KR900007088A - 전기장치의 형성방법 - Google Patents
전기장치의 형성방법 Download PDFInfo
- Publication number
- KR900007088A KR900007088A KR1019890014618A KR890014618A KR900007088A KR 900007088 A KR900007088 A KR 900007088A KR 1019890014618 A KR1019890014618 A KR 1019890014618A KR 890014618 A KR890014618 A KR 890014618A KR 900007088 A KR900007088 A KR 900007088A
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- gas
- electrical
- vacuum chamber
- electrical device
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- 238000000034 method Methods 0.000 title claims 10
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 8
- 238000004380 ashing Methods 0.000 claims 4
- 238000007789 sealing Methods 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 2
- 239000012778 molding material Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실행시 사용하기 위한 플라즈마 CVD 장치를 나타내는 개략적인 다이어그램.
제3(A)도는 12개의 IC장치를 지지하기 위한 리드 프레임 구조를 나타내는 개략적인 평면도.
제3(B)도는 제3(A)도에서 설명된 12단위 리드 프레임중 한 단위를 나타내는 확대도.
제5(A)도 내지 제5(C)도는 본 발명에 따른 IC장치에서 Si,N,C 및 O의 심도 곡선을 나타내는 그래프.
Claims (7)
- 몰딩재로서 밀봉된 전기장치의 형성 방법으로서, 상기 방법은: 유기 도전성 페이스트에 의해 리드 프레임 상에 전기장치를 설치하고; 상기 전기장치와 상기 리드 프레임사이에 전기 연결부를 형성하고; 진공 챔버내에 상기 장치를 수반하는 상기 리드 프레임을 배치하고, 상기 유기 도전성 페이스트의 증발 가스를 제거하기 위해 10-2토르보다 작은 압력으로 상기 진공 챔버를 진공상태로 하고; 상기 전기장치를 밀봉시키는 단계로 구성되는 것을 특징으로 하는 전기장치의 형성방법.
- 제1항에 있어서, 진공화 단계후 그리고 밀봉단계전에 보호 필름을 용착시키는 단계를 포함하는 것을 특징으로 하는 전기장치의 형성방법.
- 제1항에 있어서, 상기 전기장치는 밀봉 단계에 앞서 5분 이상 10-2토르 이하의 상기 압력에서 보존되는 것을 특징으로 하는 전기장치의 형성방법.
- 몰딩재로서 전기장치의 형성방법으로서, 상기 방법은; 유기 도전성 페이스트에 의해 리드 프레임상에 전기 장치를 설치하고; 상기 전기장치와 상기 리드 프레임 사이에 전기 연결부를 형성하고; 진공 쳄버에 상기 장치를 수반하는 상기 리드 프레임을 배치시키고; 회분화제 가스를 주입시키고; 상기 진공쳄버로 전기 에너지를 입력시키고 플라즈마 회분화를 수행하기 위해 플라즈마로 상기 회분화제 가스를 전환시키고 상기 진공쳄버로부터 상기 전기장치를 제거하고; 상기 전기장치를 밀봉시키는 단계로 구성되는 것을 특징으로 하는 전기장치의 형성방법.
- 제4항에 있어서, 상기 회분화제 가스는 산화가스인 것을 특징으로 하는 전기장치의 형성방법.
- 제5항에 있어서, 상기 회분화제 가스는 산소 또는 N2O로 구성되는 것을 특징으로 하는 전기장치의 형성방법.
- 제4항에 있어서, 상기 쳄버로 세척가스를 주입시키고 상기 장치에 대해 플라즈마 세척을 수행하기 위해 상기 환원가스로 에너지를 입력시키는 단계를 포함하는 것을 특징으로 하는 전기장치의 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63256701A JP2681167B2 (ja) | 1988-10-12 | 1988-10-12 | 電子装置作製方法 |
JP63256702A JPH02102564A (ja) | 1988-10-12 | 1988-10-12 | 電子装置およびその作製方法 |
JP63-256701 | 1988-10-12 | ||
JP63-256702 | 1988-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900007088A true KR900007088A (ko) | 1990-05-09 |
KR930007519B1 KR930007519B1 (ko) | 1993-08-12 |
Family
ID=26542849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890014618A KR930007519B1 (ko) | 1988-10-12 | 1989-10-12 | 전기장치의 패키지(package) 방법 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0363936B1 (ko) |
KR (1) | KR930007519B1 (ko) |
CN (1) | CN1023165C (ko) |
DE (1) | DE68926086T2 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY165522A (en) * | 2011-01-06 | 2018-04-02 | Carsem M Sdn Bhd | Leadframe packagewith die mounted on pedetal that isolates leads |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57111034A (en) * | 1980-12-10 | 1982-07-10 | Hitachi Ltd | Semiconductor device and its manufacture |
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1989
- 1989-10-11 EP EP89118909A patent/EP0363936B1/en not_active Expired - Lifetime
- 1989-10-11 DE DE68926086T patent/DE68926086T2/de not_active Expired - Fee Related
- 1989-10-12 CN CN89108372A patent/CN1023165C/zh not_active Expired - Fee Related
- 1989-10-12 KR KR1019890014618A patent/KR930007519B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930007519B1 (ko) | 1993-08-12 |
EP0363936A3 (en) | 1990-09-19 |
EP0363936B1 (en) | 1996-03-27 |
DE68926086D1 (de) | 1996-05-02 |
CN1041849A (zh) | 1990-05-02 |
CN1023165C (zh) | 1993-12-15 |
EP0363936A2 (en) | 1990-04-18 |
DE68926086T2 (de) | 1996-08-14 |
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