KR900003838B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR900003838B1
KR900003838B1 KR1019870002956A KR870002956A KR900003838B1 KR 900003838 B1 KR900003838 B1 KR 900003838B1 KR 1019870002956 A KR1019870002956 A KR 1019870002956A KR 870002956 A KR870002956 A KR 870002956A KR 900003838 B1 KR900003838 B1 KR 900003838B1
Authority
KR
South Korea
Prior art keywords
emitter
region
resistance
base
power transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870002956A
Other languages
English (en)
Korean (ko)
Other versions
KR870009489A (ko
Inventor
타카오 에모토
다케오 시오미
마사유키 사이토
히로시 오다이라
오사무 타키가와
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR870009489A publication Critical patent/KR870009489A/ko
Application granted granted Critical
Publication of KR900003838B1 publication Critical patent/KR900003838B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019870002956A 1986-03-31 1987-03-30 반도체 장치 Expired KR900003838B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP70966 1986-03-31
JP61-70966 1986-03-31
JP61070966A JPS62229975A (ja) 1986-03-31 1986-03-31 電力用トランジスタ

Publications (2)

Publication Number Publication Date
KR870009489A KR870009489A (ko) 1987-10-27
KR900003838B1 true KR900003838B1 (ko) 1990-06-02

Family

ID=13446770

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002956A Expired KR900003838B1 (ko) 1986-03-31 1987-03-30 반도체 장치

Country Status (4)

Country Link
EP (1) EP0239960B1 (enExample)
JP (1) JPS62229975A (enExample)
KR (1) KR900003838B1 (enExample)
DE (1) DE3789913T2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
EP0592157B1 (en) * 1992-10-08 1998-11-25 STMicroelectronics, Inc. Integrated thin film approach to achieve high ballast levels for overlay structures
SE521385C2 (sv) * 1997-04-04 2003-10-28 Ericsson Telefon Ab L M Bipolär transistorstruktur
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (enExample) * 1962-10-04
JPS54124258A (en) * 1978-03-20 1979-09-27 Hitachi Ltd Method of producing thick film hybrid integrated circuit
JPS58132969A (ja) * 1982-02-01 1983-08-08 Mitsubishi Electric Corp 半導体装置
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
EP0150579B1 (en) * 1984-01-27 1987-09-16 Kabushiki Kaisha Toshiba Thermal head
JPS6110892A (ja) * 1984-06-26 1986-01-18 株式会社東芝 発熱体

Also Published As

Publication number Publication date
EP0239960A2 (en) 1987-10-07
EP0239960A3 (en) 1990-04-25
DE3789913D1 (de) 1994-07-07
JPS62229975A (ja) 1987-10-08
EP0239960B1 (en) 1994-06-01
KR870009489A (ko) 1987-10-27
JPH0511418B2 (enExample) 1993-02-15
DE3789913T2 (de) 1994-11-03

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