KR900012332A - 웨이퍼 세척 처리 방법 및 장치 - Google Patents

웨이퍼 세척 처리 방법 및 장치

Info

Publication number
KR900012332A
KR900012332A KR1019900000116A KR900000116A KR900012332A KR 900012332 A KR900012332 A KR 900012332A KR 1019900000116 A KR1019900000116 A KR 1019900000116A KR 900000116 A KR900000116 A KR 900000116A KR 900012332 A KR900012332 A KR 900012332A
Authority
KR
South Korea
Prior art keywords
processing method
wafer cleaning
cleaning processing
wafer
processing
Prior art date
Application number
KR1019900000116A
Other languages
English (en)
Other versions
KR930001287B1 (ko
Inventor
마사또 다나까
Original Assignee
다이니쁜 스크린 세이조 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이니쁜 스크린 세이조 가부시끼 가이샤 filed Critical 다이니쁜 스크린 세이조 가부시끼 가이샤
Publication of KR900012332A publication Critical patent/KR900012332A/ko
Application granted granted Critical
Publication of KR930001287B1 publication Critical patent/KR930001287B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1019900000116A 1989-01-11 1990-01-08 웨이퍼 세척 처리 방법 및 장치 KR930001287B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP509689 1989-01-11
JP89-5096 1989-01-11
JP1120172A JPH02275631A (ja) 1989-01-11 1989-05-12 基板の洗浄処理方法及びその装置
JP89-120172 1989-05-12

Publications (2)

Publication Number Publication Date
KR900012332A true KR900012332A (ko) 1990-08-03
KR930001287B1 KR930001287B1 (ko) 1993-02-25

Family

ID=11601851

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000116A KR930001287B1 (ko) 1989-01-11 1990-01-08 웨이퍼 세척 처리 방법 및 장치

Country Status (2)

Country Link
JP (1) JPH02275631A (ko)
KR (1) KR930001287B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04131486U (ja) * 1991-05-20 1992-12-03 エスアンドシー株式会社 超音波洗浄、バリ取り装置に於けるリンス水の処理 手段
US7547669B2 (en) 1998-07-06 2009-06-16 Ekc Technology, Inc. Remover compositions for dual damascene system
US7135445B2 (en) 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
CN102709174A (zh) * 2012-06-01 2012-10-03 吉林华微电子股份有限公司 先行氩离子注入损伤氧化层控制腐蚀角度的方法
JP6405618B2 (ja) * 2013-11-12 2018-10-17 株式会社Sumco シリコンウェーハの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320376A (en) * 1976-08-10 1978-02-24 Agency Of Ind Science & Technol Large dose radiation measuring system of wide dose region
JPS54125981A (en) * 1978-03-23 1979-09-29 Nec Corp Semiconductor washing device
JPS5821825A (ja) * 1981-08-03 1983-02-08 Toshiba Corp フォトレジスト現像液及びその製造方法
JPS63254734A (ja) * 1987-04-13 1988-10-21 Oki Electric Ind Co Ltd 半導体ウエハの処理方法とその装置

Also Published As

Publication number Publication date
KR930001287B1 (ko) 1993-02-25
JPH02275631A (ja) 1990-11-09

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Legal Events

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A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19980217

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee