KR900004197B1 - 교류고체 릴레이회로 및 다이리스터 구조 - Google Patents

교류고체 릴레이회로 및 다이리스터 구조 Download PDF

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Publication number
KR900004197B1
KR900004197B1 KR1019830006040A KR830006040A KR900004197B1 KR 900004197 B1 KR900004197 B1 KR 900004197B1 KR 1019830006040 A KR1019830006040 A KR 1019830006040A KR 830006040 A KR830006040 A KR 830006040A KR 900004197 B1 KR900004197 B1 KR 900004197B1
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South Korea
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anode
region
conductivity type
substrate
base
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Expired
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KR1019830006040A
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English (en)
Korean (ko)
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KR840007203A (ko
Inventor
헤르만 토마스
윌리암즈 올리버
Original Assignee
인터내쇼날 렉티파이어 코오퍼레이션
제랄드 에이.코리스
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Priority claimed from US06/451,792 external-priority patent/US4535251A/en
Application filed by 인터내쇼날 렉티파이어 코오퍼레이션, 제랄드 에이.코리스 filed Critical 인터내쇼날 렉티파이어 코오퍼레이션
Publication of KR840007203A publication Critical patent/KR840007203A/ko
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Publication of KR900004197B1 publication Critical patent/KR900004197B1/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Electronic Switches (AREA)
  • Facsimile Heads (AREA)
  • Thyristors (AREA)
  • Facsimile Scanning Arrangements (AREA)
KR1019830006040A 1982-12-21 1983-12-20 교류고체 릴레이회로 및 다이리스터 구조 Expired KR900004197B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/451,792 US4535251A (en) 1982-12-21 1982-12-21 A.C. Solid state relay circuit and structure
US55502583A 1983-11-25 1983-11-25
US555025 1983-11-25
US451792 1999-12-01

Publications (2)

Publication Number Publication Date
KR840007203A KR840007203A (ko) 1984-12-05
KR900004197B1 true KR900004197B1 (ko) 1990-06-18

Family

ID=27036523

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830006040A Expired KR900004197B1 (ko) 1982-12-21 1983-12-20 교류고체 릴레이회로 및 다이리스터 구조

Country Status (12)

Country Link
KR (1) KR900004197B1 (enExample)
BR (1) BR8307043A (enExample)
CA (1) CA1237170A (enExample)
CH (1) CH664861A5 (enExample)
DE (1) DE3345449A1 (enExample)
FR (1) FR2538170B1 (enExample)
GB (2) GB2133641B (enExample)
IL (1) IL70462A (enExample)
IT (1) IT1194526B (enExample)
MX (2) MX155562A (enExample)
NL (1) NL8304376A (enExample)
SE (1) SE8306952L (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
GB2234642A (en) * 1989-07-19 1991-02-06 Philips Nv Protection for a switched bridge circuit
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
GB2254730B (en) * 1991-04-08 1994-09-21 Champion Spark Plug Europ High current photosensitive electronic switch
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
US6518604B1 (en) * 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
EP3249815B1 (en) * 2016-05-23 2019-08-28 NXP USA, Inc. Circuit arrangement for fast turn-off of bi-directional switching device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416839B2 (enExample) * 1973-03-06 1979-06-25
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2932969A1 (de) * 1979-04-20 1980-10-30 Ske Halbleiter-relaiskreis und verfahren zu seiner herstellung
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3019907A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer zweirichtungsthyristor
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller

Also Published As

Publication number Publication date
FR2538170A1 (fr) 1984-06-22
KR840007203A (ko) 1984-12-05
DE3345449A1 (de) 1984-07-12
CA1237170A (en) 1988-05-24
SE8306952D0 (sv) 1983-12-15
GB2133641B (en) 1986-10-22
IT8324285A0 (it) 1983-12-20
NL8304376A (nl) 1984-07-16
GB2133641A (en) 1984-07-25
GB2174242B (en) 1987-06-10
BR8307043A (pt) 1984-07-31
GB2174242A (en) 1986-10-29
IT8324285A1 (it) 1985-06-20
MX155562A (es) 1988-03-25
CH664861A5 (de) 1988-03-31
SE8306952L (sv) 1984-06-22
FR2538170B1 (fr) 1988-05-27
IL70462A (en) 1987-09-16
IL70462A0 (en) 1984-03-30
GB8333998D0 (en) 1984-02-01
GB8604263D0 (en) 1986-03-26
DE3345449C2 (enExample) 1989-08-17
IT1194526B (it) 1988-09-22
MX160049A (es) 1989-11-13

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