GB1485063A - Etching of silicon devices - Google Patents

Etching of silicon devices

Info

Publication number
GB1485063A
GB1485063A GB471175A GB471175A GB1485063A GB 1485063 A GB1485063 A GB 1485063A GB 471175 A GB471175 A GB 471175A GB 471175 A GB471175 A GB 471175A GB 1485063 A GB1485063 A GB 1485063A
Authority
GB
United Kingdom
Prior art keywords
jar
etching
pressure
torr
evacuated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB471175A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB471175A priority Critical patent/GB1485063A/en
Publication of GB1485063A publication Critical patent/GB1485063A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

1485063 Etching STANDARD TELEPHONES & CABLES Ltd 4 Feb 1975 4711/75 Heading B6J [Also in Division B3] A method of plasma etching a silicon semiconductor device includes subjecting its surface to a glow discharge in an atmosphere of sulphur hexafluoride at a pressure of 0À1 torr. A device, particularly a non-planar one with its P-N junctions emerging at the edge of a step, rests on a highly conductive metal suspector in a bell jar which is seated on an earthed mounting plate so as to provide a gas tight seal. The jar is evacuated and the sulphur hexafluoride admitted to maintain a pressure of 0À1 torr. A glow discharge is maintained for five to ten minutes by an R.F. generator connected to a copper electrode around the jar. When etching is complete, the jar is evacuated and then filled with an inert gas to atmospheric pressure.
GB471175A 1975-02-04 1975-02-04 Etching of silicon devices Expired GB1485063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB471175A GB1485063A (en) 1975-02-04 1975-02-04 Etching of silicon devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB471175A GB1485063A (en) 1975-02-04 1975-02-04 Etching of silicon devices

Publications (1)

Publication Number Publication Date
GB1485063A true GB1485063A (en) 1977-09-08

Family

ID=9782357

Family Applications (1)

Application Number Title Priority Date Filing Date
GB471175A Expired GB1485063A (en) 1975-02-04 1975-02-04 Etching of silicon devices

Country Status (1)

Country Link
GB (1) GB1485063A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
US4680087A (en) * 1986-01-17 1987-07-14 Allied Corporation Etching of dielectric layers with electrons in the presence of sulfur hexafluoride
GB2202236A (en) * 1987-03-09 1988-09-21 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
US4680087A (en) * 1986-01-17 1987-07-14 Allied Corporation Etching of dielectric layers with electrons in the presence of sulfur hexafluoride
GB2202236A (en) * 1987-03-09 1988-09-21 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition
GB2202236B (en) * 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19950203