JPS57111068A - Super schottky diode and manufacture thereof - Google Patents

Super schottky diode and manufacture thereof

Info

Publication number
JPS57111068A
JPS57111068A JP55186682A JP18668280A JPS57111068A JP S57111068 A JPS57111068 A JP S57111068A JP 55186682 A JP55186682 A JP 55186682A JP 18668280 A JP18668280 A JP 18668280A JP S57111068 A JPS57111068 A JP S57111068A
Authority
JP
Japan
Prior art keywords
insulator layer
metal
super
schottky diode
wave length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55186682A
Other languages
Japanese (ja)
Other versions
JPH0142148B2 (en
Inventor
Yoshikazu Takano
Yoshinobu Sugiyama
Terue Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55186682A priority Critical patent/JPS57111068A/en
Publication of JPS57111068A publication Critical patent/JPS57111068A/en
Publication of JPH0142148B2 publication Critical patent/JPH0142148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To obtain a high speed electromagnetic wave detector having high sensitivity extending from micro wave length up to far-infrared wave length band by a method wherein a superconductive substance and a normally conductive metal are arranged in plural very small unit holes obtained by processing an insulator layer provided on a semiconductor bulk crystal. CONSTITUTION:Dug holes are provided at the desired parts of the insulator layer 2 on a semiconductor bulk crystal 1. A superconductor metal 3 and a normal conductor metal 4 are evaporated in succession in a high vacuum in the very small unit holes thereof. The unnecessary metal on the insulator layer is removed by an organic solvent. Fundamental structures thereof are arranged on the same substrate as to make the centers thereof to be positioned at the tops of regular triangles mutually. Accordingly the super Schottky diode with the very small junction faces having favorable high frequency characteristic can be formed.
JP55186682A 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof Granted JPS57111068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55186682A JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55186682A JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57111068A true JPS57111068A (en) 1982-07-10
JPH0142148B2 JPH0142148B2 (en) 1989-09-11

Family

ID=16192789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55186682A Granted JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57111068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195437A (en) * 1987-10-07 1989-04-13 Canon Inc Electron emission element
EP1621293A2 (en) 2004-07-29 2006-02-01 Makita Corporation Power tool
US20190341829A1 (en) * 2015-07-24 2019-11-07 Moteurs Leroy-Somer Electrical rotating machine with improved cooling

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195437A (en) * 1987-10-07 1989-04-13 Canon Inc Electron emission element
EP1621293A2 (en) 2004-07-29 2006-02-01 Makita Corporation Power tool
US20190341829A1 (en) * 2015-07-24 2019-11-07 Moteurs Leroy-Somer Electrical rotating machine with improved cooling

Also Published As

Publication number Publication date
JPH0142148B2 (en) 1989-09-11

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