 Download PDF

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Publication number
KR900013663A
KR900013663A KR1019900001230A KR900001230A KR900013663A KR 900013663 A KR900013663 A KR 900013663A KR 1019900001230 A KR1019900001230 A KR 1019900001230A KR 900001230 A KR900001230 A KR 900001230A KR 900013663 A KR900013663 A KR 900013663A
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KR
South Korea
Prior art keywords
thin film
micro
josephson junction
bridge
substrate
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Application number
KR1019900001230A
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English (en)
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KR930004635B1 (ko
Inventor
히데유끼 구로사와
도시오 히라이
히사노리 야마네
쯔또무 야마시따
Original Assignee
도시오 히라이
시바 고
히사노리 야마네
가부시끼가이샤 리켄
아까바네 노부히사
신 기쥬쯔 가이하쯔 지교단
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Application filed by 도시오 히라이, 시바 고, 히사노리 야마네, 가부시끼가이샤 리켄, 아까바네 노부히사, 신 기쥬쯔 가이하쯔 지교단 filed Critical 도시오 히라이
Publication of KR900013663A publication Critical patent/KR900013663A/ko
Application granted granted Critical
Publication of KR930004635B1 publication Critical patent/KR930004635B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching
    • Y10S505/817—Sputtering, including coating, forming, or etching forming josephson element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/819—Vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/82—And etching

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

조셉슨 접합 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제조 방법을 실행하기 위해 사용될 수 있는 장치를 설명한 단면도.
제2도는 본 발명에 따른 마이크로파 방사가 없는 조셉슨(Josepson)접합의 Ⅰ-Ⅴ특성도.
제3도는 본 발명에 따른 마이크로파 방사를 가진 조셉슨 접합의 Ⅰ-Ⅴ특성도.

Claims (6)

  1. 조셉슨 접합을 제조하는 방법에 있어서, 증기발생원으로서 작용하며, 적어도 이트륨, 바륨 및 동을 포함하는 원료를 사용하는 화학적 증기 침착에 의해 기판에 고 Tc초전도체 박막을 형성하는 단계 및, 조셉슨 접합을 생성하기 위해 마이크로-브리지로 상기 고 Tc초전도체 박막을 제조하는 단계를 포함하는 것을 특징으로 하는 조셉슨 접합 제조방법.
  2. 제1항에 있어서, 1 내지 10㎛의 폭을 가진 마이크로-브리지 패턴이 상기 박막에 형성되고, 상기 마이크로-브리지가 에칭에 의해 형성되는 것을 특징으로 하는 조셉슨 접합 제조방법.
  3. 제1항에 있어서, 상기 마이크로-브리지의 접합이 투명한 입자 경계를 제공하는 것을 특징으로 하는 조셉슨 접합 제조방법.
  4. 제1항에 있어서, 상기 기판은 상기 박막이 형성되었을 시에 감소된 압력 상태하에서 700 내지 850℃로 가열되는 것을 특징으로 하는 조셉슨 접합 제조방법.
  5. 제1항에 있어서, 상기 박막이 C-측 방위막을 포함하는 것을 특징으로 하는 조셉슨 접합 제조방법.
  6. 제1항에 있어서, 상기 기판이 MgO(100) 단일-결정기판이며, 상기 박막이 0.5 내지 1㎛의 두께를 가지며, 상기 마이크로-브리지의 접합이 1㎛의 길이와 1㎛의 폭을 갖는 것을 특징으로 하는 조셉슨 접합 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001230A 1989-02-04 1990-02-02 조셉슨 접합소자 제조방법 KR930004635B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP89-24773 1989-02-04
JP2477389 1989-02-04
JP1-24773 1989-02-04
JP89-225322 1989-08-31
JP1225322A JPH031584A (ja) 1989-02-04 1989-08-31 ジョセフソン接合素子の製造方法
JP225322 1989-08-31

Publications (2)

Publication Number Publication Date
KR900013663A true KR900013663A (ko) 1990-09-06
KR930004635B1 KR930004635B1 (ko) 1993-06-02

Family

ID=26362351

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001230A KR930004635B1 (ko) 1989-02-04 1990-02-02 조셉슨 접합소자 제조방법

Country Status (5)

Country Link
US (1) US4985117A (ko)
EP (1) EP0382609B1 (ko)
JP (1) JPH031584A (ko)
KR (1) KR930004635B1 (ko)
DE (1) DE69011546T2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508060A3 (en) * 1991-02-12 1993-01-13 Ngk Spark Plug Co. Ltd. Method of forming oxide superconducting films and oxide superconducting members having said films
US5196395A (en) * 1991-03-04 1993-03-23 Superconductor Technologies, Inc. Method for producing crystallographic boundary junctions in oxide superconducting thin films
US5376624A (en) * 1991-10-10 1994-12-27 The United States Of America As Represented By The Secretary Of The Navy Josephson break junction thin film device
US5411937A (en) * 1993-05-17 1995-05-02 Sandia Corporation Josephson junction
US5458086A (en) * 1993-10-13 1995-10-17 Superconductor Technologies, Inc. Apparatus for growing metal oxides using organometallic vapor phase epitaxy
EP0823734A1 (en) 1996-07-23 1998-02-11 DORNIER GmbH Josephson junction array device, and manufacture thereof
DE19629583C2 (de) * 1996-07-23 2001-04-19 Oxxel Oxide Electronics Techno Emitter- und/oder Detektorbauelement für Submillimeterwellen-Strahlung mit einer Vielzahl von Josephson-Kontakten, Verfahren zu seiner Herstellung und Verwendungen des Bauelements
WO1998022985A2 (en) * 1996-11-18 1998-05-28 Nkt Research Center A/S Superconductive josephson junction, method of its preparation, and its use in squids
DE19840071A1 (de) * 1998-09-03 2000-03-23 Forschungszentrum Juelich Gmbh Shapiro-Stufen-SQUID
US20050062131A1 (en) * 2003-09-24 2005-03-24 Murduck James Matthew A1/A1Ox/A1 resistor process for integrated circuits
KR101890667B1 (ko) * 2009-10-02 2018-09-28 엠바츄어 인크. 극저 저항 필름 및 이를 개질 또는 생성하는 방법
US9356219B2 (en) * 2009-10-02 2016-05-31 Ambature, Inc. High temperature superconducting materials and methods for modifying and creating same
CN109362239B (zh) 2016-03-23 2022-10-21 南非大学 基于飞秒激光的超导薄膜上制备微纳米收缩结构的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246081B1 (ko) * 1973-08-28 1978-11-10 Commissariat Energie Atomique
US4861750A (en) * 1987-04-20 1989-08-29 Nissin Electric Co., Ltd. Process for producing superconducting thin film
JPS6415988A (en) * 1987-07-10 1989-01-19 Nippon Telegraph & Telephone Superconducting device
US4912087A (en) * 1988-04-15 1990-03-27 Ford Motor Company Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates

Also Published As

Publication number Publication date
EP0382609B1 (en) 1994-08-17
JPH031584A (ja) 1991-01-08
US4985117A (en) 1991-01-15
DE69011546T2 (de) 1995-01-12
KR930004635B1 (ko) 1993-06-02
EP0382609A2 (en) 1990-08-16
DE69011546D1 (de) 1994-09-22
EP0382609A3 (en) 1990-09-26

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